TO-220 8A Triac TM841M-L, TM861M-L ■ Features External Dimensions (Unit: mm) ) 12.0 min ●Gate trigger Current: IGT=30mA max (MODE , , 2.1max φ 3.75±0.1 a b ±0.15 1.35 4.0 max ●RMS on-state current: IT(RMS)=8A 5.0max 10.4max 16.7max 0.2 3.0± 8.8±0.2 ●Repetitive peak off-state voltage: VDRM=400, 600V +0.2 0.65 – 0.1 ±0.1 2.5 ±0.2 1.7 ±0.1 2.5 (1). Terminal 1 (T1) (2). Terminal 2 (T2) (3). Gate (G) (1) (2) (3) a. Part Number b. Lot Number Weight: Approx. 2.6g ■Absolute Maximum Ratings Parameter Symbol Ratings TM841M-L TM861M-L 600 Conditions Repetitive peak off-state voltage VDRM RMS on-state current IT(RMS) 8.0 A Conduction angle 360°, Tc=108°C Surge on-state current ITSM 80 A 50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C Peak gate voltage VGM 10 V Peak gate current IGM 2 A Peak gate power loss PGM 5 W Average gate power loss 400 Unit V PG(AV) 0.5 W Junction temperature Tj – 40 to +125 °C Storage temperature Tstg – 40 to +125 °C ■Electrical Characteristics Parameter Symbol Off-state current IDRM On-state voltage VTM (Tj=25°C, unless otherwise specified) Ratings min typ max 0.3 2.0 0.1 1.6 0.8 Gate trigger voltage 0.7 VGT 0.8 Unit Conditions mA VD=VDRM, RGK= ∞, Tj=25°C V VD=VDRM, RGK= ∞, Tj=125°C Pulse test, ITM=10A + 2.0 2.0 V VD=6V, RL=10Ω, TC=25°C Gate trigger current 10 IGT 12 Holding current Thermal resistance 36 VGD IH Rth – – – – + + + T2 , G T2 , G T2 , G 30 30 30 mA VD=6V, RL=10Ω, TC=25°C + – – – – + T2 , G T2 , G T2 , G 30 Gate non-trigger voltage + T2 , G 0.9 8 + T2 , G 2.0 V 0.2 mA 12 1.8 °C/W VD=1/2×VDRM, Tj=125°C VD=6V Junction to case TM841M-L, TM861M-L 40 20 6 2 1 0 0 Tj= –20°C Tj= –40°C vGF (V) 50Hz 3 20 40 60 80 Gate trigger current IGT (mA) W =5 1 60 8 M 5 10 10 ms 1cycle Gate voltage iT (A) 10 80 PG Surge on-state current ITSM (A) Tj=25°C Tj=125°C 12 Initial junction temperature Tj=125°C ITSM Tj=25°C 100 50 On-state current Gate Characteristics ITSM Ratings 100 Gate trigger voltage VGT (V) vT – iT Characteristics (max) 4 See graph at the upper right 2 0.5 0 2.0 3.0 On-state voltage 3.6 5 10 50 Case temperature TC (°C) 8 6 4 2 Ambient temperature Ta (°C) 125 10 100 75 50 25 2 4 6 8 0 10 RMS on-state current IT(RMS) (A) 2 4 6 8 100 10 75 50 1.5 2.0 2.5 trigger voltage vgt ( Gate ) at Tj and tw 1 0.1 0.5 1 10 2 10 103 10 4 0.1 0.5 1 10 2 10 ) 103 10 4 Gate trigger current IGT (mA) 0.6 0.4 0.2 0 25 50 75 100 Junction temperature Tj (°C) 125 (VD=6V, RL=10Ω) 24 20 MODE MODE MODE (T2–, G– ) (T2+, G– ) (T2+, G+ ) 10 0 –40 0 25 50 50% tw 1 0.1 0.5 1 75 10 2 10 Pulse width (Typical) 0.8 10 4 igt Tj= – 40°C – 20°C 25°C 75°C 125°C 10 t w (µs) IGT temperature characteristics 1.0 103 ( trigger current igt (Gate ) at Tj and tw 1 Pulse width (T2–,G– ) (T2+,G+ ) (T2+,G– ) gate trigger IGT DC current at 25°C 50% 100 Junction temperature Tj (°C) 125 103 10 4 t w (µs) Transient thermal resistance Characteristics 100 rth (°C/W) 10 4 tw Tj= – 40°C – 20°C 25°C 75°C 125°C 10 t w (µs) (VD=6V, RL=10Ω) 10 2 10 (MODE – ) igt (Typical) MODE MODE MODE 0.1 0.5 1 Pulse width tw (µs) VGT temperature characteristics 1.2 1 30 ) 103 125 50% Transient thermal resistance 10 2 10 Pulse width 100 tw Tj= – 40°C – 20°C 25°C 75°C 125°C ( Tj= – 40°C – 20°C 25°C 75°C 125°C ( trigger current igt (Gate ) at Tj and tw ( 1 75 igt (Typical) gate trigger IGT DC current at 25°C ) 50% tw 50 vgt 10 (MODE – ) Tj= – 40°C – 20°C 25°C 75°C 125°C 25 ) 50% 30 igt 0.1 0.5 1 0 Junction temperature Tj (°C) Pulse width tw (µs) 30 10 0 –40 3.0 (MODE – ) tw 10 (MODE – ) 0 –40 1.0 vgt ( 10 4 Pulse trigger temperature Characteristics gate trigger IGT DC current at 25°C 0.5 gate trigger VGT DC voltage at 25°C gate trigger VGT DC voltage at 25°C trigger voltage vgt ( Gate ) at Tj and tw trigger voltage vgt ( Gate ) at Tj and tw 1 103 + 30 ) ) Tj= – 40°C – 20°C 25°C 75°C 125°C ( gate trigger VGT DC voltage at 25°C 50% tw 10 2 – ( T2 – T1 ) (MODE – ) Pulse width tw (µs) trigger current igt (Gate ) at Tj and tw 0 30 vgt 10 – vgt (Typical) 30 10 + (T2 – T1 ) RMS on-state current IT(RMS) (A) (MODE – ) 0.1 0.5 1 10 25 RMS on-state current IT(RMS) (A) Pulse trigger temperature Characteristics (VD =30V) 20 125 0 0 3 (Typical) Full-cycle sinewave Conduction angle : 360° Self-supporting Natural cooling No wind Full-cycle sinewave Conduction angle :360° 0 2 iGF (A) IH temperature Characteristics 150 150 Full-cycle sinewave Conduction angle :360° 0 1 Gate current IT(RMS) – Ta Ratings IT(RMS) – Tc Ratings 12 Gate trigger voltage VGT (V) 0 100 Number of cycle IT(RMS) – PT(AV) Characteristics Average on-state power PT(AV) (W) 0 1 vT ( V ) Holding current IH (mA) 0.3 1.0 Junction to operating environment 10 Junction to case 1 0.1 0.1 1 10 10 2 10 3 10 4 10 5 t, Time (ms) 37