TSM028N04PQ56 40V N-Channel MOSFET PDFN56 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS 40 V RDS(on)(max) 2.8 mΩ Qg 78 nC Features ● ● ● Block Diagram Low On-Resistance Low Input Capacitance Low Gate Charge Ordering Information Part No. Package Packing TSM028N04PQ56 RLG PDFN56 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. N-Channel MOSFET Absolute Maximum Ratings (TC=25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current Drain Current-Pulsed TC=25°C (Note 3) TA=25°C (Note 1) , Single Pulse Avalanche Energy L=0.1mH Maximum Power Dissipation (Note 2) TC=25°C TA=25°C Storage Temperature Range Operating Junction Temperature Range ID 140 A 42 IDM 550 A EAS 201 mJ PD 83 W 4.4 TSTG -55 to +150 °C TJ -55 to +150 °C Symbol Limit Unit RӨJC 1.5 o 28 o Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient RӨJA 1/6 C/W C/W Version: A14 TSM028N04PQ56 40V N-Channel MOSFET Electrical Specifications (TJ=25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 40 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 30A RDS(ON) -- 2.1 2.8 mΩ Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2 3 4 V Zero Gate Voltage Drain Current VDS = 32V, VGS = 0V IDSS -- -- 1 µA Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Qg -- 78 -- Qgs -- 22 -- Qgd -- 4.7 -- Ciss -- 4222 -- Coss -- 889 -- Crss -- 398 -- td(on) -- 21 -- tr -- 6 -- td(off) -- 98 -- tf -- 17 -- VSD -- -- 1.3 V tfr -- 32 -- ns Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 20V, ID = 30A, VGS = 10V Input Capacitance Output Capacitance VDS = 20V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance nC pF Switching Turn-On Delay Time Turn-On Rise Time VGS = 10V, VDD = 20V, Turn-Off Delay Time RG = 3Ω, ID = 13A Turn-Off Fall Time ns Drain-Source Diode Characteristics and Maximum Rating Drain-Source Diode Forward Voltage Reverse Recovery Time VGS=0V, IS=30A IS = 30A, dI/dt = 100A/µs Reverse Recovery Charge Qfr -120 -nC Notes: 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 2. RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air. 3. The maximum current rating is limited by package. 2/6 Version: A14 TSM028N04PQ56 40V N-Channel MOSFET Electrical Characteristics Curves Output Characteristics Gate Threshold Voltage IDS=250µA Gate Source On Resistance Drain-Source On Resistance Drain-Source On-Resistance Source-Drain Diode Forward Voltage 3/6 Version: A14 TSM028N04PQ56 40V N-Channel MOSFET Electrical Characteristics Curves Power Derating Drain Current vs. Junction Temperature Safe Operation Area Transient Thermal Impedance Capacitance Gate Charge 4/6 Version: A14 TSM028N04PQ56 40V N-Channel MOSFET PDFN56 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 5/6 Version: A14 TSM028N04PQ56 40V N-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: A14