SANKEN TM1262B-R

TO-3PF 12A Triac
TM1262B-R
■ Features
External Dimensions
5.5± 0.2
3.45± 0.2
5.5± 0.2
9.5± 0.2
●RMS on-state current: IT(RMS)=12A
a
b
3.35± 0.2
(16.2)
)
●Isolation voltage: VISO=2000V(AC, 1min.)
1.6
3.3
●Gate trigger current: IGT=8mA max (MODE , ,
23± 0.3
3.2± 0.2
(Unit: mm)
●Repetitive peak off-state voltage: VDRM=600V
+0.2
1.75–0.1
+0.2
2.15 –0.1
●For resistive load
●UL approved type available
+0.2
1.05–0.1
5.45± 0.1
5.45± 0.1
+0.2
0.65–0.1
15.6± 0.2
1.5 4.4 1.5
(1). Terminal 1 (T1)
(2). Terminal 2 (T2)
(3). Gate (G)
a. Part Number
b. Lot Number
Weight: Approx. 6.5g
(1) (2) (3)
■Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Repetitive peak off-state voltage
VDRM
600
V
RGK= ∞, Tj= –40°C to +125°C
RMS on-state current
IT(RMS)
12
A
Conduction angle 360°, Tc=98°C
Surge on-state current
ITSM
120
A
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C
Peak gate current
IGM
2
A
f
50Hz, duty
10%
Peak gate power loss
PGM
5
W
f
50Hz, duty
10%
PG(AV)
0.5
W
Junction temperature
Tj
– 40 to +125
°C
Storage temperature
Tstg
– 40 to +125
°C
Isolation voltage
VISO
2000
Vrms
Average gate power loss
Conditions
50Hz Sine wave, RMS, Terminal to Case, 1 min.
■Electrical Characteristics
Parameter
Symbol
Off-state current
IDRM
On-state voltage
VTM
Ratings
min
VGT
max
0.3
2.0
0.1
1.6
0.8
Gate trigger voltage
typ
0.4
0.4
1.1
0.6
0.7
Unit
mA
V
Conditions
VD=VDRM, RGK= ∞, Tj=125°C
VD=VDRM, RGK= ∞, Tj=25°C
ITM=16A, TC=25°C
+
1.2
1.2
V
VD=20V, RL=40Ω, TC=25°C
Gate trigger current
IGT
2.0
2.0
5.0
4.5
5.0
Holding current
Thermal resistance
60
VGD
IH
Rth
–
–
–
–
+
+
+
T2 , G
T2 , G
T2 , G
8.0
8.0
8.0
mA
VD=20V, RL=40Ω, TC=25°C
+
–
–
–
–
+
T2 , G
T2 , G
T2 , G
25
Gate non-trigger voltage
+
T2 , G
2.1
2.0
+
T2 , G
1.8
V
0.1
mA
6
2.0
°C/W
VD=1/2×VDRM, Tj=125°C
Tj=25°C
Junction to case
TM1262B-R
140
Surge on-state current ITSM (A)
Tj =125°C
10
Tj =25°C
1
Initial junction temperature
Tj=125°C
ITSM
120
10 ms
1cycle
100
80
60
40
20
5
vT ( V )
10
50
VGM =10V
10
PGM =5W
25°C VGT1=1.8V
– 40°C VGT1=2.2V
PG(AV) =0.5W
–40°C VGT2,3=1.5V
5
1
25°C
5 V =1.2V
GT2.3
25
0.1 VGD=0.1V
1
10
0
12
14
1.2
0.8
0.4
0
25
50
75
100
10
1
–40
0
25
50
75
100
Junction temperature Tj (°C)
125
1.2
0.8
0.4
0
25
50
75
100
125
Junction temperature Tj (°C)
(Typical)
10
5
1
(RG-K =1kΩ)
50
10
5
1
0.5
–40
0
25
50
75
100
125
0.5
–40
0
25
50
75
100
125
Junction temperature Tj (°C)
rth( j-c) – t Characteristics
Transient thermal resistance rth (j-c) (°C/W)
Latching current IL (mA)
100
(VD =20V RL =40 Ω)
1.6
iGF (mA)
(VD =20V RL =40 Ω)
50
12
2.0
0
–40
5000
Junction temperature Tj (°C)
(RG-K =∞)
1000
10
IH temperature characteristics
Junction temperature Tj (°C)
(Typical)
8
(Typical)
125
IL temperature characteristics
6
IGT temperature characteristics
Gate trigger current IGT (mA)
Gate trigger voltage VGT (V)
1.6
1000
Holding current IH (mA)
(VD =20V RL =40 Ω)
2.0
0
–40
100
Gate current
RMS on-state current IT(RMS) (A)
) temperature characteristics
4
Mode
IGM =2A
50
2
(Typical)
–40°C IGT=25mA
75
2.4
0
2.4
25°C IGT=8mA
vGF (V)
Gate voltage
Case temperature TC (°C)
100
(Typical)
2
Mode
125
VGT (Mode
4
VGT temperature characteristics
50
10
6
RMS on-state current IT(RMS) (A)
Full-cycle sinewave
Conduction angle :360°
8
8
100
Gate Characteristics
150
6
10
Number of cycle
IT(RMS) – Tc Ratings
4
12 Conduction angle :360°
0
1
2.0 2.4 2.8 3.2 3.6
On-state voltage
2
Full-cycle sinewave
0
0.1
0.4 0.8 1.2 1.6
0
14
Gate trigger voltage VGT (V)
iT (A)
On-state current
IT(RMS) – PT(AV) Characteristics
ITSM Ratings
100
Average on-state power PT(AV) (W)
vT – iT Characteristics (max)
5
1
0.5
1
10
102
103
104
105
t, Time (ms)
61