Power F-MOS FETs 2SK1610 Silicon N-Channel Power F-MOS FET ■ Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS(on), high-speed switching characteristic unit: mm 15.0±0.5 500 V VGSS ±30 V DC ID ±13 A Pulse IDP ±26 A EAS* Avalanche energy capacity Allowable power TC = 25°C dissipation Ta = 25°C 170 PD 2.5 Tch 150 °C Storage temperature Tstg −55 to +150 °C 1.4±0.3 0.6±0.2 5.45±0.3 10.9±0.5 1 W Channel temperature 4.0±0.1 15.0±0.2 2.0±0.2 1.1±0.1 mJ 120 2.0±0.1 φ3.2±0.1 Solder Dip VDSS Gate to Source voltage 20.0±0.3 Unit Drain to Source breakdown voltage Drain current * Ratings 19.0±0.3 Symbol 10.5±0.5 3.5 Parameter 16.2±0.5 ■ Absolute Maximum Ratings (TC = 25°C) 12.5 ● High-speed switching (switching power supply) ● For high-frequency power amplification 4.5±0.2 13.0±0.5 4.0±0.1 ■ Applications 2 3 1: Gate 2: Drain 3: Source EIAJ: SC-65(a) TOP-3 Package (a) Single pulse ■ Electrical Characteristics (TC = 25°C) Parameter Symbol Conditions IDSS Gate to Source leakage current IGSS VGS = ±30V, VDS = 0 Drain to Source breakdown voltage VDSS ID = 1mA, VGS = 0 500 Avalanche energy capacity EAS* L = 2mH, ID = 13A, VDD = 50V 170 Gate threshold voltage Vth VDS = 25V, ID = 1mA Drain to Source ON-resistance RDS(on) VGS = 10V, ID = 7A Forward transfer admittance | Yfs | VDS = 25V, ID = 7A typ VDS = 400V, VGS = 0 Unit 0.1 mA ±1 µA V mJ 1 0.45 5 V 0.6 Ω S 1700 pF 300 pF Reverse transfer capacitance (Common Source) Crss 120 pF Turn-on time ton 100 ns Fall time tf 90 ns Turn-off time (delay time) td(off) 210 ns Output capacitance (Common Source) Coss VDS = 20V, VGS = 0, f = 1MHz VGS = 10V, ID = 7A VDD = 150V, RL = 21.4Ω 5 max 8 Input capacitance (Common Source) Ciss * min Drain to Source cut-off current Avalanche energy capacity test circuit L ID Gate PVS RGS VDS Drain C VDD Source 1 Power F-MOS FETs 2SK1610 | Yfs | ID 12 TC=25˚C 28 24 10V 8V VGS=15V 20 7V 16 12 6V 8 PD=120W 4 5V Forward transfer admittance |Yfs| (S) 32 0 VDS=25V TC=25˚C 10 8 6 4 2 0 0 4 8 12 16 20 24 0 Drain to source voltage VDS (V) 4 8 12 16 20 20 16 12 8 4 0 f=1MHz TC=25˚C Ciss 8 300 Crss 30 (1) 80 60 40 20 80 120 160 200 Non repetitive pulse TC=25˚C IDP 30 ID 10 t=1ms 3 DC 1 10ms 0.3 0.1 0.01 60 80 100 120 140 160 Ambient temperature Ta (˚C) 2 160 120 ton tf 80 0 8 4 12 16 20 24 28 32 Drain current ID (A) EAS Tj 300 (2) 40 td(off) 200 240 0.03 0 25 240 Area of safe operation (ASO) Drain current ID (A) 100 20 0 40 100 120 15 VDD=150V VGS=10V TC=25˚C Drain to source voltage VDS (V) (1) TC=Ta (2) Without heat sink (PD=2.5W) 10 40 0 PD Ta 20 5 280 10 10 160 Allowable power dissipation PD (W) Coss 100 Gate to source voltage VGS (V) 0 0 ton, tf, td(off) ID 1000 140 0.2 320 Switching time ton,tf,td(off) (ns) Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) Drain current ID (A) 24 6 0.4 Drain current ID (A) 3000 4 0.6 Ciss, Coss, Crss VDS VDS=25V TC=25˚C 2 0.8 0 10000 0 VGS=10V TC=25˚C 1.0 Drain current ID (A) ID VGS 32 28 1.2 24 1 3 10 30 100 300 1000 Drain to source voltage VDS (V) Avalanche energy capacity EAS (mJ) Drain current ID (A) RDS(on) ID Drain to source ON-resistance RDS(on) (Ω) ID VDS ID=13A VDD=50V 250 200 150 100 50 0 25 50 75 100 125 150 175 Junction temperature Tj (˚C)