Schottky Barrier Diodes (SBD) MA2S728 Silicon epitaxial planar type Unit : mm 0.80 − 0.03 + 0.05 0.30 ± 0.05 For switching circuits 2 + 0.05 + 0.05 0.12 − 0.02 +0 0 − 0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter 1 0.01 ± 0.01 • Super-small SS-mini type 2-pin package • Allowing high-density mounting • Low forward rise voltage (VF) and satisfactory wave detection efficiency (η) • Small temperature coefficient of forward characteristic • Extremely low reverse current IR 0.60 − 0.03 ■ Features + 0.05 1.20 − 0.03 Symbol Rating Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30 V Peak forward current IFM 150 mA Forward current (DC) IF 30 mA 1.60 ± 0.05 1 : Anode 2 : Cathode SS-Mini Type Package (2-pin) Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Marking Symbol: B ■ Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol Max Unit IR VR = 30 V Conditions Min Typ 300 nA VF1 IF = 1 mA 0.4 V VF2 IF = 30 mA 1 V Terminal capacitance Ct VR = 1 V, f = 1 MHz 1.5 pF Reverse recovery time* trr IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω 1 ns Detection efficiency η Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ , CL = 10 pF 65 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω 1 MA2S728 Schottky Barrier Diodes (SBD) IF V F 103 1.6 1.4 75°C 25°C 10 1 10–1 1.2 1.0 0.8 IF = 30 mA 0.6 0.4 0 0.2 0.4 0.6 0.8 1.0 0 −40 1.2 Forward voltage VF (V) Ta = 125°C 10 75°C 1 25°C 10−1 3 mA 0.2 10–2 Reverse current IR (µA) 102 − 20°C Ta = 125°C Forward voltage VF (V) 102 Forward current IF (mA) IR VR VF Ta 103 1 mA 10−2 0 40 80 120 160 200 0 Ct VR 5 IR T a 3.0 10 15 20 25 30 Reverse voltage VR (V) Ambient temperature Ta (°C) IF(surge) tW 1 000 1 000 100 2.0 1.5 1.0 0 5 10 15 20 25 Reverse voltage VR (V) 2 VR = 30 V 10 V 1V 10 1 0.1 0.5 0 Forward surge current IF(surge) (A) 2.5 Reverse current IR (µA) Terminal capacitance Ct (pF) Ta = 25°C 30 0.01 −40 0 40 80 120 160 Ambient temperature Ta (°C) 200 300 IF(surge) tW 100 30 10 3 1 0.3 0.1 0.03 0.1 0.3 1 3 10 Pulse width tW (ms) 30