s12158-01ct kpin1084e

Si PIN photodiode
S12158-01CT
COB type, applicable to lead-free solder reflow
The S12158-01CT is a Si PIN photodiode for visible to near infrared range and is compatible with lead-free solder reflow processes. The small and thin leadless package allows reducing the mount area on a printed circuit board.
Features
Applications
COB type, small and thin leadless package
FSO (free space optics)
Applicable to lead-free solder reflow
Optical switches
Photosensitive area: 2.77 × 2.77 mm
Laser radar, etc.
High sensitivity: 0.7 A/W (λ=960 nm)
Structure
Parameter
Photosensitive area
Package
Seal material
Specification
2.77 × 2.77
Glass epoxy
Epoxy resin
Unit
mm
-
Value
20
-25 to +85
-40 to +100
Peak temperature 260 °C, 2 times (see page 4)
Unit
V
°C
°C
-
Absolute maximum ratings
Parameter
Reverse voltage
Operating temperature
Storage temperature
Reflow soldering conditions*1
Symbol
VR max
Topr
Tstg
Tsol
Condition
Ta=25 °C
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
*1: JEDEC level 4
Electrical and optical characterisitcs (Ta=25 °C)
Parameter
Spectral response range
Peak sensitivity wavelength
Photosensitivity
Dark current
Temperature coefficient of ID
Symbol
λ
λp
S
ID
TCID
Cutoff frequency
fc
Terminal capacitance
Ct
Condition
λ=λp
VR=12
VR=12
VR=12
-3 dB
VR=12
V
V
V, RL=50 Ω
V, f=1 MHz
Min.
0.6
-
Typ.
320 to 1100
960
0.7
0.1
1.15
Max.
10
-
Unit
nm
nm
A/W
nA
times/°C
10
25
-
MHz
-
15
30
pF
www.hamamatsu.com
1
Si PIN photodiode
S12158-01CT
Spectral response
Dark current vs. reverse voltage
(Typ. Ta=25 °C)
0.8
(Typ. Ta=25 °C)
10 nA
0.6
1 nA
QE=100%
0.5
Dark current
Photosensitivity (A/W)
0.7
0.4
0.3
0.2
100 pA
10 pA
0.1
0
200
400
600
800
1000
1 pA
0.01
1200
0.1
1
10
Reverse voltage (V)
Wavelength (nm)
KPINB0380EA
KPINB0381EA
Terminal capacitance vs. reverse voltage
Dark current vs. ambient temperature
(Typ. Ta=25 °C)
1 nF
100
(Typ. Ta=25 °C, VR=12 V)
10 μA
100 nA
100 pF
Dark current
Terminal capacitance
1 μA
10 pF
10 nA
1 nA
100 pA
10 pA
1 pA
1 pF
0.1
1
10
100
Reverse voltage (V)
100 fA
-30 -20 -10 0
10 20 30 40 50 60 70 80 90
Ambient temperature (°C)
KPINB0382EA
KPINB0384EA
2
Si PIN photodiode
S12158-01CT
Directivity
30°
20°
Y direction
(Typ. Ta=25 °C, light source: tungsten lamp)
10° 0° 10°
20°
30°
40°
40°
50°
50°
60°
60°
70°
X direction
70°
80° X, Y
direction
90°
100 80 60
80°
40
20
0
20
40
90°
80 100
60
Relative sensitivity (%)
KPINB0383EA
Dimensional outline (unit: mm)
0.3
Center of
photosensitive area
4.2*
0.3
(0.5)
1.12 ± 0.2
Photosensitive
surface
Index mark
0.25
4.2*
Photosensitive area
(2.77 × 2.77)
(1.1) 2.0
0.3
0.7
0.45
Anode (common)
Cathode (common)
2.7
0.75
Tolerance unless otherwise
noted: ±0.1, ±2°
Chip position accuracy with respect
to package dimensions marked*
X, Y≤±0.2, θ≤±2°
Standard packing state: reel (2000 pcs/reel)
KPINA0113EA
Product orientation on reel
Index mark
Reel feed direction
KPINC0020EA
3
Si PIN photodiode
S12158-01CT
Recommended land pattern (unit: mm)
1.0 1.0
0.9
1.35
3.85
KPINC0019EA
Recommended temperature profile of reflow soldering (typical example)
260 °C max.
Temperature
230 °C min.
190 °C
170 °C
Heating
20 to 40 s
Preheating
60 to 120 s
Time
KPINB0385EA
· After unpacking, store this device in an environment at a temperature of 5 to 30 °C and a humidity below 70%, and perform reflow
soldering on this device within 72 hours.
· The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used. Before
actual cleaning, check for any problems by testing out the cleaning methods in advance. A sudden temperature rise and cooling may be
the cause of trouble, so make sure that the temperature change is within 4 °C per second.
Information described in this material is current as of October, 2012.
Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact
us for the delivery specification sheet to check the latest information.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KPIN1084E01 Oct. 2012 DN
4