[ /Title (RFP2N 12, RFP2N1 5) /Subject (2A, 120V and 150V, 1.75 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO220AB) /Creator () /DOCIN FO pdfmark RFP2N12, RFP2N15 Semiconductor 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 2A, 120V and 150V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • rDS(ON) = 1.750Ω • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Formerly developmental type TA09196. Ordering Information PART NUMBER PACKAGE BRAND RFP2N12 TO-220AB RFP2N12 RFP2N15 TO-220AB RFP2N15 Symbol D NOTE: When ordering, include the entire part number. G S Packaging JEDEL TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) [ /PageMode CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 5-1 File Number 2882.1 RFP2N12, RFP2N15 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . Tpkg RFP2N12 120 120 2 5 ±20 25 0.2 -55 to 150 RFP2N15 150 150 2 5 ±20 25 0.2 -55 to 150 UNITS V V A A V W W/ oC oC 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER Drain to Source Breakdown Voltage RFP2N12 SYMBOL BVDSS TEST CONDITIONS MIN TYP MAX UNITS 120 - - V 150 - - V VGS = VDS, ID = 250µA, (Figure 8) 2 - 4 V VDS = Rated BVDSS , VGS = 0V - - 1 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC - - 25 µA ID = 250µA, VGS = 0V RFP2N15 Gate Threshold Voltage Zero-Gate Voltage Drain Current VGS(TH) IDSS VGS = ±20V, VDS = 0V - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = 2A, VGS = 10V(Figures 6, 7) - - 1.750 Ω Drain to Source On Voltage VDS(ON) ID = 2A, VGS = 10V - - 3.5 V ID ≈ 1A, VDD = 75V, RG = 50Ω, RL = 73Ω, VGS = 10V (Figures 10, 11, 12) - 17 25 ns - 30 45 ns - 30 45 ns - 17 25 ns - - 200 pF - - 80 pF - - 25 pF Gate to Source Leakage Current Turn-On Delay Time IGSS td(ON) Rise Time tr Turn-Off Delay Time td(OFF) Fall Time tf Input Capacitance CISS Output Capacitance COSS Reverse-Transfer Capacitance CRSS Thermal Resistance Junction to Case VGS = 0V, VDS = 25V f = 1MHz, (Figure 9) - - 5 oC/W MIN TYP MAX UNITS ISD = -1A - - 1.4 V ISD = 2A, dlSD/dt = 50A/µs - 150 - ns RθJC Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) SYMBOL VSD Diode Reverse Recovery Time trr TEST CONDITIONS NOTES: 2. Pulsed test: Pulse width ≤ 300µs duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. 5-2 RFP2N12, RFP2N15 Typical Performance Curves Unless Otherwise Specified 2.5 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 2.0 1.5 1.0 0.5 0 0 25 50 75 100 125 TC, CASE TEMPERATURE (oC) 0 25 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 75 100 125 TC, CASE TEMPERATURE (oC) 3 TJ = MAX RATED TC = 25oC PULSE DURATION = 80µs DUTY CYCLE ≤ 2% TC = 25oC 2.5 ID, DRAIN CURRENT (A) OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 0.10 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 8V 2 VGS = 7V VGS = 6V 1.5 1 VGS = 5V VGS = 4V 0 1000 0 1 3 5 2.5 2 125oC -40oC 25oC 1.5 1 125oC 0.5 2 3 4 5 VDS, DRAIN TO SOURCE VOLTAGE (V) 6 FIGURE 4. SATURATION CHARACTERISTICS rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) IDS(ON), DRAIN TO SOURCE CURRENT (A) FIGURE 3. FORWARD BIAS OPERATING AREA VDS = 10V PULSE DURATION = 80µs DUTY CYCLE ≤ 2% VGS = 10V VGS = 20V 0.5 0.01 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 ID, DRAIN CURRENT (A) 50 VGS = 10V PULSE DURATION = 80µs DUTY CYCLE ≤ 2% 4 125oC 3 25oC 2 -40oC 1 -40oC 0 0 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 0 10 FIGURE 5. TRANSFER CHARACTERISTICS 0.5 1.5 1 ID, DRAIN CURRENT (A) 2 2.5 FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 5-3 RFP2N12, RFP2N15 1.4 ID = 2A VGS = 10V 1.5 1 0.5 0 -50 0 50 100 TJ, JUNCTION TEMPERATURE (oC) 240 CISS 80 COSS VDD = BVDSS 112.5 40 CRSS 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 150 10 150 VDS, DRAIN TO SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 120 0 50 100 TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 160 0 0.8 0.6 50 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS = CDS + CGD 200 1.0 150 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE VGS = VDS ID = 250µA 1.2 NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN TO SOURCE ON RESISTANCE 2 Unless Otherwise Specified (Continued) FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE VDD = BVDSS 8 6 0.75BVDSS 0.50BVDSS 0.25BVDSS 75 4 RL = 75Ω IG(REF) = 0.095mA VGS = 10V 37.5 2 DRAIN SOURCE VOLTAGE 0 50 GATE SOURCE VOLTAGE 0 I 20 G(REF) IG(ACT) t, TIME (µs) I 80 G(REF) IG(ACT) NOTE: Refer to Harris Applications Notes AN7254 and AN7260 FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT 5-4 VGS, GATE TO SOURCE VOLTAGE (V) Typical Performance Curves RFP2N12, RFP2N15 Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr VDS RL 90% 90% + RG - VDD 10% 10% 0 90% DUT VGS VGS 0 10% VDS (ISOLATED SUPPLY) CURRENT REGULATOR 0.2µF 50% PULSE WIDTH FIGURE 12. RESISTIVE SWITCHING WAVEFORMS FIGURE 11. SWITCHING TIME TEST CIRCUIT 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G IG(REF) 0 S 0 IG CURRENT SAMPLING RESISTOR IG(REF) VDS ID CURRENT SAMPLING RESISTOR 0 FIGURE 14. GATE CHARGE WAVEFORMS FIGURE 13. GATE CHARGE TEST CIRCUIT 5-5