Schottky Barrier Diodes (SBD) MA2Z720 Silicon epitaxial planar type Unit : mm 1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Reverse voltage (DC) VR 40 V Peak reverse voltage VRM 40 V Average forward current IF(AV) 500 mA Non-repetitive peak forward surge current* IFSM 2 A Junction temperature Tj 125 °C Storage temperature Tstg −55 to +150 °C 0.7 ± 0.1 + 0.1 0.16 − 0.06 2 1.25 ± 0.1 • Sealed in S-mini type 2-pin package • Allowing to rectify under (IF(AV) = 500 mA) condition • Allowing high-density mounting 0.3 0.5 ± 0.1 ■ Features 0.625 For high-frequency rectification 0.4 ± 0.1 1.7 ± 0.1 0.4 ± 0.1 2.5 ± 0.2 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 2L Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit 100 µA Reverse current (DC) IR VR = 35 V Forward voltage (DC) VF IF = 500 mA Terminal capacitance Ct VR = 0 V, f = 1 MHz 60 pF Reverse recovery time* trr IF = IR = 100 mA, Irr = 0.1 IR, RL = 100 Ω 5 ns 0.55 V Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and leakage of current from the equipment used. 2. Rated input/output frequency: 400 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 · IR IF = 100 mA IR = 100 mA RL = 100 Ω 1 MA2Z720 Schottky Barrier Diodes (SBD) IF V F Ct VR IR V R 10−1 10 100 Ta = 25°C 75°C 25°C 10−1 − 20°C 10−2 10−3 2 75°C 10−4 25°C 10−5 10−4 10−5 10−3 Terminal capacitance Ct (pF) 10−2 Ta = 125°C Reverse current IR (A) Forward current IF (A) 1 Ta = 125°C 0 0.1 0.2 0.3 0.4 0.5 Forward voltage VF (V) 0.6 10−6 0 10 20 30 40 50 Reverse voltage VR (V) 60 80 60 40 20 0 0 10 20 30 40 50 Reverse voltage VR (V) 60