s10783 s10784 kpin1079e

Si PIN photodiodes
S10783
S10784
High-speed detectors with plastic package
The S10783 and S10784 are high-speed APC (auto power control) detectors developed for monitoring laser diodes with a
peak wavelength of 660 nm or 780 nm. The S10783 is designed for surface mount and the S10784 is a plastic package with
φ3 mm lens.
Features
Applications
High-speed response
300 MHz typ. (λ=650 nm, VR=2.5 V)
250 MHz typ. (λ=780 nm, VR=2.5 V)
Laser diode monitors of optical disk unit (high-speed APC)
Sensors for red laser diode
High sensitivity
S10783: 0.46 A/W typ. (λ=650 nm)
S10784: 0.45 A/W typ. (λ=650 nm)
Structure
Parameter
Photosensitive area size
Effective photosensitive area
Package
Symbol
-
S10783
φ0.8
0.5
Surface mount type plastic
S10784
φ3.0
7.0
Plastic with lens
Unit
mm
mm2
-
S10784
Unit
V
mW
°C
°C
Absolute maximum ratings
Parameter
Reverse voltage
Power dissipation
Operating temperature
Storage temperature
Symbol
VR max
P
Topr
Tstg
S10783
20
50
-25 to +85
-40 to +100
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
This product does not support lead-free soldering. For details on reflow soldering conditions for surface-mount conponents, please
contact our sales office.
www.hamamatsu.com
1
Si PIN photodiodes
S10783, S10784
Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Spectral response range
Peak sensitivity wavelength
λ
λp
Photosensitivity
S
Dark current
Temperature coefficient of ID
ID
TCID
Cutoff frequency
fc
Terminal capacitance
Noise equivalent power
Ct
NEP
Condition
λ=660 nm
λ=780 nm
VR=2.5 V
VR=2.5 V λ=660 nm
RL=50 Ω λ=780 nm
VR=2.5 V, f=1 MHz
VR=2.5 V
Min.
0.41
0.47
150
125
-
Spectral response
S10783
Typ.
Max.
330 to 1040
760
0.46
0.52
0.01
1.0
1.15
300
250
4.5
9
3.5 × 10-15
-
Min.
0.40
0.46
150
125
-
S10784
Typ.
Max.
340 to 1040
760
0.45
0.51
0.01
1.0
1.15
300
250
4.5
9
3.5 × 10-15
-
Unit
nm
nm
A/W
nA
times/°C
MHz
pF
W/Hz1/2
Linearity
(Typ. Ta=25 °C)
0.6
(Typ. Ta=25 °C, VR=0 V, 2856 K)
1 mA
S10783
100 μA
10 μA
Short circuit current
Photosensitivity (A/W)
0.5
0.4
S10784
0.3
0.2
1 μA
S10784
100 nA
10 nA
S10783
1 nA
0.1
100 pA
0
200
400
600
800
1000
1200
Wavelength (nm)
10 pA
0.01
0.1
1
10
100
1000
10000
Illuminance (lx)
KPINB0355EA
KPINB0396EA
2
Si PIN photodiodes
S10783, S10784
Dark current vs. reverse voltage
Photosensitivity temperature characteristics
(Typ. Ta=25 °C)
Dark current
100 pA
10 pA
1 pA
100 fA
0.01
0.1
1
10
(Typ.)
+1.0
Temperature coefficient (%/°C)
1 nA
+0.5
0
-0.5
400
100
Reverse voltage (V)
500
600
700
800
900
1100
Wavelength (nm)
KPINB0356EA
KPINB0357EA
Dark current vs. ambient temperature
Terminal capacitance vs. reverse voltage
(Typ. VR=2.5 V)
10-7
1000
(Typ. Ta=25 °C, f=1 MHz)
10 pF
10-8
Terminal capacitance
Dark current (A)
10-9
-10
10
-11
10
10-12
10-13
10-14
10
-15
10-16
-20 -10
0
10
20
30
40
50
60
70
80
Ambient temperature (°C)
1 pF
0.1
1
10
100
Reverse voltage (V)
KPINB0363EA
KPINB0358EA
3
Si PIN photodiodes
S10783, S10784
Directivity
S10784
S10783
20°
30°
10°
0°
10°
(Typ. Ta=25 °C)
20°
30°
20°
100%
10°
0°
10°
(Typ. Ta=25 °C)
20°
100%
30°
80%
30°
80%
40°
40°
40°
40°
60%
60%
50°
50°
50°
50°
40%
60°
40%
60°
60°
60°
70°
70°
20%
70°
70°
20%
80°
80°
80°
80°
90°
90°
90°
90°
Relative sensitivity
Relative sensitivity
KPINB0359EA
KPINB0362EA
Frequency characteristics
λ=780 nm
λ=660 nm
(Typ. Ta=25 °C, VR=2.5 V, RL=50 Ω)
+5
Relative output (dB)
Relative output (dB)
+5
0
-3
-5
-10
100 kHz
1 MHz
10 MHz
100 MHz
1 GHz
Frequency
(Typ. Ta=25 °C, VR=2.5 V, RL=50 Ω)
0
-3
-5
-10
100 kHz
1 MHz
10 MHz
100 MHz
1 GHz
Frequency
KPINB0360EA
KPINB0361EA
4
Si PIN photodiodes
S10783, S10784
Dimensional outlines (unit: mm)
S10783
Photosensitive area ( 0.8)
4.8*
5°
1.5 ± 0.4
4.0*
10°
1.5 ± 0.4
4.7*
2.54
5.0 ± 0.2
(Including burr)
0.6
4.1 ± 0.2
(Including burr)
0.4
0.8
1.8
7.0 ± 0.3
0.7 ± 0.3
Photosensitive
surface
0.7 ± 0.3
0.25
10°
Tolerance unless otherwise noted: ±0.1
Position accuracy of photosensitive area center
with respect to the package dimensions marked *
X, Y≤±0.2
θ≤±2°
Lead surface finish: silver plating
Standard packing: stick (50 pcs/stick)
0.1 ± 0.1
5°
NC
Cathode
Anode
Cathode
KPINA0105EB
S10784
6°
8°
4.0 ± 0.2
4.2 max.
(Including burr)
Center of lens
0.7
Lens 3.0
(0.8)
0.45
2.54
6°
4.8*
.5
R1
8°
1.2
9.2 ± 1.0
(1.3)
2.9
5.2 max.
(Including burr)
1.9
3.8*
2.2 ± 0.15
0.45
Tolerance unless otherwise noted: ±0.1
Position accuracy of photosensitive area center
with respect to the package dimensions marked *
X, Y≤±0.2
θ≤±2°
Lead surface finish: silver plating
Standard packing: polyethylene pack [anti-static type]
(500 pcs/pack)
KPINA0032EC
5
Si PIN photodiodes
S10783, S10784
Information described in this material is current as of May, 2013.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KPIN1079E03 May 2013 DN
6