Power Transistors 2SB951, 2SB951A Silicon PNP epitaxial planar type Darlington ● ■ Absolute Maximum Ratings Parameter Symbol Collector to 2SB951 base voltage 2SB951A Collector to 2SB951 Ratings Unit –60 VCBO 4.2±0.2 2.7±0.2 7.5±0.2 16.7±0.3 (TC=25˚C) 5.5±0.2 φ3.1±0.1 4.0 ● High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw 14.0±0.5 ● 4.2±0.2 1.4±0.1 Solder Dip ■ Features Unit: mm 10.0±0.2 0.7±0.1 For midium-speed switching Complementary to 2SD1277 and 2SD1277A 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 V –80 1.3±0.2 5.08±0.5 emitter voltage 2SB951A –60 VCEO V –80 Emitter to base voltage VEBO –7 V Peak collector current ICP –12 A Collector current IC –8 A Collector power TC=25°C dissipation Ta=25°C Junction temperature Tj Storage temperature Tstg 2SB951 2SB951A ICBO Emitter cutoff current IEBO Collector to emitter 2SB951 voltage 2SB951A Forward current transfer ratio Internal Connection B 150 ˚C –55 to +150 ˚C Symbol current Conditions min typ max –100 VCB = –80V, IE = 0 –100 VEB = –7V, IC = 0 –2 –60 VCEO IC = –30mA, IB = 0 hFE1* VCE = –3V, IC = –4A 2000 500 hFE2 VCE = –3V, IC = –8A VCE(sat) IC = –4A, IB = –8mA Base to emitter saturation voltage VBE(sat) IC = –4A, IB = –8mA Transition frequency fT VCE = –10V, IC = –1A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf FE1 E VCB = –60V, IE = 0 Collector to emitter saturation voltage *h 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) (TC=25˚C) Parameter Collector cutoff 3 W 2 ■ Electrical Characteristics 2 C 45 PC 1 IC = –4A, IB1 = –8mA, IB2 = 8mA, VCC = –50V Unit µA mA V –80 10000 –1.5 –2 V V 20 MHz 0.5 µs 2 µs 1 µs Rank classification Rank hFE1 Q P 2000 to 5000 4000 to 10000 1 Power Transistors 2SB951, 2SB951A PC — Ta IC — VCE (1) 20 –5 – 0.8mA –4 – 0.6mA –3 – 0.4mA –2 (2) (3) – 0.2mA –1 (4) 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –1 –10 (3) –3 (2) (1) –1 Base to emitter saturation voltage VBE(sat) (V) IC/IB=500 –10 TC=–25˚C 25˚C 100˚C –3 –1 – 0.3 – 0.3 –1 –3 –10 – 0.1 – 0.1 – 0.3 –3 104 –25˚C 103 –1 –3 –10 Collector current IC (A) –3 –10 (1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25˚C –30 –10 (1) (2) (3) –3 –1 – 0.1 – 0.1 –10 –1 –3 –10 Area of safe operation (ASO) –100 10000 IE=0 f=1MHz TC=25˚C 300 100 30 Non repetitive pulse TC=25˚C –30 ICP –10 IC t=1ms –3 10ms DC –1 – 0.3 10 – 0.1 3 1 – 0.1 – 0.3 – 0.3 Collector current IC (A) 1000 25˚C –1 –100 Collector current IC (A) Collector output capacitance Cob (pF) Forward current transfer ratio hFE –1 3000 – 0.3 – 0.3 Collector current IC (A) Cob — VCB VCE=–3V TC=100˚C – 0.1 – 0.1 – 0.3 hFE — IC 105 –25˚C –1 VBE(sat) — IC –30 Collector current IC (A) 102 – 0.1 –5 TC=100˚C – 0.3 Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) (1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25˚C –30 –4 25˚C –3 VBE(sat) — IC –100 – 0.3 2 –3 –10 Collector to emitter voltage VCE (V) VCE(sat) — IC –100 – 0.1 – 0.1 –2 –30 2SB951 10 IB=–2.0mA –1.8mA –1.6mA –1.4mA –1.2mA –1.0mA –6 IC/IB=500 – 0.03 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) – 0.01 –1 –3 –10 –30 2SB951A 30 TC=25˚C –7 Base to emitter saturation voltage VBE(sat) (V) 40 –100 Collector to emitter saturation voltage VCE(sat) (V) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) VCE(sat) — IC –8 Collector current IC (A) Collector power dissipation PC (W) 50 –100 –300 –1000 Collector to emitter voltage VCE (V) Power Transistors 2SB951, 2SB951A Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3