SANKEN TM1641B-L

TO-3PF 16A Triac
TM1641B-L, TM1661B-L
■ Features
External Dimensions
3.35± 0.2
1.6
3.3
a
b
+0.2
1.75–0.1
+0.2
2.15 –0.1
●Isolation voltage: VISO=2000V(AC, 1min.)
●UL approved type available
(16.2)
)
●Rate-of-rise of off-state commutation voltage: (dv/dt)c=10V/µs min.
23± 0.3
5.5± 0.2
9.5± 0.2
●RMS on-state current: IT(RMS)=16A
●Gate trigger current: IGT=30mA max (MODE , ,
5.5± 0.2
3.45± 0.2
3.2± 0.2
(Unit: mm)
●Repetitive peak off-state voltage: VDRM=400, 600V
+0.2
1.05–0.1
5.45± 0.1
5.45± 0.1
+0.2
0.65–0.1
15.6± 0.2
1.5 4.4 1.5
(1). Terminal 1 (T1)
(2). Terminal 2 (T2)
(3). Gate (G)
a. Part Number
b. Lot Number
Weight: Approx. 6.5g
(1) (2) (3)
■Absolute Maximum Ratings
Parameter
Symbol
Ratings
TM1641B-L
TM1661B-L
600
Conditions
Repetitive peak off-state voltage
VDRM
RMS on-state current
IT(RMS)
16
A
Conduction angle 360°, Tc=92.5°C
Surge on-state current
ITSM
160
A
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C
Peak gate voltage
VGM
10
V
f
50Hz, duty
10%
Peak gate current
IGM
2
A
f
50Hz, duty
10%
Peak gate power loss
PGM
5
W
f
50Hz, duty
10%
PG(AV)
0.5
W
Average gate power loss
400
Unit
V
Junction temperature
Tj
– 40 to +125
°C
Storage temperature
Tstg
– 40 to +125
°C
Isolation voltage
VISO
2000
Vrms
50Hz Sine wave, RMS, Terminal to Case, 1 min.
■Electrical Characteristics
Parameter
Symbol
Off-state current
IDRM
On-state voltage
VTM
Ratings
min
typ
max
0.1
2.0
Conditions
mA
VD=VDRM, RGK=∞, Tj=25°C
0.1
1.6
0.8
Gate trigger voltage
Unit
VGT
V
VD=VDRM, RGK=∞, Tj=125°C
ITM=20A, TC=25°C
0.7
1.5
0.8
1.5
V
VD=6V, RL=10Ω, TC=25°C
Gate trigger current
16
IGT
25
Holding current
Rate-of-rise of off-state commutation voltage
Thermal resistance
48
VGD
30
30
(dv/dt)c
Rth
–
–
–
+
+
+
T2 , G
mA
VD=6V, RL=10Ω, TC=25°C
+
–
–
–
–
+
T2 , G
T2 , G
T2 , G
V
0.2
mA
25
IH
–
T2 , G
T2 , G
30
70
Gate non-trigger voltage
+
+
T2 , G
1.0
12
+
T2 , G
1.5
10
1.8
VD=1/2×VDRM, Tj=125°C
Tj=25°C
V/µs
VD=400V, Tj=125°C
°C/W
Junction to case
TM1641B-L, TM1661B-L
ITSM Ratings
Surge on-state current ITSM (A)
Tj =125°C
10
Tj =25°C
1
Initial junction temperature
Tj=125°C
ITSM
160
10 ms
1cycle
140
120
100
80
60
40
20
0.1
0.4
0.8
1.2
1.6
2.0
On-state voltage
2.4
0
2.8
Full-cycle sinewave
Conduction angle :360°
16
12
8
4
0
1
5
vT ( V )
10
50
100
0
Number of cycle
IT(RMS) – Tc Ratings
(Typical)
50
PGM =5W
PG(AV) =0.5W
–40°C VGT=1.8V
25
IGM =2A
25°C VGT=1.5V
1
25°C IGT=30mA
50
VGM =10V
–40°C IGT=75mA
vGF (V)
Gate voltage
75
12
16
(VD =6V RL =10 Ω)
2.0
Mode
125
100
8
VGT temperature characteristics
Full-cycle sinewave
Conduction angle :360°
10
4
RMS on-state current IT(RMS) (A)
Gate Characteristics
150
Case temperature TC (°C)
20
Gate trigger voltage VGT (V)
iT (A)
On-state current
IT(RMS) – PT(AV) Characteristics
180
100
Average on-state power PT(AV) (W)
vT – iT Characteristics (max)
Mode
1.6
1.2
0.8
0.4
VGD=0.2V
0
0
4
8
12
16
0
20
1
RMS on-state current IT(RMS) (A)
10
100
Gate current
1000
0
–40 –25
5000
iGF (mA)
0
25
50
75
100
IGT temperature characteristics
IH temperature characteristics
IL temperature characteristics
(Typical)
(Typical)
(Typical)
(VD =6V RL =10 Ω)
(RG-K =1kΩ)
1000
Mode
(RG-K = ∞ )
1000
10
5
1
–40 –25
0
25
50
75
100
125
Junction temperature Tj (°C)
Latching current IL (mA)
50
Holding current IH (mA)
Gate trigger current IGT (mA)
100
125
Junction temperature Tj (°C)
100
10
1
–40 –25
0
25
50
75
100
Junction temperature Tj (°C)
125
100
10
1
–40 –25
0
25
50
75
100
125
Junction temperature Tj (°C)
Transient thermal resistance rth (j-c) (°C/W)
rth( j-c) – t Characteristics
5
1
0.5
1
10
102
103
104
105
t, Time (ms)
49