Power F-MOS FETs 2SK3123 Silicon N-Channel Power F-MOS FET ■ Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage unit: mm 5.0±0.1 18.0±0.5 Solder Dip ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply ■ Absolute Maximum Ratings (TC = 25°C) Ratings Unit Drain to Source breakdown voltage VDSS 60 V Gate to Source voltage VGSS ±20 V DC ID ±15 A Pulse IDP Drain current Symbol Avalanche energy capacity * Allowable power TC = 25°C dissipation Ta = 25°C EAS* ±30 A 11.25 mJ 15 PD 90˚ 2.5±0.2 ■ Applications Parameter 1.0 13.0±0.2 4.2±0.2 10.0±0.2 1.2±0.1 C1.0 2.25±0.2 0.65±0.1 1.05±0.1 0.35±0.1 0.55±0.1 0.55±0.1 C1.0 1 2 3 2.5±0.2 2.5±0.2 1: Gate 2: Drain 3: Source MT4 Type Package W 2 Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C L = 0.1mH, IL = 15A, 1 pulse ■ Electrical Characteristics (TC = 25°C) Parameter Symbol Conditions min Drain to Source cut-off current IDSS Gate to Source leakage current IGSS VGS = ±20V, VDS = 0 Drain to Source breakdown voltage VDSS ID = 1mA, VGS = 0 60 Gate threshold voltage Vth VDS = 10V, ID = 1mA 1 RDS(on)1 VGS = 10V, ID = 10A Drain to Source ON-resistance RDS(on)2 VGS = 4V, ID = 6A Forward transfer admittance | Yfs | VDS = 10V, ID = 10A Diode forward voltage VDSF IDR = 10A, VGS = 0 Input capacitance (Common Source) Ciss Output capacitance (Common Source) Coss typ VDS = 50V, VGS = 0 VDS = 10V, VGS = 0, f = 1MHz Reverse transfer capacitance (Common Source) Crss 7 max Unit 10 µA ±10 µA V 2.5 V 32 60 mΩ 42 80 mΩ 13 S −1.3 V 330 pF 290 pF 70 pF Turn-on time (delay time) td(on) Rise time tr VDD = 30V, ID = 10A 20 ns 150 ns Fall time tf VGS = 10V, RL = 3Ω Turn-off time (delay time) td(off) 500 ns 1350 ns Thermal resistance between channel and case Rth(ch-c) 8.33 °C/W Thermal resistance between channel and atmosphere Rth(ch-a) 62.5 °C/W 1