Power Transistors 2SD1474 Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio Unit: mm 0.7±0.1 ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 15 V Peak collector current ICP 12 A Collector current IC 6 A Base current IB 3 A Collector power TC=25°C Ta=25°C dissipation 40 PC Junction temperature Tj Storage temperature Tstg 4.2±0.2 7.5±0.2 16.7±0.3 φ3.1±0.1 1.4±0.1 0.8±0.1 1.3±0.2 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) W 2 ■ Electrical Characteristics 2.7±0.2 4.0 ● 14.0±0.5 ● High forward current transfer ratio hFE which has satisfactory linearity High emitter to base voltage VEBO Full-pack package which can be installed to the heat sink with one screw 4.2±0.2 5.5±0.2 Solder Dip ■ Features ● 10.0±0.2 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 100V, IE = 0 100 µA Emitter cutoff current IEBO VEB = 15V, IC = 0 100 µA Collector to emitter voltage VCEO IC = 25mA, IB = 0 60 Forward current transfer ratio hFE* VCE = 4V, IC = 1A 300 Collector to emitter saturation voltage VCE(sat) IC = 5A, IB = 0.1A Transition frequency fT VCE = 12V, IC = 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf *h FE IC = 5A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 50V V 2000 0.5 V 30 MHz 0.3 µs 1.5 µs 0.6 µs Rank classification Rank hFE Q P 300 to 1200 800 to 2000 1 Power Transistors 2SD1474 PC — Ta IC — VCE VCE(sat) — IC 6 Collector to emitter saturation voltage VCE(sat) (V) 80 60 50 (1) 40 30 20 5 Collector current IC (A) 9mA 8mA 4 7mA 6mA 3 5mA 4mA 2 3mA 2mA 1 (2) 10 IB=10mA 1mA (3) 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 25˚C 0.1 0.03 0.01 0.1 0.3 1 3 TC=100˚C 25˚C 103 –25˚C 102 Switching time ton,tstg,tf (µs) Collector output capacitance Cob (pF) 0.3 1 3 0.01 0.1 0.3 100 30 10 3 Collector to base voltage VCB (V) 10 VCE=12V f=10MHz TC=25˚C 100 30 10 3 1 10 3 tstg 1 tf 0.3 0.1 0.3 1 3 10 Area of safe operation (ASO) 100 Non repetitive pulse TC=25˚C 30 ton 0.1 ICP 10 IC 3 t=10ms DC 1 0.3 0.1 0.03 0.01 0.01 100 3 Collector current IC (A) 0.03 30 1 300 0.1 0.01 0.03 10 Pulsed tw=1ms Duty cycle=1% IC/IB=50 (IB1=–IB2) VCC=50V TC=25˚C 30 300 10 0.03 Collector current IC (A) ton, tstg, tf — IC IE=0 f=1MHz TC=25˚C 3 –25˚C 0.1 Collector current IC (A) 1000 2 0.1 100 1 25˚C 0.3 Cob — VCB 0.3 0.3 fT — IC 104 10 0.01 0.03 10 10000 1 0.1 TC=100˚C 1000 Collector current IC (A) 3000 1 VCE=2V Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) TC=–25˚C 100˚C 12 3 hFE — IC 3 0.3 10 105 IC/IB=50 1 8 IC/IB=50 Collector to emitter voltage VCE (V) VBE(sat) — IC 10 6 Transition frequency fT (MHz) 0 Collector current IC (A) Collector power dissipation PC (W) TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2.0W) 70 10 0 1 2 3 4 5 6 7 Collector current IC (A) 8 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SD1474 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3