2SK2538 Power F-MOS FETs 2SK2538 Silicon N-Channel Power F-MOS Unit : mm ■ Features 0.7±0.1 ■ Applications ● High-speed ø3.1±0.1 switching (switching mode regulator) high-frequency power amplification 14.0±0.5 ● For 2.7±0.2 4.2±0.2 secondary breakdown 16.7±0.3 ● No switching 5.5±0.2 ■ Absolute Maximum Ratings (Tc = 25˚C) Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current Rating VDSS 250 V DC ID ±2 A Pulse IDP ±4 A EAS * 10 mJ TC = 25˚C 30 PD 0.8±0.1 1.3±0.2 0.5 +0.2 -0.1 2.54±0.25 V ±30 Ta= 25˚C 1.4±0.1 Unit VGSS Avalanche energy capability Allowable power dissipation Symbol 4.0 ● High-speed 4.2±0.2 10.0±0.2 7.5±0.2 energy capability guaranteed Solder Dip ● Avalanche 5.08±0.5 1 2 3 1 : Gate 2 : Drain 3 : Source TO-220 Full Pack Package (a) W 2 Channel temperature Tch 150 ˚C Storage temperature Tstg –55 to +150 ˚C * L= 5mH, IL= 2A, VDD= 30V, 1 pulse ■ Electrical Characteristics (Tc = 25˚C) Parameter Symbol Drain-Source cut-off current IDSS Condition Min Typ VDS= 200V, VGS= 0 Max Unit 100 µA ±1 µA Gate-Source leakage current IGSS VGS=±30V, VDS = 0 Drain-Source breakdown voltage VDSS ID=1mA, VGS= 0 Gate threshold voltage Vth VDS=10V, ID=1mA Drain-Source ON-resistance RDS(on) VGS=10V, I D=1A Forward transadmittance | Yfs | VDS= 25V, ID=1A Diode forward voltage VDSF IDR= 2A, VGS = 0 Input capacitance Ciss Output capacitance Coss Feedback capacitance Turn-on time (delay time) Rise time tr Fall time tf Turn-off time (delay time) td(off) Channel-Case heat resistance Rth(ch-c) 4.17 ˚C/W Channel-Atmosphere heat resistance Rth(ch-a) 62.5 ˚C/W 250 V 1 1.2 0.5 5 V 2 Ω –1.6 V 1 S 220 pF 60 pF Crss 20 pF td(on) 10 ns VDD= 200V, ID= 2A 20 ns VGS=10V, R L=100Ω 45 ns VDS=10V, VGS= 0, f=1MHz 90 ns 2SK2538 Power F-MOS FETs Area of safe operation (ASO) PD – Ta 12 40 Non repetitive pulse TC=25˚C Allowable power dissipation PD (W) 30 10 IDP 3 t=1ms ID 1 t=10ms t=100ms 0.3 DC 0.1 VDD=30V ID=2A (1) TC=Ta (2) Without heat sink (PD=2.0W) Avalanche energy capability EAS (mJ) 100 (1) 30 20 10 0.03 1 3 10 30 100 300 0 1000 20 40 60 2 100 125 150 ID – VGS RDS(on) – ID VGS=10.0V 9.0V ID (A) 7.0V Drain current 6.5V 30W 2 6.0V VGS=10V 3 2 5.5V 1 1 5.0V 0 8 Drain voltage 12 VDS 16 20 0 (V) | Yfs | – ID 2 1 0 1 2 3 Drain current ID (A) 4 5 2 4 6 8 TC=100˚C 2 25˚C 1 0˚C 0 10 1 2 3 4 Gate-Source voltage VGS (V) Drain current ID (A) Ciss, Coss, Crss – VDS td(on), tr, tf, td(off) – ID 1000 120 300 100 Ciss 100 5 VDD=200V VGS=10V TC=25˚C f=1MHz TC=25˚C (ns) (S) VDS=25V TC=25˚C 3 td(off) 80 t Input capacitance, Output capacitance, Ciss, Coss, Crss (pF) Feedback capacitance 3 4 0 0 4 175 5 VDS=10V TC=25˚C 4 3 0 75 ID – VDS 5 0 50 Junction temperature Tj (˚C) 8.0V ID (A) 4 Ambient temperature Ta (˚C) Drain-Source ON-resistance RDS(on) (Ω) 4 Drain current 6 0 25 80 100 120 140 160 TC=25˚C | Yfs | 8 Drain-Source voltage VDS (V) 5 Forward transadmittance 10 (2) 0 0.01 30 Coss 10 Crss Switching time Drain current ID (A) EAS – Tj 60 tf 40 tr 20 3 1 td(on) 0 0 50 100 150 200 Drain-Source voltage VDS (V) 250 0 1 2 Drain current 3 ID 4 (A) 5 2SK2538 Power F-MOS FETs Rth – tP Thermal resistance Rth (˚C/W) 1000 Notes: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A(2W) and without heat sink (2) PT=10V × 1.0A(10W) and with a 100 × 100 × 2mm Al heat sink 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 Pulse width tP (s) 10 102 103 104