[ /Title (RFM10 N45, RFM10 N50) /Subject (10A, 450V and 500V, 0.600 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdfmark RFM10N45, RFM10N50 Semiconductor 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 10A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • rDS(ON) = 0.600Ω Ordering Information PART NUMBER PACKAGE BRAND RFM10N45 TO-204AA RFM10N45 RFM10N50 TO-204AA RFM10N50 Formerly developmental type TA17435. Symbol NOTE: When ordering, include the entire part number. D G S Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) [ /PageMode CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 5-1 File Number 1788.1 RFM10N45, RFM10N50 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 1MΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL RFM10N45 450 450 10 20 ±20 150 1.2 -55 to 150 RFM10N50 500 500 10 20 ±20 150 1.2 -55 to 150 UNITS V V A A V W W/oC oC 260 260 oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER MIN TYP MAX UNITS RFM10N45 450 - - V RFM10M50 500 - - V 2.0 - 4.0 V VDS = Rated BVDSS, VGS = 0V - - 1 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC - - 25 µA VGS = ±20V, VDS = 0V - - ±100 nA - - 0.600 Ω 6.0 V Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current SYMBOL BVDSS VGS(TH) IDSS IGSS TEST CONDITIONS VGS = 0V, ID = 250µA VGS = VDS, ID = 250µA, (Figure 8) Drain to Source On Resistance (Note 2) rDS(ON) VGS = 10V, ID = 10A, (Figures 6, 7) Drain to Source On Voltage (Note 2) VDS(ON) VGS = 10V, ID = 10A Turn-On Delay Time Rise Time td(ON) - 26 60 ns - 50 100 ns td(OFF) - 525 900 ns tf - 105 180 ns - - 3000 pF pF tr Turn-Off Delay Time Fall Time VDS = 250, ID ≈ 5A, VGS = 10V, RG = 50Ω, RL = 50Ω, (Figures 10, 11, 12) Input Capacitance CISS Output Capacitance COSS - - 600 Reverse Transfer Capacitance CRSS - - 200 pF 0.83 oC/W Thermal Impedance Junction to Case VGS = 0V, VDS = 25V, f = 1.0MHz, (Figure 9) RθJC - - Source to Drain Diode Specifications PARAMETER SYMBOL Source to Drain Diode Voltage (Note 2) VSD Reverse Recovery Time trr TEST CONDITIONS MIN TYP MAX UNITS ISD = 5A - - 1.4 V ISD = 4A, dISD/dt = 100A/µs - 950 - ns NOTE: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. 5-2 RFM10N45, RFM10N50 Unless Otherwise Specified 1.2 12 1.0 10 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER Typical Performance Curves 0.8 0.6 0.4 8 6 4 2 0.2 0 25 0.0 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 150 75 100 125 TC, CASE TEMPERATURE (oC) 24 TJ = MAX RATED, TC = 25oC PULSE DURATION = 80µs DUTY CYCLE ≤ 2% 10V, 8V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 20 ID MAX CONTINUOUS 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 100 50 VDSS (MAX) = 450V (RFM10N45) 4.5V 16 12 VGS = 4.0V 8 4 DC VDSS (MAX) = 500V (RFM10N50) 6.0V 5.0V 3.5V 3.0V 0.1 102 1 0 103 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 24 1.2 rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) ID, DRAIN CURRENT (A) 14 FIGURE 4. SATURATION CHARACTERISTICS VDS = 25V PULSE DURATION = 80µs DUTY CYCLE ≤ 2% 20 4 6 8 10 12 VDS, DRAIN TO SOURCE VOLTAGE (V) 2 16 12 TC = 125oC 8 TC = 25oC 4 VGS = 10V PULSE DURATION = 80µs 1.0 DUTY CYCLE ≤ 2% TC = 125oC 0.8 0.6 TC = 25oC 0.4 TC = -40oC 0.2 TC = -40oC 0 0 0 1 4 5 2 3 VGS, GATE TO SOURCE VOLTAGE (V) 6 0 7 FIGURE 5. TRANSFER CHARACTERISTICS 4 8 16 20 12 ID, DRAIN CURRENT (A) 24 FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 5-3 28 RFM10N45, RFM10N50 Typical Performance Curves 1.4 ID = 10A VGS = 10V 1.3 ID = 250mA VGS = VDS 2.5 NORMALIZED GATE THRESHOLD VOLTAGE 2 1.5 1 0.5 1.2 1.1 1.0 0.9 0.8 0.7 0 -50 0 50 100 150 0.6 -50 200 0 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE VDS , DRAIN TO SOURCE VOLTAGE (V) C, CAPACITANCE (pF) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CGS + CDS CISS 2000 COSS 1000 100 200 150 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 4000 3000 50 TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) CRSS 10 500 8 GATE VDD = BVDSS SOURCE VOLTAGE RL = 50Ω IG(REF) = 2.1mA VGS = 10V PLATEAU VOLTAGES IN DESCENDING ORDER: VDD = BVDSS VDD = 0.75 BVDSS VDD = 0.50BVDSS VDD = 0.25B VDSS DRAIN SOURCE VOLTAGE 375 VDD = BVDSS 250 125 6 4 2 0 0 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS , GATE TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON RESISTANCE 3 Unless Otherwise Specified (Continued) 0 I G ( REF ) 20 ------------------------I G ( AC T ) 50 t, TIME (µs) I G ( REF ) 80 ------------------------I G ( AC T ) NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 11. SWITCHING TIME TEST CIRCUIT 10% 50% 50% PULSE WIDTH FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 5-4