VLMSY3420 www.vishay.com Vishay Semiconductors Bicolor SMD LED PLCC-4 FEATURES • • • • • • 19211 • • • DESCRIPTION These devices have been designed to meet the increasing demand for surface mounting technology. • • The package of the VLMSY3420 is the PLCC-4. It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled up with clear epoxy. • • This SMD device consists of a red and yellow chip. So it is possible to choose the color in one device. • • PRODUCT GROUP AND PACKAGE DATA • Product group: LED SMD LED with exceptional brightness Multicolored Luminous intensity categorized EIA and ICE standard package Compatible with automatic placement equipment Compatible with IR reflow, vapor phase and wave soldering processes according to CECC 00802 and J-STD-020 Available in 8 mm tape Low profile package Non-diffused lens: excellent for coupling to light pipes and backlighting Low power consumption Luminous intensity ratio in one packaging unit IVmax./IVmin. ≤ 1.6 Preconditioning according to JEDEC® level 4 ESD-withstand voltage: up to 2 kV according to JESD22-A114-B AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Package: SMD PLCC-4 • Automotive: backlighting in dashboards and switches • Telecommunication: indicator and backlighting in telephone and fax • Indicator and backlight in office equipment • Flat backlight for LCDs, switches, and symbols • General use • Product series: bicolor • Angle of half intensity: ± 60° PARTS TABLE PART VLMSY3420-GS08 VLMSY3420-GS08 VLMSY3420-GS18 VLMSY3420-GS18 COLOR Red Yellow Red Yellow LUMINOUS INTENSITY WAVELENGTH FORWARD VOLTAGE at IF at IF at IF (mcd) (nm) (V) (mA) (mA) (mA) MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX. 224 900 50 630 50 2.1 2.6 50 280 1120 50 581 588 594 50 2.1 2.6 50 224 900 50 630 50 2.1 2.6 50 280 1120 50 581 588 594 50 2.1 2.6 50 TECHNOLOGY AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) VLMSY3420 PARAMETER Reverse voltage per diode (1) DC forward current per diode Surge forward current per diode Power dissipation per diode Junction temperature Operating temperature range Storage temperature range Thermal resistance junction / ambient TEST CONDITION IR = 10 μA Tamb ≤ 65 °C Mounted on PC board (pad size > 16 mm2) 1 chip on 2 chips on SYMBOL VR IF IFSM PV Tj Tamb Tstg RthJA RthJA VALUE 5 50 0.1 130 125 -40 to +100 -40 to +100 480 650 UNIT V mA A mW °C °C °C K/W K/W Note (1) Driving the LED in reverse direction is suitable for short term application Rev. 1.5, 04-Dec-15 Document Number: 81305 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VLMSY3420 www.vishay.com Vishay Semiconductors OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) VLMSY3420, SUPER RED TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Luminous intensity PARAMETER IF = 50 mA VLMSY3420 IV 224 - 900 mcd Dominant wavelength IF = 50 mA λd - 630 - nm Peak wavelength IF = 50 mA λp - 643 - nm Angle of half intensity IF = 50 mA ϕ - ± 60 - deg Forward voltage IF = 50 mA VF - 2.1 2.6 V Reverse current VR = 5 V IR - - 10 μA VR = 0 V, f = 1 MHz Cj - 15 - pF Junction capacitance OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) VLMSY3420, YELLOW PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Luminous intensity IF = 50 mA VLMSY3420 IV 280 - 1120 mcd Dominant wavelength IF = 50 mA λd 581 588 594 nm Peak wavelength IF = 50 mA λp - 590 - nm deg Angle of half intensity IF = 50 mA ϕ - ± 60 - Forward voltage IF = 50 mA VF - 2.1 2.6 V Reverse current VR = 5 V IR - - 10 μA VR = 0 V, f = 1 MHz Cj - 15 - pF Junction capacitance LUMINOUS INTENSITY CLASSIFICATION AND GROUP COMPINATIONS VLMSY3420 RED S2 T1 T2 U1 U2 V1 224 mcd to 280 mcd 280 mcd to 355 mcd 355 mcd to 450 mcd 450 mcd to 560 mcd 560 mcd to 710 mcd 710 mcd to 900 mcd T1 280 mcd to 355 mcd T2 355 mcd to 450 mcd Y U1 E L 450 mcd to 560 mcd L U2 O 560 mcd to 710 mcd W V1 710 mcd to 900 mcd V2 900 mcd to 1120 mcd VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 VLMSY3420 Note • Luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of ± 11 % COLOR CLASSIFICATION DOMINANT WAVELENGTH (nm) GROUP YELLOW MIN. MAX. 1 581 584 2 583 586 3 585 588 4 587 590 5 589 592 6 591 594 Note • Wavelengths are tested at a current pulse duration of 25 ms. Rev. 1.5, 04-Dec-15 Document Number: 81305 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VLMSY3420 www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1.2 IV rel. - Relative Luminous Intensity IF - Forward Current (mA) 60 50 1 chip on 40 2 chips on 30 20 10 yellow 1.0 0.8 0.6 0.4 0.2 0 0 0 20087 20 40 60 80 100 120 540 Tamb - Ambient Temperature (°C) Fig. 1 - Forward Current vs. Ambient Temperature IV rel - Relative Luminous Intensity IF - Forward Current (A) 0.08 tp/T = 0.005 0.05 0.5 0.06 0.04 for one chip operation only 10-4 20085 10-3 10-2 10-1 100 101 10° 0.4 0.2 660 680 700 50° 0.8 60° 70° 90 IF - Forward Current (mA) 0.9 super red yellow 80 70 60 50 40 30 20 10 80° 0 1.5 0.2 640 λ - Wavelength (nm) 100 1.0 0.4 620 Fig. 5 - Relative Intensity vs. Wavelength 20° 40° 0.7 super red 17045_1 ϕ - Angular Displacement IV rel - Relative Luminous Intensity 640 0.6 30° 0 95 10319 Fig. 3 - Relative Luminous Intensity vs. Angular Displacement Rev. 1.5, 04-Dec-15 620 0.8 0.0 600 Fig. 2 - Forward Current vs. Pulse Duration 0° 1.0 102 tp - Pulse Length (s) 0.6 600 1.2 0.10 0.00 10-5 580 λ - Wavelength (nm) Fig. 4 - Relative Intensity vs. Wavelength 0.12 0.02 560 16008 20090 1.7 1.9 2.1 2.3 2.5 VF - Forward Voltage (V) Fig. 6 - Relative Forward Voltage vs. Ambient Temperature Document Number: 81305 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VLMSY3420 www.vishay.com Vishay Semiconductors 2.5 IV rel - RelativeLuminous Intensity IV rel - Relative Luminous Intensity 10 yellow 1 0.1 super red 2.0 1.5 1.0 0.5 0 - 50 0.01 1 10 100 IF - Forward Current (mA) 17018 IV rel - Relative Luminous Intensity 10 super red 1 0 0.01 1 10 100 IF - Forward Current (mA) 17042 yellow 2.0 1.5 1.0 0.5 0.0 - 50 17016 - 25 0 25 50 75 100 Tamb - Ambient Temperature (°C) Fig. 9 - Relative Luminous Intensity vs. Ambient Temperature Rev. 1.5, 04-Dec-15 50 75 100 yellow 4 2 0 -2 -4 -6 - 50 - 25 0 25 50 75 100 Tamb - Ambient Temperature (°C) Fig. 11 - Relative Luminous Intensity vs. Ambient Temperature Δλd - Change of Dom. Wavelength (nm) IV rel - Relative Luminous Intensity 2.5 25 6 17017 Fig. 8 - Relative Luminous Intensity vs. Forward Current 0 Fig. 10 - Relative Luminous Intensity vs. Ambient Temperature Δλd - Change of Dom. Wavelength (nm) Fig. 7 - Relative Luminous Intensity vs. Forward Current - 25 Tamb - Ambient Temperature (°C) 20089 3 super red 2 1 0 -1 -2 -3 -4 -5 - 50 20088 - 25 0 25 50 75 100 Tamb - Ambient Temperature (°C) Fig. 12 - Change of Dominant Wavelength vs. Ambient Temperature Document Number: 81305 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VLMSY3420 Vishay Semiconductors 250 VF - Change of Forward Voltage (mV) Δ VF - Change of Forward Voltage (mV) www.vishay.com 30 mA 200 50 mA yellow 150 100 50 0 10 mA - 50 - 100 - 150 - 200 - 50 17015 - 25 0 25 50 75 100 Tamb - Ambient Temperature (°C) 250 200 100 50 mA 50 0 10 mA - 50 - 100 - 150 - 200 - 50 17039_1 Fig. 13 - Change of Forward Voltage vs. Ambient Temperature super red 30 mA 150 - 25 0 25 50 75 100 Tamb - Ambient Temperature (°C) Fig. 14 - Change of Forward Voltage vs. Ambient Temperature PACKAGE DIMENSIONS in millimeters Mounting Pad Layout 4 0.5 4 2.6 (2.8) 1.2 1.6 (1.9) area covered with solder resist Dimensions: IR and Vaporphase (Wave Soldering) 19899 Rev. 1.5, 04-Dec-15 Document Number: 81305 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VLMSY3420 www.vishay.com Vishay Semiconductors METHOD OF TAPING / POLARITY AND TAPE AND REEL SMD LED (VLM.3-SERIES) Vishay’s LEDs in SMD packages are available in an antistatic 8 mm blister tape (in accordance with DIN IEC 40 (CO) 564) for automatic component insertion. The blister tape is a plastic strip with impressed component cavities, covered by a top tape. REEL PACKAGE DIMENSION IN MILLIMETERS FOR SMD LEDS, TAPE OPTION GS08 (= 1500 PCS.) 10.0 9.0 120° 4.5 3.5 Adhesive tape 2.5 1.5 Identification Label: Vishay type group tape code production code quantity Blister tape Component cavity 13.00 12.75 63.5 60.5 14.4 max. 180 178 94 8665 94 8670 Fig. 16 - Reel Dimensions - GS08 TAPING OF VLM.3... 3.5 3.1 REEL PACKAGE DIMENSION IN MILLIMETERS FOR SMD LEDS, TAPE OPTION GS18 (= 8000 PCS.) PREFERRED 2.2 2.0 5.75 5.25 3.6 3.4 4.0 3.6 8.3 7.7 4.5 3.5 1.85 1.65 1.6 1.4 4.1 3.9 4.1 3.9 10.4 8.4 120° 2.5 1.5 13.00 12.75 0.25 2.05 1.95 94 8668 Fig. 15 - Tape Dimensions in mm for PLCC-2 Identification Label: Vishay type group tape code production code quantity 62.5 60.0 321 329 14.4 max. 18857 Fig. 17 - Reel Dimensions - GS18 Rev. 1.5, 04-Dec-15 Document Number: 81305 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VLMSY3420 www.vishay.com Vishay Semiconductors SOLDERING PROFILE RECOMMENDED METHOD OF STORAGE IR Reflow Soldering Profile for lead (Pb)-free soldering Preconditioning acc. to JEDEC level 4 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 max. 30 s After more than 72 h under these conditions moisture content will be too high for reflow soldering. 150 max. 100 s max. 120 s In case of moisture absorption, the devices will recover to the former condition by drying under the following condition: 100 0 max. ramp down 6 °C/s max. ramp up 3 °C/s 0 • Storage temperature 10 °C to 30 °C • Storage humidity ≤ 60 % RH max. 200 50 Dry box storage is recommended as soon as the aluminum bag has been opened to prevent moisture absorption. The following conditions should be observed, if dry boxes are not available: 50 100 19470-7 150 Time (s) 200 250 300 max. 2 cycles allowed Fig. 18 - Vishay Lead (Pb)-free Reflow Soldering Profile (acc. to J-STD-020) 192 h at 40 °C + 5 °C / - 0 °C and < 5 % RH (dry air / nitrogen) or 96 h at 60 °C + 5 °C and < 5 % RH for all device containers or 24 h at 100 °C + 5 °C not suitable for reel or tubes. An EIA JEDEC standard JESD22-A112 level 4 label is included on all dry bags. TTW Soldering (acc. to CECC00802) 300 5s Temperature (°C) 250 235 °C to 260 °C first wave 200 2. After this bag is opened, devices that will be subjected to infrared reflow, vapor-phase reflow, or equivalent processing (peak package body temp. 260 °C) must be: 2a. Mounted within 72 hours at factory condition of < 30 °C / 60 % RH or 2b. Stored at ≤ 10 % RH ca. 2 K/s 100 2 K/s ca. 5 K/s 50 3. Devices require baking befor mounting if: Humidity Indicator Card is > 10 % when read at 23 °C ± 5 °C or 2a. or 2b. is not met. forced cooling 0 50 100 150 200 250 Time (s) 948626-1 4 1. Shelf life in sealed bag: 12 months at < 40 °C and < 90 % relative humidity (RH) 100 °C to 130 °C 0 LEVEL This bag contains MOISTURE-SENSITIVE DEVICES second full line: typical wave dotted line: process limits ca. 200 K/s 150 CAUTION lead temperature Fig. 19 - Double Wave Soldering of Opto Devices (all Packages) 4. If baking is required, devices may be baked for: 192 hours at 40 °C + 5 °C / - 0 °C and < 5 % RH (dry air / nitrogen) or 96 hours at 60 °C ± 5 °C and < 5 % RH for all device containers or 24 hours at 100 °C ± 5 °C not suitable for reels or tubes Bag Seal Date: (If blank, see barcode label) DRY PACKING Note: Level defined by EIA JEDEC Standard JESD22-A113 The reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage. Aluminum bag 22860 Example of JESD22-A112 level 4 label ESD PRECAUTION Label Reel 15973 FINAL PACKING Proper storage and handling procedures should be followed to prevent ESD damage to the devices especially when they are removed from the antistatic shielding bag. Electro-static sensitive devices warning labels are on the packaging. VISHAY SEMICONDUCTORS STANDARD BAR CODE LABELS The Vishay Semiconductors standard bar code labels are printed at final packing areas. The labels are on each packing unit and contain Vishay Semiconductors specific data. The sealed reel is packed into a cardboard box. A secondary cardboard box is used for shipping purposes. Rev. 1.5, 04-Dec-15 Document Number: 81305 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000