Photosensor with front-end IC S13282-01CR Compact APD suitable for various light level detection The S13282-01CR is a compact optical device that integrates a Si APD and preamp. It has a built-in DC feedback circuit for reducing the effects of background light. It also provides excellent noise and frequency characteristics. Features Applications High-speed response: 200 MHz Distance measurement Two-level gain switch function (low gain: single output, high gain: defferential output) Option Reduced background light effects Small waveform distortion when excessive light is incident Driver circuit C13283-03 Structure Parameter Detector Photosensitive area size*1 Package Symbol A - Specification Si APD ϕ0.2 Plastic Unit mm - *1: Photosensitive area in which a typical gain can be obtained Absolute maximum ratings Parameter Supply voltage (for preamp) Reverse voltage (for APD) Reverse current (DC) Forward current DCFB terminal voltage Gain terminal voltage Operating temperature Storage temperature Soldering conditions*3 Symbol Vcc max V_APD IR max IF max Topr Tstg - Condition No dew condensation*2 No dew condensation*2 Value 4.5 0 to VBR 0.2 10 Vcc + 0.7 Vcc + 0.7 -20 to +60 -40 to +80 Peak temperature 240 °C, 1 time (see P.5) Unit V V mA mA V V °C °C - *2: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. *3: JEDEC level 5a Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. www.hamamatsu.com 1 Photosensor with front-end IC S13282-01CR Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photosensitivity Symbol λ λp S Quantum efficiency Breakdown voltage Temperature coefficient of breakdown voltage Dark current Temperature coefficient of dark current QE VBR Condition Min. M=100 λ=900 nm, M=100, low gain λ=900 nm, M=100, high gain λ=900 nm, M=1 ID=100 μA ΔTID M=100 λ=900 nm, M=100 Low gain High gain Low gain fcl High gain Low gain fch High gain f=10 MHz, M=100 en f=100 MHz, M=100 Low gain High gain Voffset High gain Low gain Vp-p max High gain Vcc1, Vcc2 Current consumption Ic Low cutoff frequency High cutoff frequency Input conversion noise power Output voltage level Output offset voltage Maximum output voltage amplitude Supply voltage Spectral response 0.1 0.2 0.4 2 4 8 120 70 160 200 % V - 1.1 - V/°C 10 100 1000 pA - 1.1 - times/°C 17 20 120 100 0.6 0.7 3.135 25 28 0.01 0.5 50 65 0.9 1 -0.5 ±0.7 3.3 32 35 100 130 1.2 1.3 ±100 3.465 - mA MHz MHz fW/Hz1/2 V mV V V Quantum efficiency vs. wavelength (Typ. Ta=25 °C, M=100) 60 Unit nm nm MV/W ΔTVBR ID Max. - Typ. 400 to 1150 840 (Typ. Ta=25 °C) 100 90 80 Quantum efficiency (%) Photosensitivity (A/W) 50 40 30 20 70 60 50 40 30 20 10 10 0 400 600 800 1000 1200 Wavelength (nm) 0 400 600 800 1000 1200 Wavelength (nm) KPICB0187EB KPICB0188EA 2 Photosensor with front-end IC S13282-01CR Dark current vs. reverse voltage Gain vs. reverse voltage (Typ. Ta=25 °C) 100 μA (Typ. λ=900 nm) 10000 10 μA 0 °C 1000 20 °C 40 °C 60 °C -10 °C 100 nA Gain Dark current 1 μA 10 nA 100 1 nA 100 pA 10 10 pA 1 pA 0 20 40 60 80 100 120 140 160 180 200 1 100 120 140 160 180 200 220 Reverse voltage (V) Reverse voltage (V) KPICB0189EB KPICB0191EA Frequency characteristics (typical example) (Ta=25 °C) 5 0 Relative gain (dB) Low -5 -10 High -15 -20 -25 0.1 1 10 100 1000 Frequency (MHz) KPICB0192EB 3 Photosensor with front-end IC Directivity S13282-01CR (Typ. light source: tungsten lamp) 20° 10° 0° 10° 20° 30° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 80° 90° 100 80 60 40 20 0 20 40 60 80 90° 100 Relative sensitivity (%) KPICB0193EA Truth table Gain selection Gain selection 0 1 Gain Low gain (× 1) High gain (× 20) DCFB_dis selection DCFB_dis selection 0 1 Background light elimination function ON OFF Block diagram V_APD APD Vcc1 Vcc2 Rf SW1 TIA VGA out1 SW2 out2 SW3 DCFB DCFB GND Gain The DCFB (DC feedback) circuit detects the DC component of photocurrent, and reduces the effects of background light through the differential processor. KPICC0285EB 4 Photosensor with front-end IC S13282-01CR Measured example of temperature profile with our hot-air reflow oven for product testing 300 °C 240 °C max. Temperature 220 °C 190 °C 170 °C Preheat 70 to 90 s Soldering 40 s max. Time KPICB0171EA ∙ This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a humidity of 60% or less, and perform soldering within 24 hours. ∙ The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used. Before actual reflow soldering, check for any problems by testing out the reflow soldering methods in advance. Dimensional outline (unit: mm) 0.8 0.2 4.8 5.5 1.60 1.1 1.1 0.4 5.1 1.0 KPICC0286EC Dimensions without tolerance: reference value 0.60 0.6 2.7 (6 ×) P0.8=4.8 0.3 0.6 0.6 0.6 2.6 3.9 0.3 Photosensitive area ɸ0.2 Recommended land pattern (unit: mm) Pin no. Function Pin no. Function NC out2 NC GND GND Gain GND Vcc2 DCFB Vcc1 GND NC out1 V_APD KPICA0100EC 5 Photosensor with front-end IC S13282-01CR Connection example Vcc1 V_APD 1 kΩ 0.047 μF/ 630 V Vcc2 L L 10 μF 10 μF 0.1 μF 0.1 μF L∙∙∙BLM18PG221SN1 APD Rf Out1 TIA VGA Out2 DCFB 200 Ω 200 Ω DCFB GND Gain KPICC0298EA Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic packages ∙ Surface mount type products Information described in this material is current as of June, 2016. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KPIC1096E04 Jun. 2016 DN 6