TO-220F 10A Triac TM1041S-L, TM1061S-L ■ Features External Dimensions ) ●Isolation voltage: VISO=1500V(50Hz Sine wave, RMS) 13.0 min ●UL approved type available 4.2± 2.8 10.0±0.2 0.2 C 0.5 4.0±0.2 3.9±0.2 0.8±0.2 16.9±0.3 8.4±0.2 ●RMS on-state current: IT(RMS)=10A ●Gate trigger current: IGT=30mA max (MODE , , φ 3.3±0.2 (Unit: mm) ●Repetitive peak off-state voltage: VDRM=400, 600V a b 1.35±0.15 1.35±0.15 +0.2 0.85 – 0.1 2.54 2.54 2.2±0.2 2.4± +0.2 0.45 – 0.1 (1). Terminal 1 (T1) (2). Terminal 2 (T2) (3). Gate (G) (1) (2) (3) 0.2 a. Part Number b. Lot Number Weight: Approx. 2.1g ■Absolute Maximum Ratings Parameter Symbol Ratings TM1041S-L TM1061S-L 400 600 Unit Conditions Repetitive peak off-state voltage VDRM RMS on-state current IT(RMS) 10.0 A Conduction angle 360°, Tc=90°C Surge on-state current ITSM 100 A 50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C Peak gate voltage VGM 10 V Peak gate current IGM 2 A Peak gate power loss PGM 5 W Average gate power loss V PG(AV) 0.5 W Junction temperature Tj – 40 to +125 °C Storage temperature Tstg – 40 to +125 °C Isolation voltage VISO 1500 Vrms 50Hz Sine wave, RMS, Terminal to Case, 1 min. ■Electrical Characteristics Parameter Symbol Off-state current IDRM On-state voltage VTM (Tj=25°C, unless otherwise specified) Ratings min typ max 0.3 2.0 0.1 1.6 0.8 Gate trigger voltage VGT Unit Conditions mA VD=VDRM, RGK=∞, Tj=25°C V VD=VDRM, RGK=∞, Tj=125°C Pulse test, ITM=14A 0.7 2.0 0.8 2.0 V VD=6V, RL=10Ω, TC=25°C Gate trigger current 13 IGT 15 Holding current Thermal resistance 40 VGD IH Rth – – – – + + + T2 , G T2 , G T2 , G 30 30 30 mA VD=6V, RL=10Ω, TC=25°C + – – – – + T2 , G T2 , G T2 , G 30 Gate non-trigger voltage + + T2 , G 0.9 10 + T2 , G 2.0 V 0.2 mA 15 3.3 °C/W VD=1/2×VDRM, Tj=125°C VD=6V Junction to case TM1041S-L, TM1061S-L Gate Characteristics 5 Tj=25°C 1 0.5 80 60 6 3.0 3.5 IT(RMS) – Tc Ratings 6 4 2 75 50 25 4 6 8 10 12 0 RMS on-state current IT(RMS) (A) 2 4 6 8 10 0 0.5 1.5 10 2 10 0.5 0.5 1 10 2 10 1.5 2.0 2.5 10 5 0.2 0.5 1 10 2 10 103 25 50 75 100 1.5 125 100 125 1.0 0.5 0.5 1 10 2 10 103 (T2–, G– ) (T2+, G– ) (T2+, G+ ) 10 5 1 –40 10 5 1 0.5 0.2 0.5 1 0 25 50 75 10 2 10 100 Junction temperature Tj (°C) 125 103 t w (µs) Transient thermal resistance Characteristics 100 rth (°C/W) MODE MODE MODE igt Tj= – 40°C tw –20°C 0°C 25°C 50°C 75°C 100°C 125°C Transient thermal resistance 0.2 0 100 Gate trigger current IGT (mA) 0.4 75 Tj= – 40°C vgt –20°C 0°C tw 25°C 50°C 75°C 100°C 125°C Pulse width (VD=6V, RL=10Ω) 50 Junction temperature Tj (°C) 2.0 t w (µs) (Typical) 0.6 50 ) 1 0.5 Pulse width 0.8 ( Tj= – 40°C tw –20°C 0°C 25°C 50°C 75°C 100°C 125°C IGT temperature characteristics 1.0 25 (MODE – ) gate trigger IGT DC current at 25°C ( 103 (T2–,G– ) (T2+,G+ ) (T2+,G– ) 0 Junction temperature Tj (°C) 30 (Typical) MODE MODE MODE 2 –40 Pulse width tw (µs) VGT temperature characteristics 1.2 5 3.0 103 igt t w (µs) (VD=6V, RL=10Ω) + ( T2 – T1 ) (MODE – ) 1.0 ) gate trigger IGT DC current at 25°C ( 0.2 0.5 1 – igt (Typical) trigger current igt (Gate ) at Tj and tw 1 0.5 Pulse width 0 –40 1.0 trigger current igt (Gate ) at Tj and tw v ) ( ) 5 – 10 (MODE – ) Tj= – 40°C tw –20°C 0°C 25°C 50°C 75°C 100°C 125°C 10 + 25 30 igt (VD=30V, RGK=∞) (T2 – T1 ) Pulse width tw (µs) 30 i 50 Tj= – 40°C vgt –20°C 0°C tw 25°C 50°C 75°C 100°C 125°C (MODE – ) gate trigger IGT DC current at 25°C 75 trigger voltage vgt ( Gate ) at Tj and tw ) ( gate trigger VGT DC voltage at 25°C trigger voltage vgt ( Gate ) at Tj and tw ) ) ( gate trigger VGT DC voltage at 25°C gt Gate trigger voltage at Tj and tw ( 103 Pulse trigger temperature Characteristics 3 50 100 RMS on-state current IT(RMS) (A) Pulse width tw (µs) gt Gate trigger current at Tj and tw 125 (MODE – ) 10 2 10 (Typical) 2.0 1.0 0.5 0.5 1 2 vgt (Typical) Tj= – 40°C vgt –20°C 0°C tw 25°C 50°C 75°C 100°C 125°C 1.5 20 40 60 80 iGF (A) 100 0 12 (MODE – ) 2.0 0 Gate trigger current IGT (mA) IH temperature Characteristics Full-cycle sinewave Conduction angle : 360° Self-supporting Natural cooling No wind RMS on-state current IT(RMS) (A) Pulse trigger temperature Characteristics 0 1 Gate current 150 100 0 2 0 100 Full-cycle sinewave Conduction angle :360° Case temperature TC (°C) 8 0 50 IT(RMS) – Ta Ratings 125 10 0 10 150 Full-cycle sinewave Conduction angle :360° 12 5 Number of cycle 14 1 0 1 Holding current IH (mA) 2.5 vT ( V ) ) 2.0 2 See graph at the upper right 2 ( 1.5 3 4 40 gate trigger VGT DC voltage at 25°C 1.0 IT(RMS) – PT(AV) Characteristics Gate trigger voltage VGT (V) 8 20 0.5 On-state voltage Average on-state power PT(AV) (W) 100 Ambient temperature Ta (°C) 0.1 vGF (V) Tj=125°C 10 10 ms 1cycle Gate voltage Surge on-state current ITSM (A) 10 120 W =5 P GM On-state current iT (A) 50 Tj= –40°C Initial junction temperature Tj=125°C ITSM Tj=25°C 12 140 Tj= –20°C ITSM Ratings 100 Gate trigger voltage VGT (V) vT – iT Characteristics (max) Junction to operating environment 10 Junction to case 1 0.1 0.1 1 10 10 2 10 3 10 4 10 5 t, Time (ms) 41