VS-VSKU41.., VS-VSKV41.., VS-VSKU56.., VS-VSKV56.. Series Datasheet

VS-VSKU41.., VS-VSKV41.., VS-VSKU56.., VS-VSKV56.. Series
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Vishay Semiconductors
ADD-A-PAK Generation VII Power Modules
Thyristor/Thyristor, 45 A/60 A
FEATURES
• High voltage
• Industrial standard package
• Low thermal resistance
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
ADD-A-PAK
BENEFITS
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
PRODUCT SUMMARY
IT(AV)
45 A/60 A
Type
Modules - Thyristor, Standard
• Up to 1600 V
• High surge capability
• Easy mounting on heatsink
MECHANICAL DESCRIPTION
The ADD-A-PAK generation VII, new generation of
ADD-A-PAK module, combines the excellent thermal
performances obtained by the usage of exposed direct
bonded copper substrate, with advanced compact simple
package solution and simplified internal structure with
minimized number of interfaces.
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IT(AV)
CHARACTERISTICS
85 °C
I2t
45
60
95
50 Hz
850
1200
60 Hz
890
1256
50 Hz
3.61
7.20
60 Hz
3.30
6.57
36.1
72
I2t
VRRM
VS-VSK.56
70
IT(RMS)
ITSM
VS-VSK.41
Range
400 to 1600
400 to 1600
UNITS
A
kA2s
kA2s
V
TStg
-40 to 125
°C
TJ
-40 to 125
°C
Revision: 24-Mar-14
Document Number: 94653
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ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
04
400
500
400
08
800
900
800
12
1200
1300
1200
16
1600
1700
1600
VS-VSK.41
VS-VSK.56
IRRM, IDRM
AT 125 °C
mA
15
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state
current
Maximum continuous RMS
on-state current
Maximum peak, one-cycle
non-repetitive on-state current
SYMBOL
IT(AV)
IT(RMS)
ITSM
TEST CONDITIONS
45
60
DC
70
95
TC
82
81
t = 10 ms
850
1200
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
I2t (1)
No voltage
reapplied
100 % VRRM
reapplied
Sinusoidal
half wave,
initial TJ = TJ maximum
890
1256
715
1000
750
1056
3.61
7.20
3.30
6.57
2.56
5.10
2.33
4.56
t = 0.1 ms to 10 ms, no voltage reapplied 
TJ = TJ maximum
36.1
72
Low level (3)
1.08
0.91
1.12
1.02
4.7
4.27
4.5
3.77
1.81
1.7
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2t for fusing
VS-VSK.41 VS-VSK.56
180° conduction, half sine wave,
TC = 85 °C
No voltage
reapplied
100 % VRRM
reapplied
Initial TJ = TJ maximum
Maximum value of threshold
voltage
VT(TO) (2)
Maximum value of on-state 
slope resistance
rt (2)
Maximum on-state voltage drop
VTM
ITM =  x IT(AV)
dI/dt
TJ = 25 °C, from 0.67 VDRM,
ITM =  x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs
150
Maximum non-repetitive rate of
rise of turned on current
High level (4)
Low level (3)
High level (4)
TJ = TJ maximum
TJ = TJ maximum
TJ = 25 °C
Maximum holding current
IH
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
200
Maximum latching current
IL
TJ = 25 °C, anode supply = 6 V, resistive load
400
UNITS
A
°C
A
kA2s
kA2s
V
m
V
A/μs
mA
Notes
(1) I2t for time t = I2t x t
x
x
(2) Average power = V
2
T(TO) x IT(AV) + rt x (IT(RMS))
(3) 16.7 % x  x I
AV < I <  x IAV
(4) I >  x I
AV
Revision: 24-Mar-14
Document Number: 94653
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TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
TEST CONDITIONS
VS-VSK.41 VS-VSK.56
PGM
10
PG(AV)
2.5
IGM
2.5
- VGM
10
VGT
Maximum gate current required to trigger
IGT
W
A
4.0
TJ = - 40 °C
Maximum gate voltage required to trigger
UNITS
Anode supply = 6 V
resistive load
TJ = 25 °C
TJ = 125 °C
1.7
TJ = - 40 °C
270
Anode supply = 6 V
resistive load
TJ = 25 °C
V
2.5
mA
150
TJ = 125 °C
80
Maximum gate voltage that will not trigger
VGD
TJ = 125 °C, rated VDRM applied
0.25
V
Maximum gate current that will not trigger
IGD
TJ = 125 °C, rated VDRM applied
6
mA
VS-VSK.41 VS-VSK.56
UNITS
15
mA
3000 (1 min)
3600 (1 s)
V
1000
V/μs
VS-VSK.41 VS-VSK.56
UNITS
-40 to 125
°C
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum peak reverse and off-state 
leakage current at VRRM, VDRM
IRRM,
IDRM
TJ = 125 °C, gate open circuit
Maximum RMS insulation voltage
VINS
50 Hz
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = 125 °C, linear to 0.67 VDRM
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction operating and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum internal thermal resistance,
junction to case per leg
RthJC
DC operation
Typical thermal resistance,
case to heatsink per module
RthCS
Mounting surface flat, smooth and
greased
0.44
0.35
°C/W
0.1
A mounting compound is recommended
and the torque should be rechecked after
a period of
3 hours to allow for the spread of the
compound.
to heatsink
Mounting torque ± 10 %
busbar
4
Nm
3
Approximate weight
JEDEC®
Case style
75
g
2.7
oz.
AAP GEN VII (TO-240AA)
R CONDUCTION PER JUNCTION
DEVICES
SINE HALF WAVE CONDUCTION
180°
120°
90°
60°
RECTANGULAR WAVE CONDUCTION
30°
180°
120°
90°
60°
30°
VSK.41..
0.110
0.131
0.17
0.23
0.342
0.085
0.138
0.177
0.235
0.345
VSK.56..
0.088
0.104
0.134
0.184
0.273
0.07
0.111
0.143
0.189
0.275
UNITS
°C/W
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 24-Mar-14
Document Number: 94653
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VS-VSKU41.., VS-VSKV41.., VS-VSKU56.., VS-VSKV56.. Series
Maximum average on-state power loss (W)
130
VSK.41 Series
RthJC (DC) = 0.44°C/W
120
110
100
180°
120°
90°
60°
30°
90
80
0
Maximum allowable case temperature (°C)
Vishay Semiconductors
10
20
30
40
80
180°
120°
90°
60°
30°
60
RMS limit
100
DC
40
20
VSK.41 Series
Per leg, Tj = 125°C
0
0
10
20
30
40
50
60
70
80
Average on-state current (A)
Average on-state current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
800
130
VSK.41 Series
RthJC (DC) = 0.44 °C/W
120
110
100
DC
180°
120°
90°
60°
30°
90
80
70
0
10
20
30
40
50
60
70
At any rated load condition and with
rated Vrrm applied following surge
Initial Tj = Tj max
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100s
700
600
500
400
Per leg
300
1
80
10
100
Number of equal amplitude half cycle current pulses (N)
Average on-state current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
900
80
180°
120°
90°
60°
30°
70
60
50
RMS limit
40
30
20
VSK.41 Series
Per leg, Tj = 125°C
10
0
0
5 10 15 20 25 30 35 40 45 50
Average on-state current (A)
Fig. 3 - On-State Power Loss Characteristics
Peak half sine wave on-state current (A)
Maximum average on-state power loss (W)
120
50
Peak half sine wave on-state current (A)
Maximum allowable case temperature (°C)
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800
700
Maximum Non-repetitive Surge Current
Versus Pulse Train Duration. Control
of conduction may not be maintaned.
Initial Tj = 125°C
No Voltage Reapplied
Rated Vrrm reapplied
600
500
400
Per leg
300
0.01
0.1
1
Pulse train duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
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Maximum total power loss (W)
350
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
180°
(sine)
180°
(rect)
300
250
200
∼
150
100
2 x VSK.41 Series
single phase bridge connected
Tj = 125°C
50
0
0
20
40
60
100
0
80
20
40
60
80
100 120 140
Maximum allowable ambient temperature (°C)
Total output current (A)
Fig. 7 - On-State Power Loss Characteristics
Maximum total power loss (W)
500
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
60°
(rect)
400
300
200
3 x VSK.41 Series
6-pulse midpoint
connection bridge
Tj = 125°C
100
0
0
50
100
150
Total output current (A)
0
200
20
40
60
80
100 120 140
Maximum allowable ambient temperature (°C)
Fig. 8 - On-State Power Loss Characteristics
Instantaneous on-state current (A)
1000
VSK. 41 Series
Per leg
100
10
Tj = 125°C
Tj = 25°C
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Instantaneous on-state voltage (V)
Fig. 9 - On-State Voltage Characteristics
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Document Number: 94653
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VS-VSKU41.., VS-VSKV41.., VS-VSKU56.., VS-VSKV56.. Series
Maximum average on-state power loss (W)
130
VSK.56 Series
RthJC (DC) = 0.35°C/W
120
110
100
180°
120°
90°
60°
30°
90
80
0
Maximum allowable case temperature (°C)
Vishay Semiconductors
10
20
30
40
50
60
180°
120°
90°
60°
30°
120
100
DC
80
RMS limit
60
40
20
VSK.56 Series
Per leg, Tj = 125°C
0
0
20
40
60
80
100
Average on-state current (A)
Average on-state current (A)
Fig. 10 - Current Ratings Characteristics
Fig. 13 - On-State Power Loss Characteristics
1100
130
VSK.56 Series
RthJC (DC) = 0.35 °C/W
120
110
100
DC
180°
120°
90°
60°
30°
90
80
70
0
20
40
60
80
At any rated load condition and with
rated Vrrm applied following surge
Initial Tj = Tj max
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100s
1000
900
800
700
600
500
Per leg
400
1
100
10
100
Number of equal amplitude half cycle current pulses (N)
Average on-state current (A)
Fig. 11 - Current Ratings Characteristics
Fig. 14 - Maximum Non-Repetitive Surge Current
1300
100
180°
120°
90°
60°
30°
80
Peak half sine wave on-state current (A)
Maximum average on-state power loss (W)
140
70
Peak half sine wave on-state current (A)
Maximum allowable case temperature (°C)
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60
RMS limit
40
20
VSK.56 Series
Per leg, Tj = 125°C
0
0
10
20
30
40
50
60
70
Average on-state current (A)
Fig. 12 - On-State Power Loss Characteristics
1200
1100
1000
900
Maximum Non-repetitive Surge Current
Versus Pulse Train Duration. Control
of conduction may not be maintained.
Initial Tj = 125°C
No Voltage Reapplied
Rated Vrrm reapplied
800
700
600
500
400
0.01
Per leg
0.1
1
Pulse train duration (s)
Fig. 15 - Maximum Non-Repetitive Surge Current
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Document Number: 94653
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Maximum total power loss (W)
600
500
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
2 °C/W
180°
(sine)
180°
(rect)
400
∼
300
200
2 x VSK.56 Series
single phase bridge connected
Tj = 125°C
100
0
0
20
40
60
80
100 120 140
0
20
40
60
80
100 120 140
Maximum allowable ambient temperature (°C)
Total output current (A)
Fig. 16 - On-State Power Loss Characteristics
Maximum total power loss (W)
700
600
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
60°
(rect)
500
400
300
200
3 x VSK. 56 Series
6-pulse midpoint
connection bridge
Tj = 125°C
100
0
0
50
100
150
200
250
0
300
20
40
60
80
100 120 140
Maximum allowable ambient temperature (°C)
Total output current (A)
Fig. 17 - On-State Power Loss Characteristics
Instantaneous on-state current (A)
1000
VSK. 56 Series
Per leg
100
10
Tj = 125°C
Tj = 25°C
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Instantaneous on-state voltage (V)
Fig. 18 - On-State Voltage Characteristics
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Document Number: 94653
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VS-VSKU41.., VS-VSKV41.., VS-VSKU56.., VS-VSKV56.. Series
Transient thermal impedance Z thJC (°C/W)
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1
Steady state value
RthJC = 0.44 °C/W
RthJC = 0.35 °C/W
(DC operation)
0.1
VSK.41 Series
VSK.56 Series
Per leg
0.01
0.001
0.01
0.1
1
10
Square wave pulse duration (s)
Fig. 19 - Thermal Impedance ZthJC Characteristics
Rectangular gate pulse
a)Recommended load line for
rated di/ dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/ dt: 20 V, 65 ohms
10
tr = 1 µs, tp >= 6 µs
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
(a)
(b)
TJ = -40 °C
TJ = 125 °C
1
TJ = 25 °C
Instantaneous gate voltage (V)
100
(4) (3)
(2) (1)
VGD
IGD
0.1
0.001
VSK.
IRK.41../ .56.. Series
0.01
0.1
1
Frequency Limited by PG(AV)
10
100
1000
Instantaneous gate current (A)
Fig. 20 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-VS
K
U
56
1
2
3
4
1
/
16
5
3
-
Vishay Semiconductors product
Module type
Circuit configuration (see Circuit Configuration table)
4
-
Current code
5
-
2
41 = 45 A
Voltage code (see Voltage Ratings table) 56 = 60 A
Note
• To order the optional hardware go to www.vishay.com/doc?95172
Revision: 24-Mar-14
Document Number: 94653
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CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
VSKU
(1)
+
1
Two SCRs common cathodes
2
U
(2)
3
4 5 7 6
(3)
G1 K1 K2 G2
(4) (5) (7) (6)
VSKV
(1)
-
1
Two SCRs common anodes
V
2
+
(2)
3
4 5 7 6
+
(3)
G1 K1 K2 G2
(4) (5) (7) (6)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95368
Revision: 24-Mar-14
Document Number: 94653
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Outline Dimensions
Vishay Semiconductors
ADD-A-PAK Generation VII - Thyristor
DIMENSIONS in millimeters (inches)
29 ± 0.5
(1 ± 0.020)
30 ± 0.5
(1.18 ± 0.020)
35 REF.
18 (0.7) REF.
30 ± 1 (1.18 ± 0.039)
15.5 ± 0.5
(0.6 ± 0.020)
24 ± 0.5
(1 ± 0.020)
Viti M5 x 0.8
Screws M5 x 0.8
6.7 ± 0.3 (0.26 ± 0.012)
Fast-on tab 2.8 x 0.8 (0.110 x 0.03)
Document Number: 95368
Revision: 11-Nov-08
20 ± 0.5 (0.79 ± 0.020)
20 ± 0.5 (0.79 ± 0.020)
92 ± 0.75 (3.6 ± 0.030)
5.8 ± 0.25 (0.228 ± 0.010)
15 ± 0.5 (0.59 ± 0.020)
For technical questions, contact: [email protected]
4 ± 0.2 (0.157 ± 0.008)
7 6
4 5
3
2
1
6.3 ± 0.2 (0.248 ± 0.008)
22.6 ± 0.2
(0.89 ± 0.008)
80 ± 0.3 (3.15 ± 0.012)
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
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operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
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Document Number: 91000