TSM020N03PQ56 30V N-Channel MOSFET PDFN56 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS 30 V RDS(on) (max) VGS = 10V 2 VGS = 4.5V 3 Qg 82 nC Block Diagram d Features de Low On-Resistance Low Input Capacitance Low Gate Charge Ordering Information Part No. Package Packing en ● ● ● mΩ mm TSM020N03PQ56 RLG PDFN56 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. N-Channel MOSFET Parameter Drain-Source Voltage tR Gate-Source Voltage e co Absolute Maximum Ratings (TC=25oC unless otherwise noted) Continuous Drain Current Drain Current-Pulsed (Note 3) TC=25°C TA=25°C (Note 1) , No Single Pulse Avalanche Energy L=0.1mH Maximum Power Dissipation (Note 2) TC=25°C TA=25°C Storage Temperature Range Operating Junction Temperature Range Symbol Limit Unit VDS 30 V VGS ±20 V ID 130 A 38 IDM 500 A EAS 151 mJ PD 83 W 3.6 TSTG -55 to +150 °C TJ -55 to +150 °C Symbol Limit Thermal Performance Parameter Thermal Resistance - Junction to Case RӨJC Thermal Resistance - Junction to Ambient RӨJA 1/6 Unit 1.5 o 35 o C/W C/W Version: A14 TSM020N03PQ56 30V N-Channel MOSFET Electrical Specifications (TJ=25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit BVDSS 30 -- -- V -- 1.5 2 -- 2.3 3 1.2 -- 2.5 Static Drain-Source On-State Resistance VGS = 0V, ID = 250µA VGS = 10V, ID = 30A VGS = 4.5V, ID = 15A RDS(ON) VDS = VGS, ID = 250µA VGS(TH) Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V IDSS Gate Body Leakage VGS = ±20V, VDS = 0V IGSS Dynamic Total Gate Charge Qg Gate-Source Charge VGS = 10V Gate-Drain Charge VDS = 15V, VGS = 0V, Output Capacitance f = 1.0MHz Reverse Transfer Capacitance Switching Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time e co Turn-On Delay Time 1 µA -- -- ±100 nA -- 82 -- Qgs -- 24 -- Qgd -- 5 -- Ciss -- 4222 -- Coss -- 889 -- Crss -- 398 -- td(on) -- 22 -- tr -- 7 -- td(off) -- 100 -- tf -- 18 -- VSD -- -- 1.3 V tfr -- 32 -- ns mm Input Capacitance -- en VDD = 15V, ID = 30A, VGS = 10V, VDS = 15V, RG = 3Ω, ID = 30A V -- de Gate Threshold Voltage mΩ d Drain-Source Breakdown Voltage nC pF ns tR Drain-Source Diode Characteristics and Maximum Rating Drain-Source Diode Forward Voltage Reverse Recovery Time VGS=0V, IS=30A IS = 30A, dI/dt = 100A/µs No Reverse Recovery Charge Qrr -120 -nC Notes: 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 2. RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air. 3. The maximum current rating is limited by package. 2/6 Version: A14 TSM020N03PQ56 30V N-Channel MOSFET Electrical Characteristics Curves Output Characteristics Gate Threshold Voltage Drain-Source On Resistance No tR e co mm Gate Source On Resistance en de d IDS=250µA Source-Drain Diode Forward Voltage Drain-Source On-Resistance 3/6 Version: A14 TSM020N03PQ56 30V N-Channel MOSFET Electrical Characteristics Curves Drain Current vs. Junction Temperature mm Transient Thermal Impedance No tR e co Safe Operation Area en de d Power Derating Gate Charge Capacitance 4/6 Version: A14 TSM020N03PQ56 30V N-Channel MOSFET Marking Diagram Unit: Millimeters e co mm en de d PDFN56 Mechanical Drawing No tR Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 5/6 Version: A14 TSM020N03PQ56 No tR e co mm en de d 30V N-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: A14