Power Transistors 2SB953, 2SB953A Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1444 and 2SD1444A Unit: mm ■ Absolute Maximum Ratings Parameter 2SB953 base voltage 2SB953A Collector to 2SB953 Ratings –40 VCBO –50 –20 VCEO emitter voltage 2SB953A Emitter to base voltage –40 V Peak collector current ICP –12 A Collector current IC –7 A Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C current 2SB953A Collector to emitter 2SB953 voltage 2SB953A Forward current transfer ratio 4.2±0.2 7.5±0.2 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) Conditions min typ max VCB = –40V, IE = 0 –50 VCB = –50V, IE = 0 –50 IEBO VEB = –5V, IC = 0 –50 VCEO IC = –10mA, IB = 0 hFE1 VCE = –2V, IC = – 0.1A 45 hFE2* VCE = –2V, IC = –2A 90 ICBO Emitter cutoff current 1.3±0.2 (TC=25˚C) Symbol 2SB953 0.8±0.1 W 2 Parameter Collector cutoff 1.4±0.1 V 30 ■ Electrical Characteristics φ3.1±0.1 1 PC Ta=25°C 2.7±0.2 V –5 dissipation 16.7±0.3 Unit VEBO Collector power TC=25°C 4.2±0.2 5.5±0.2 (TC=25˚C) Symbol Collector to 10.0±0.2 4.0 ● 14.0±0.5 ● Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package which can be installed to the heat sink with one screw Solder Dip ● 0.7±0.1 ■ Features –20 Unit µA µA V –40 260 Collector to emitter saturation voltage VCE(sat) IC = –5A, IB = – 0.16A – 0.6 V Base to emitter saturation voltage VBE(sat) IC = –5A, IB = – 0.16A –1.5 V Transition frequency fT VCE = –10V, IC = – 0.5A, f = 10MHz 150 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 140 pF Turn-on time ton 0.1 µs Storage time tstg 0.5 µs Fall time tf 0.1 µs *h FE2 IC = –2A, IB1 = –66mA, IB2 = 66mA Rank classification Rank Q P hFE2 90 to 180 130 to 260 Note: Ordering can be made by the common rank (PQ rank hFE2 = 90 to 260) in the rank classification. 1 Power Transistors 2SB953, 2SB953A IC — VCE 40 30 (1) 20 10 –50mA –45mA –40mA –5 (2) –35mA –4 –30mA –3 –25mA –20mA –2 –10mA 0 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –1 –2 –3 –4 –5 –6 TC=–25˚C 100˚C 25˚C – 0.1 – 0.03 – 0.3 –1 –3 – 0.3 1000 25˚C TC=100˚C 300 100 –25˚C 30 10 3 300 100 30 10 3 Cob — VCB –1 –3 –10 –30 1 – 0.01 – 0.03 – 0.1 – 0.3 –100 Pulsed tw=1ms Duty cycle=1% IC/IB=30 (–IB1=IB2) VCC=–20V TC=25˚C –3 –1 ton ICP –10 IC t=1ms 10ms –3 –1 DC – 0.3 – 0.1 10 Non repetitive pulse TC=25˚C –30 tstg – 0.3 30 – 10 Area of safe operation (ASO) Collector current IC (A) Switching time ton,tstg,tf (µs) 100 –3 –100 –10 300 –1 Collector current IC (A) ton, tstg, tf — IC 10000 –10 VCE=–10V f=10MHz TC=25˚C Collector current IC (A) 1000 –3 3000 1 – 0.1 – 0.3 –10 IE=0 f=1MHz TC=25˚C –1 Collector current IC (A) VCE=–2V 3000 Collector current IC (A) 3000 – 0.01 – 0.1 fT — IC 1000 – 0.01 – 0.1 –25˚C 10000 10000 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) –3 – 0.3 –1 hFE — IC IC/IB=30 –1 25˚C Collector to emitter voltage VCE (V) VBE(sat) — IC –10 –3 – 0.3 Transition frequency fT (MHz) 40 IC/IB=30 TC=100˚C – 0.03 –5mA (4) 20 –10 – 0.1 –15mA –1 (3) 0 Collector output capacitance Cob (pF) TC=25˚C IB=–60mA Collector current IC (A) Collector power dissipation PC (W) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 tf – 0.1 – 0.03 3 1 – 0.1 – 0.3 – 0.03 – 0.01 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) 2 VCE(sat) — IC –6 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 50 0 –1 –2 –3 –4 –5 –6 –7 Collector current IC (A) –8 – 0.01 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector to emitter voltage VCE (V) Power Transistors 2SB953, 2SB953A Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3