Power Transistors 2SD1277, 2SD1277A Silicon NPN triple diffusion planar type Darlington For midium speed power switching Complementary to 2SB951 and 2SB951A Unit: mm ■ Parameter Symbol Collector to 2SD1277 base voltage 2SD1277A Collector to 2SD1277 emitter voltage 2SD1277A Ratings 60 VCBO 0.7±0.1 VEBO 7 V Peak collector current ICP 12 A Collector current IC 8 A dissipation Ta=25°C Junction temperature Tj Storage temperature Tstg 4.2±0.2 0.8±0.1 1.3±0.2 0.5 +0.2 –0.1 2.54±0.25 1 V 80 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) Internal Connection C 45 PC 1.4±0.1 5.08±0.5 60 Emitter to base voltage Collector power TC=25°C φ3.1±0.1 V 80 VCEO Unit 2.7±0.2 7.5±0.2 16.7±0.3 Absolute Maximum Ratings (TC=25˚C) 14.0±0.5 ● 5.5±0.2 4.0 High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw ● 4.2±0.2 Solder Dip ■ Features ● 10.0±0.2 W 2 B 150 ˚C –55 to +150 ˚C E ■ Electrical Characteristics (TC=25˚C) Parameter Symbol Collector cutoff 2SD1277 current 2SD1277A ICBO IEBO Emitter cutoff current Collector to emitter 2SD1277 voltage 2SD1277A Forward current transfer ratio Conditions max 100 VCB = 80V, IE = 0 100 VEB = 7V, IC = 0 2 60 VCEO IC = 30mA, IB = 0 hFE1* VCE = 3V, IC = 4A 2000 500 hFE2 VCE = 3V, IC = 8A VCE(sat) IC = 4A, IB = 8mA Base to emitter saturation voltage VBE(sat) IC = 4A, IB = 8mA Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf FE1 typ VCB = 60V, IE = 0 Collector to emitter saturation voltage *h min IC = 4A, IB1 = 8mA, IB2 = –8mA, VCC = 50V Unit µA mA V 80 10000 1.5 2 20 V V MHz 0.5 µs 4 µs 1 µs Rank classification Rank hFE1 Q P 2000 to 5000 4000 to 10000 1 Power Transistors 2SD1277, 2SD1277A PC — Ta IC — VCE 40 30 20 (2) 10 TC=25˚C 10 8 IB=4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 6 1.0mA 4 0.5mA 2 (3) (4) 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 1 2 3 4 5 3 1 0.3 0.1 0.03 0.01 0.1 0.3 1 3 10 30 Collector current IC (A) VCB(sat) — IC hFE — IC TC=100˚C 25˚C 3 –25˚C 1 0.3 0.1 0.03 0.01 0.1 0.3 1 3 10 3 1 25˚C 0.1 0.03 0.3 1 3 10 t=10ms IC 3 1ms DC 1 0.3 0.01 1 3 10 30 2SD1277A 2SD1277 0.1 0.03 100 300 Collector to emitter voltage VCE 300 100 30 1000 (V) 0.3 1 3 10 30 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) ICP –25˚C 10 0.1 30 103 10 25˚C 1000 0.3 Area of safe operation (ASO) Non repetitive pulse TC=25˚C TC=100˚C 3000 100˚C Collector current IC (A) 100 30 30000 10000 TC=–25˚C 0.01 0.1 30 VCE=3V IC/IB=500 10 Forward current transfer ratio hFE IC/IB=500 10 Base to emitter saturation voltage VBE(sat) (V) 100000 Collector current IC (A) Collector current IC (A) (1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25˚C (3) (2) (1) 10 Collector to emitter voltage VCE (V) VCE(sat) — IC 2 Collector to emitter saturation voltage VCE(sat) (V) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) (1) 0 Collector to emitter saturation voltage VCE(sat) (V) VCE(sat) — IC 12 Collector current IC (A) Collector power dissipation PC (W) 50 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 100