g1961 etc kgpd1007e

GaP photodiode
G1961
G1962
G1963
Schottky type
Features
Applications
Low dark current
Analytical instruments
High UV sensitivity
UV detection
Structure / Absolute maximum ratings
Type no.
Dimensional
outline/
Window
material
/Q*
/Q
/Q
G1961
G1962
G1963
Package
TO-18
TO-5
TO-8
Effective
Photosensitive
photosensitive
area size
area
(mm)
1.1 × 1.1
2.3 × 2.3
4.6 × 4.6
Absolute maximum ratings
Reverse
voltage
VR max
Operating
temperature
Topr
Storage
temperature
Tstg
(V)
(°C)
(°C)
5
-10 to +60
-20 to +70
(mm2)
1.0
5.2
21
* Window material Q: quartz glass
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type no.
G1961
G1962
G1963
Spectral Peak
response sensitivity
range wavelength
λ
λp
(nm)
(nm)
190 to 550
440
Photosensitivity
Temp.
Terminal
Rise time
Short circuit
Dark
S
coefficient
capacitance
tr
current
current
(A/W)
of
Ct
VR=0 V
Isc
ID
VR=0 V
ID
max.
RL=1 kΩ
1000 lx
TCID
f=10 kHz
Hg
λp line 400 nm
Min. Typ. VR=10 mV VR=1 V
254 nm
(μA) (μA) (pA) (pA) (times/°C) (μs)
(pF)
0.04 0.05 2.5
25
5
400
0.12 0.03 0.1 0.23 0.3
5
50
1.11
10
1500
0.75 0.9
10
100
30
5000
www.hamamatsu.com
Shunt
resistance
Rsh
VR=10 mV
Min.
(GΩ)
4
2
1
Typ.
(GΩ)
40
20
1
Noise
equivalent
power
NEP
(W/Hz1/2)
5.4 × 10-15
7.6 × 10-15
1.1 × 10-14
1
GaP photodiode
G1961, G1962, G1963
Spectral response
Photosensitivity temperature characteristic
(Typ. Ta=25 °C)
0.15
0.1
0.05
0
190
300
400
500
600
700
(Typ.)
+1.5
Temperature coefficient (%/°C)
Photosensitivity (A/W)
0.2
+1.0
+0.5
0
-0.5
190
800
300
400
Wavelength (nm)
500
600
700
Wavelength (nm)
KGPDB0014EA
KGPDB0017EB
Rise time vs. load resistance
Dark current vs. reverse voltage
(Typ. Ta=25 °C, VR=0 V)
10 ms
800
(Typ. Ta=25 °C)
1 nA
G1963
1 ms
100 pA
Dark current
Rise time
G1962
100 µs
G1961
10 µs
G1963
10 pA
G1962
1 pA
1 µs
100 ns 2
10
G1961
3
10
4
10
5
10
6
10
Load resistance (Ω)
100 fA
0.001
0.01
0.1
1
10
Reverse voltage (V)
KGPDB0015EA
KGPDB0016EA
2
GaP photodiode
G1961, G1962, G1963
Shunt resistance vs. ambient temperature
Short circuit current linearity
(Typ. VR=10 mV)
10 TΩ
10-2
Short circuit current (A)
1 TΩ
G1961
100 GΩ
G1962
10 GΩ
G1963
1 GΩ
100 MΩ
RL=100 Ω
10-4
10-6
10-8
-10
10
-12
10
-14
10
10 MΩ
-20
0
+20
+40
+60
+80
Refer to NEP value in characteristic table.
10-16 -16
-14
10
10
10-12 10-10 10-8 10-6 10-4 10-2 100
Incident light level (W)
Ambient temperature (°C)
KGPDB0018EA
KGPDB0008EB
Dimensional outline (unit: mm)
G1961
G1962
9.1 ± 0.2
3.55 ± 0.2
Window
5.9 ± 0.1
0.45
Lead
8.1 ± 0.1
2.9
Photosensitive
surface
0.45
Lead
20
4.7 ± 0.1
4.1 ± 0.2
5.4 ± 0.2
2.4
Window
3.0 ± 0.2
14
Shunt resistance
(Typ. Ta=25 °C, A light source fully illuminated)
0
10
5.08 ± 0.2
2.54 ± 0.2
Connected
to case
Connected
to case
KGPDA0032EA
KGPDA0033EA
3
GaP photodiode
G1961, G1962, G1963
G1963
13.9 ± 0.2
1.9
Photosensitive
surface
0.45
Lead
5.0 ± 0.2
12.35 ± 0.1
15
Window
10.5 ± 0.1
7.5 ± 0.2
Mark ( 1.4)
Connected
to case
KGPDA0034EA
Information described in this material is current as of May, 2012.
Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact
us for the delivery specification sheet to check the latest information.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KGPD1007E02 May 2012 DN
4