ETC 2SK2327

Power F-MOS FETs
2SK2327
Silicon N-Channel Power F-MOS FET
■ Features
● Avalanche energy capacity guaranteed
● High-speed switching
● Low ON-resistance
● No secondary breakdown
unit: mm
15.5±0.5
Drain to Source breakdown voltage
VDSS
600
V
Gate to Source voltage
VGSS
±30
V
DC
ID
±10
A
Pulse
IDP
±20
A
EAS*
100
mJ
Avalanche energy capacity
*
Allowable power
TC = 25°C
dissipation
Ta = 25°C
PD
100
18.6±0.5
2.0
5˚
1
Drain current
0.7±0.1
5.45±0.3
2
3
2.0
Unit
5˚
5˚
5.5±0.3
5.45±0.3
Ratings
3.3±0.3
0.7±0.1
Symbol
5˚
23.4
22.0±0.5
5˚
4.0
2.0±0.2
1.1±0.1
■ Absolute Maximum Ratings (TC = 25°C)
Parameter
5˚
26.5±0.5
2.0 1.2
● Contactless relay
● Diving circuit for a solenoid
● Driving circuit for a motor
● Control equipment
● Switching power supply
10.0
4.5
■ Applications
3.0±0.3
φ3.2±0.1
1: Gate
2: Drain
3: Source
TOP-3E Package
W
3
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
L = 2mH, IL = 10A, 1 pulse
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current
IDSS
VDS = 480V, VGS = 0
100
µA
Gate to Source leakage current
IGSS
VGS = ±30V, VDS = 0
±1
µA
Drain to Source breakdown voltage
VDSS
ID = 1mA, VGS = 0
Gate threshold voltage
Vth
VDS = 25V, ID = 1mA
Drain to Source ON-resistance
RDS(on)
VGS = 10V, ID = 5A
Forward transfer admittance
| Yfs |
VDS = 25V, ID = 5A
Diode forward voltage
VDSF
IDR = 10A, VGS = 0
Input capacitance (Common Source) Ciss
Output capacitance (Common Source)
Coss
VDS = 20V, VGS = 0, f = 1MHz
Reverse transfer capacitance (Common Source) Crss
600
V
2
0.6
3.6
5
V
0.75
Ω
6
S
−1.7
V
2000
pF
210
pF
70
pF
30
ns
40
ns
60
ns
195
ns
Turn-on time (delay time)
td(on)
Rise time
tr
VDD = 200V, ID = 5A
Fall time
tf
VGS = 10V, RL = 40Ω
Turn-off time (delay time)
td(off)
Thermal resistance between channel and case
Rth(ch-c)
1.25
°C/W
Thermal resistance between channel and atmosphere
Rth(ch-a)
41.67
°C/W
1
Power F-MOS FETs
2SK2327
PD  Ta
Area of safe operation (ASO)
120
Drain current ID (A)
IDP
Allowable power dissipation PD (W)
Non repetitive pulse
TC=25˚C
t=100µs
1ms
10
ID
10ms
1
100ms
DC
0.1
100
(1) TC=Ta
(2) Without heat sink
(PD=3W)
100
Avalanche current IAS (A)
100
IAS  L-load
80
(1)
60
40
20
TC=25˚C
30
10
100mJ
3
1
0.3
(2)
3
10
30
100
300
1000
0
40
20
Drain to source voltage VDS (V)
Drain to source ON-resistance RDS(on) (Ω)
Drain current ID (A)
10
8
6
4
2
0
4
6
0.3
8
10
Gate to source voltage VGS (V)
1
3
10
L-load (mH)
RDS(on)  ID
VDS=25V
TC=25˚C
2
80 100 120 140 160
Ambient temperature Ta (˚C)
ID  VGS
12
0
60
| Yfs |  ID
1.2
12
VGS=10V
Forward transfer admittance |Yfs| (S)
1
2
0.1
0.1
0
0.01
TC=100˚C
1.0
0.8
25˚C
0.6
0˚C
0.4
0.2
0
VDS=25V
TC=25˚C
10
8
6
4
2
0
0
2
4
6
8
10
Drain current ID (A)
12
0
2
4
6
8
10
Drain current ID (A)
12