TSM35N03PQ56 30V N-Channel Power MOSFET PDFN 5x6 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS (V) 30 7 @ VGS =10V 12 9 @ VGS =4.5V 10 Block Diagram de Advanced Trench Technology Low On-Resistance Low gate charge typical @ 8.2nC (Typ.) Low Crss typical @ 90pF (Typ.) Ordering Information en ● ● ● ● ID (A) d Features RDS(on)(mΩ) Package Packing PDFN56 2.5Kpcs / 13” Reel mm Part No. TSM35N03PQ56 RLG e co Note: “G” denote for Halogen Free Product N-Channel MOSFET Absolute Maximum Ratings (Ta = 25oC unless otherwise noted) Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±25 V tR Parameter No Continuous Drain Current TC=25°C TC=70°C TA=25°C 35 ID TA=70°C 35 A 22 18 Drain Current-Pulsed Note 1 IDM 60 A Avalanche Current, L=0.5mH IAS, IAR 26 A Avalanche Energy, L=0.5mH EAS, EAR 33 mJ Maximum Power Dissipation TC=25°C TC=70°C TA=25°C 35 PD TA=70°C Storage Temperature Range Operating Junction Temperature Range 23 W 4.2 2.7 TSTG -55 to +150 °C TJ -55 to +150 °C Symbol Limit * Limited by maximum junction temperature Thermal Performance Parameter Thermal Resistance - Junction to Case RӨJC Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec RӨJA 1/4 Unit 3.5 o C/W 30 o C/W Version: B14 TSM35N03PQ56 30V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit BVDSS 30 -- -- V -- 5.5 7 -- 7.5 9 Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance VGS = 0V, ID = 250µA VGS = 10V, ID = 12A RDS(ON) VGS = 4.5V, ID = 10A mΩ VDS = VGS, ID = 250µA VGS(TH) 1.3 -- 2.5 V Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V IDSS -- -- 1 µA Gate Body Leakage VGS = ±25V, VDS = 0V nA Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Turn-On Delay Time VDS = 15V, VGS = 0V, f = 1.0MHz VGS = 10V, VDS = 15V, e co Turn-On Rise Time VGS = 4.5V Turn-Off Delay Time -- -- ±100 Qg -- 8.2 -- Qgs -- 2.7 -- en Gate-Source Charge VDS = 15V, ID = 16A, IGSS RG = 1Ω Turn-Off Fall Time nC Qgd -- 2.2 -- Ciss -- 1050 -- Coss -- 210 -- Crss -- 90 -- td(on) -- 9 -- tr -- 9 -- td(off) -- 20 -- tf -- 7 -- VSD -- 0.75 1.3 V tfr -- 22 -- ns mm Total Gate Charge de Dynamic d Gate Threshold Voltage pF ns Drain-Source Diode Characteristics and Maximum Rating VGS=0V, IS=2.3A Reverse Recovery Time IS = 3.2A, TJ=25 C tR Drain-Source Diode Forward Voltage o No dI/dt = 100A/µs Reverse Recovery Charge Qfr -14 -nC Notes: 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 2. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. RθJA shown below for single device operation on FR-4 in still air 3. The maximum current rating is limited by package. 2/4 Version: B14 TSM35N03PQ56 30V N-Channel Power MOSFET Unit: Millimeters No tR e co mm en de d PDFN56 Mechanical Drawing 3/4 Version: B14 TSM35N03PQ56 No tR e co mm en de d 30V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: B14