PANASONIC 2SK2128

Power F-MOS FETs
2SK2128
Silicon N-Channel Power F-MOS FET
■ Features
● Avalanche energy capacity guaranteed: EAS > 15mJ
● VGSS = ±20V guaranteed
● High-speed switching: tf = 35ns
● No secondary breakdown
unit: mm
4.6±0.2
φ3.2±0.1
9.9±0.3
2.9±0.2
+0.5
13.7–0.2
■ Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol
*
Ratings
Unit
VDSS
800
V
Gate to Source voltage
VGSS
±30
V
DC
ID
±2
A
Pulse
IDP
±4
A
EAS*
15
mJ
Avalanche energy capacity
Allowable power
TC = 25°C
dissipation
Ta = 25°C
40
PD
2.6±0.1
1.2±0.15
1.45±0.15
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
Drain to Source breakdown voltage
Drain current
3.0±0.2
● Contactless relay
● Diving circuit for a solenoid
● Driving circuit for a motor
● Control equipment
● Switching power supply
4.1±0.2 8.0±0.2
Solder Dip
15.0±0.3
■ Applications
7
1 2 3
1: Gate
2: Drain
3: Source
TO-220E Package
W
2
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
L = 5mH, IL = 2.45A, VDD = 50V, 1 pulse
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current
IDSS
VDS = 640V, VGS = 0
0.1
mA
Gate to Source leakage current
IGSS
VGS = ±30V, VDS = 0
±1
µA
Drain to Source breakdown voltage
VDSS
ID = 1mA, VGS = 0
Gate threshold voltage
Vth
VDS = 25V, ID = 1mA
Drain to Source ON-resistance
RDS(on)
VGS = 10V, ID = 1A
Forward transfer admittance
| Yfs |
VDS = 25V, ID = 1A
Diode forward voltage
VDSF
IDR = 2A, VGS = 0
Input capacitance (Common Source) Ciss
Output capacitance (Common Source)
Coss
VDS = 20V, VGS = 0, f = 1MHz
Reverse transfer capacitance (Common Source) Crss
800
V
2
4.8
0.7
5
V
7
Ω
1.1
S
−1.3
V
350
pF
60
pF
25
pF
Turn-on time (delay time)
td(on)
15
ns
Rise time
tr
VGS = 10V, ID = 1A
20
ns
Fall time
tf
VDD = 200V, RL = 200Ω
25
ns
Turn-off time (delay time)
td(off)
60
ns
Thermal resistance between channel and case
Rth(ch-c)
3.125
°C/W
1
Power F-MOS FETs
2SK2128
PD  Ta
Area of safe operation (ASO)
100
50
10
IDP
t=100µs
ID
1
1ms
10ms
100ms
DC
0.1
30
(1) TC=Ta
(2) Without heat sink
(PD=2W)
40
30
(1)
20
10
(2)
25
20
15
10
5
0
0.01
1
10
100
1000
0
Drain to source voltage VDS (V)
40
20
60
0
25
80 100 120 140 160
Ambient temperature Ta (˚C)
ID  VDS
ID  VGS
Gate threshold voltage Vth (V)
6.5V
6V
1
5.5V
TC=0˚C
25˚C
100˚C
125˚C
7V
150
175
Vth  TC
4
10V
2
125
VDS=25V
Drain current ID (A)
VGS=15V
100
6
TC=25˚C
3
75
50
Junction temperature Tj (˚C)
5
4
Drain current ID (A)
VDD=50V
ID=2A
Avalanche energy capacity EAS (mJ)
Allowable power dissipation PD (W)
Non repetitive pulse
TC=25˚C
Drain current ID (A)
EAS  Tj
3
2
1
VDS=25V
ID=1mA
5
4
3
2
1
5V
0
0
0
10
20
30
40
50
60
0
Drain to source voltage VDS (V)
2
4
10
12
10
8
VGS=10V
15V
4
2
0
1
2
3
4
Drain current ID (A)
5
50
75
100
125
150
Ciss, Coss, Crss  VDS
VDS=25V
TC=25˚C
f=1MHz
TC=25˚C
1000
1.5
1.0
0.5
0
0
25
Case temperature TC (˚C)
10000
2.0
6
0
| Yfs |  ID
12
Forward transfer admittance |Yfs| (S)
Drain to source ON-resistance RDS(on) (Ω)
8
Gate to source voltage VGS (V)
RDS(on)  ID
2
6
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
0
0
1
2
3
Drain current ID (A)
4
Ciss
100
Coss
Crss
10
1
0
50
100
150
200
Drain to source voltage VDS (V)
Power F-MOS FETs
2SK2128
VDS, VGS  Qg
td(on), tr, tf, td(off)  ID
120
700
14
600
12
500
10
VGS
VDS
400
8
300
6
200
4
100
2
0
0
4
8
12
16
20
Switching time td(on),tr,tf,td(off) (ns)
16
ID=2A
TC=25˚C
Gate to source voltage VGS (V)
Drain to source voltage VDS (V)
800
VDD=200V
VGS=10V
TC=25˚C
100
80
60
td(off)
40
tf
tr
td(on)
20
0
0
24
0
Gate charge amount Qg (nC)
0.5
1.0
1.5
2.0
2.5
Drain current ID (A)
Rth(t)  t
Thermal resistance Rth(t) (˚C/W)
102
(1)
Notes: Rth was measured at Ta=25˚C
and under natural convection.
(1) without heat sink
(2) with a 100 × 100 × 2mm Al heat sink
(2)
10
d=1
0.5
1
0.1
10–1
0.05
0.01
tP
10–2
10–4
T
10–3
10–2
10–1
1
10
102
d=
tP
T
103
Time t (s)
3