Power Transistors 2SD1457, 2SD1457A Silicon NPN triple diffusion planar type Darlington For power amplification Unit: mm ● 0.7 High foward current transfer ratio hFE High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw ■ Absolute Maximum Ratings Parameter Symbol Collector to base voltage Collector to (TC=25˚C) 2SD1457 emitter voltage 2SD1457A Ratings VCBO 200 150 VCEO 200 Peak collector current ICP 10 A Collector current IC 6 A 60 Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics Parameter 1.1±0.1 0.6±0.2 5.45±0.3 10.9±0.5 1 V PC 2.0±0.1 V 5 Ta=25°C 2.0±0.2 V VEBO dissipation φ3.2±0.1 Unit Emitter to base voltage Collector power TC=25°C 21.0±0.5 15.0±0.2 ● 5.0±0.2 3.2 16.2±0.5 12.5 3.5 Solder Dip ■ Features ● 15.0±0.3 11.0±0.2 2 3 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) Internal Connection C W 3 B 150 ˚C –55 to +150 ˚C E (TC=25˚C) Symbol Conditions min typ max Unit 100 µA Collector cutoff current ICBO VCB = 200V, IE = 0 Collector to emitter voltage VCEO(sus) IC = 2A, L = 10mH Emitter to base voltage VEBO IE = 0.1A, IC = 0 Forward current transfer ratio hFE* VCE = 2V, IC = 2A Collector to emitter saturation voltage VCE(sat) IC = 3A, IB = 0.06A 1.5 V Base to emitter saturation voltage VBE(sat) IC = 3A, IB = 0.06A 2.5 V Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz *h FE 150 V 5 V 700 10000 15 MHz Rank classification Rank hFE Q P O 700 to 2500 2000 to 5000 4000 to 10000 1 Power Transistors 2SD1457, 2SD1457A PC — Ta IC — VCE VCE(sat) — IC (1) 60 TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (PC=3.0W) 80 Collector to emitter saturation voltage VCE(sat) (V) 5 Collector current IC (A) 40 20 4 IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 3 2 0.2mA 1 (2) (3) 0 0 0 25 50 75 100 125 150 0 Ambient temperature Ta (˚C) 1 2 4 VCE=2V Forward current transfer ratio hFE 3 30000 3000 TC=–25˚C 1 0.1 0.03 0.3 1 3 TC=100˚C 25˚C 300 –25˚C 100 30 0.1 0.3 1 t=1ms ICP 0.1ms IC 3ms 20ms DC 0.3 0.01 1 3 10 30 2SD1457A 0.03 2SD1457 0.1 100 300 Collector to emitter voltage VCE 1000 (V) Thermal resistance Rth(t) (˚C/W) Non repetitive pulse TC=25˚C 1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 10 IE=0 f=1MHz TC=25˚C 3 300 100 30 10 3 1 0.1 10 0.3 1 3 10 30 (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–3 10–2 10–1 100 Collector to base voltage VCB (V) Rth(t) — t 103 3 0.1 Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 10 –25˚C 0.3 1000 10 0.01 0.03 10 100 30 25˚C TC=100˚C 1 3000 1000 25˚C 0.1 3 Cob — VCB 10000 10 0.3 10 10000 IC/IB=50 30 100˚C IC/IB=50 30 hFE — IC Collector current IC (A) Collector current IC (A) 6 100000 0.01 0.01 0.03 2 5 100 Collector to emitter voltage VCE (V) VBE(sat) — IC 100 Base to emitter saturation voltage VBE(sat) (V) 3 Collector output capacitance Cob (pF) Collector power dissipation PC (W) 100 1 10 Time t (s) 102 103 104