Si PIN photodiodes S10783 S10784 High-speed detectors with plastic package The S10783 and S10784 are high-speed APC (auto power control) detectors developed for monitoring laser diodes with a peak wavelength of 660 nm or 780 nm. The S10783 is designed for surface mount and the S10784 is a plastic package with φ3 mm lens. Features Applications High-speed response 300 MHz typ. (λ=650 nm, VR=2.5 V) 250 MHz typ. (λ=780 nm, VR=2.5 V) Laser diode monitors of optical disk unit (high-speed APC) Sensors for red laser diode High sensitivity S10783: 0.46 A/W typ. (λ=650 nm) S10784: 0.45 A/W typ. (λ=650 nm) Structure Parameter Photosensitive area size Effective photosensitive area Package Symbol - S10783 φ0.8 0.5 Surface mount type plastic S10784 φ3.0 7.0 Plastic with lens Unit mm mm2 - S10784 Unit V mW °C °C Absolute maximum ratings Parameter Reverse voltage Power dissipation Operating temperature Storage temperature Symbol VR max P Topr Tstg S10783 20 50 -25 to +85 -40 to +100 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. This product does not support lead-free soldering. For details on reflow soldering conditions for surface-mount conponents, please contact our sales office. www.hamamatsu.com 1 Si PIN photodiodes S10783, S10784 Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Spectral response range Peak sensitivity wavelength λ λp Photosensitivity S Dark current Temperature coefficient of ID ID TCID Cutoff frequency fc Terminal capacitance Noise equivalent power Ct NEP Condition λ=660 nm λ=780 nm VR=2.5 V VR=2.5 V λ=660 nm RL=50 Ω λ=780 nm VR=2.5 V, f=1 MHz VR=2.5 V Min. 0.41 0.47 150 125 - Spectral response S10783 Typ. Max. 330 to 1040 760 0.46 0.52 0.01 1.0 1.15 300 250 4.5 9 3.5 × 10-15 - Min. 0.40 0.46 150 125 - S10784 Typ. Max. 340 to 1040 760 0.45 0.51 0.01 1.0 1.15 300 250 4.5 9 3.5 × 10-15 - Unit nm nm A/W nA times/°C MHz pF W/Hz1/2 Linearity (Typ. Ta=25 °C) 0.6 (Typ. Ta=25 °C, VR=0 V, 2856 K) 1 mA S10783 100 μA 10 μA Short circuit current Photosensitivity (A/W) 0.5 0.4 S10784 0.3 0.2 1 μA S10784 100 nA 10 nA S10783 1 nA 0.1 100 pA 0 200 400 600 800 1000 1200 Wavelength (nm) 10 pA 0.01 0.1 1 10 100 1000 10000 Illuminance (lx) KPINB0355EA KPINB0396EA 2 Si PIN photodiodes S10783, S10784 Dark current vs. reverse voltage Photosensitivity temperature characteristics (Typ. Ta=25 °C) Dark current 100 pA 10 pA 1 pA 100 fA 0.01 0.1 1 10 (Typ.) +1.0 Temperature coefficient (%/°C) 1 nA +0.5 0 -0.5 400 100 Reverse voltage (V) 500 600 700 800 900 1100 Wavelength (nm) KPINB0356EA KPINB0357EA Dark current vs. ambient temperature Terminal capacitance vs. reverse voltage (Typ. VR=2.5 V) 10-7 1000 (Typ. Ta=25 °C, f=1 MHz) 10 pF 10-8 Terminal capacitance Dark current (A) 10-9 -10 10 -11 10 10-12 10-13 10-14 10 -15 10-16 -20 -10 0 10 20 30 40 50 60 70 80 Ambient temperature (°C) 1 pF 0.1 1 10 100 Reverse voltage (V) KPINB0363EA KPINB0358EA 3 Si PIN photodiodes S10783, S10784 Directivity S10784 S10783 20° 30° 10° 0° 10° (Typ. Ta=25 °C) 20° 30° 20° 100% 10° 0° 10° (Typ. Ta=25 °C) 20° 100% 30° 80% 30° 80% 40° 40° 40° 40° 60% 60% 50° 50° 50° 50° 40% 60° 40% 60° 60° 60° 70° 70° 20% 70° 70° 20% 80° 80° 80° 80° 90° 90° 90° 90° Relative sensitivity Relative sensitivity KPINB0359EA KPINB0362EA Frequency characteristics λ=780 nm λ=660 nm (Typ. Ta=25 °C, VR=2.5 V, RL=50 Ω) +5 Relative output (dB) Relative output (dB) +5 0 -3 -5 -10 100 kHz 1 MHz 10 MHz 100 MHz 1 GHz Frequency (Typ. Ta=25 °C, VR=2.5 V, RL=50 Ω) 0 -3 -5 -10 100 kHz 1 MHz 10 MHz 100 MHz 1 GHz Frequency KPINB0360EA KPINB0361EA 4 Si PIN photodiodes S10783, S10784 Dimensional outlines (unit: mm) S10783 Photosensitive area ( 0.8) 4.8* 5° 1.5 ± 0.4 4.0* 10° 1.5 ± 0.4 4.7* 2.54 5.0 ± 0.2 (Including burr) 0.6 4.1 ± 0.2 (Including burr) 0.4 0.8 1.8 7.0 ± 0.3 0.7 ± 0.3 Photosensitive surface 0.7 ± 0.3 0.25 10° Tolerance unless otherwise noted: ±0.1 Position accuracy of photosensitive area center with respect to the package dimensions marked * X, Y≤±0.2 θ≤±2° Lead surface finish: silver plating Standard packing: stick (50 pcs/stick) 0.1 ± 0.1 5° NC Cathode Anode Cathode KPINA0105EB S10784 6° 8° 4.0 ± 0.2 4.2 max. (Including burr) Center of lens 0.7 Lens 3.0 (0.8) 0.45 2.54 6° 4.8* .5 R1 8° 1.2 9.2 ± 1.0 (1.3) 2.9 5.2 max. (Including burr) 1.9 3.8* 2.2 ± 0.15 0.45 Tolerance unless otherwise noted: ±0.1 Position accuracy of photosensitive area center with respect to the package dimensions marked * X, Y≤±0.2 θ≤±2° Lead surface finish: silver plating Standard packing: polyethylene pack [anti-static type] (500 pcs/pack) KPINA0032EC 5 Si PIN photodiodes S10783, S10784 Information described in this material is current as of May, 2013. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KPIN1079E03 May 2013 DN 6