RFM7N35, RFM7N40, RFP7N35, RFP7N40 Semiconductor 7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 7A, 350V and 400V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • High Input Impedance Formerly developmental type TA17424. • rDS(ON) = 0.75Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER PACKAGE G BRAND RFM7N35 TO-204AA RFM7N35 RFM7N40 TO-204AA RFM7N40 RFP7N35 TO-220AB RFP7N35 RFP7N40 TO-220AB RFP7N40 S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AA JEDEC TO-220AB DRAIN (FLANGE) DRAIN (TAB) SOURCE DRAIN GATE SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 5-1 File Number 1536.2 RFM7N35, RFM7N40, RFP7N35, RFP7N40 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor (Above 25oC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 (for TO-220) . . . . . . . . . . Tpkg RFM7N35 350 350 7 15 ±20 100 0.8 -55 to 150 RFM7N40 400 400 7 15 ±20 100 0.8 -55 to 150 RFP7N35 350 350 7 15 ±20 75 0.6 -55 to 150 RFP7N40 400 400 7 15 ±20 75 0.6 -55 to 150 UNITS V V A A V W W/oC oC 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL MIN TYP MAX UNITS RFM7N35, RFP7N35 350 - - V RFM7N40, RFP7N40 400 - - V VGS = VDS , ID = 250µA (Figure 8) 2 - 4 V VDS = Rated BVDSS , TC = 25oC - - 1 µA VDS = 0.8 x Rated BVDSS , TC = 125oC - - 25 µA VGS = ±20V, VDS = 0V - - ±100 nA Drain to Source Breakdown Voltage BVDSS Gate Threshold Voltage VGS(TH) Zero Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS TEST CONDITIONS ID = 250µA, VGS = 0V Drain to Source On Resistance (Note 2) rDS(ON) ID = 7A, VGS = 10V (Figures 6, 7) - - 0.75 Ω Drain to Source On Voltage (Note 2) VDS(ON) ID = 7A, VGS = 10V - - 5.25 V VDS = 200V, ID ≈ 3.5A, RG = 50Ω, RL = 56Ω, VGS = 10V (Figures 10, 11, 12) - 16 45 ns - 54 75 ns td(OFF) - 170 250 ns tf - 62 100 ns - - 1600 pF - - 300 pF - - 200 pF Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time Fall Time Input Capacitance CISS Output Capacitance COSS Reverse-Transfer Capacitance CRSS Thermal Resistance Junction to Case RθJC VDS = 25V, VGS = 0V, f = 1MHz (Figure 9) RFM7N35, RFM7N40 - - 1.25 oC/W RFP7N35, RFP7N40 - - 1.67 oC/W Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS MIN TYP MAX UNITS ISD = 7A - - 1.4 V ISD = 7A, dISD/dt = 100A/µs - 870 - ns NOTES: 2. Pulse Test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. 5-2 RFM7N35, RFM7N40, RFP7N35, RFP7N40 Typical Performance Curves Unless Otherwise Specified POWER DISSIPATION MULTIPLIER 1.2 8 7 ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 6 RFM7N40 5 RFP7N40 4 3 2 0.2 1 0 0 50 100 0 25 150 50 75 TC , CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE PULSE DURATION = 80µs TC = 25oC ID (MAX) CONTINUOUS DC OP ER OPERATION IN THIS AREA IS LIMITED BY rDS(ON) 1 0 AT I ON RFM7N35, 40 RFP7N35, 40 VGS = 6V 12 VGS = 7V TO 20V 8 VGS = 5V 4 VGS = 4V RFM7N35, RFP7N35 RFM7N40, RFP7N40 1 0 10 100 VDS , DRAIN TO SOURCE VOLTAGE (V) 1000 0 12 16 20 1.8 TC = 125oC rDS(ON) , DRAIN TO SOURCE ON RESISTANCE (Ω) IDS(ON) , DRAIN TO SOURCE CURRENT (A) 8 FIGURE 4. SATURATION CHARACTERISTICS VDS = 10V PULSE DURATION = 250µs 12 TC = 25oC 4 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 16 150 16 TC = 25oC TJ = MAX RATED 10 125 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE ID , DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 100 100 TC, CASE TEMPERATURE (oC) TC = -40oC 8 TC = 125oC 4 0 VGS = 10V PULSE DURATION = 250µs 1.4 1 TC = 25oC TC = -40oC 0.6 0.2 0 2 4 6 VGS , GATE TO SOURCE (V) 8 10 0 FIGURE 5. TRANSFER CHARACTERISTICS 4 8 12 ID , DRAIN CURRENT (A) 16 FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 5-3 20 RFM7N35, RFM7N40, RFP7N35, RFP7N40 Unless Otherwise Specified (Continued) 1.4 VGS = 10V ID = 7A 2 ID = 250µA NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN TO SOURCE ON RESISTANCE Typical Performance Curves 1.5 1 1.2 1 0.8 0.5 0.6 0 50 100 150 TJ , JUNCTION TEMPERATURE (oC) -50 200 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 400 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGS 1400 1200 BVDSS VDD = VDSS 300 CISS VDS , (V) 1000 200 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 1600 C, CAPACITANCE (pF) 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) 800 600 GATE TO SOURCE VOLTAGE 10 RL = 57Ω IG(REF) = 0.45mA VGS = 10V 8 VDD = VDSS 6 200 0.75 VDSS 4 VGS , (V) -50 0.50 VDSS 400 100 COSS 0.25 VDSS 200 DRAIN TO SOURCE VOLTAGE CRSS 10 0 0 0 0 2 20 30 VDS , DRAIN TO SOURCE (V) 40 50 20 IG(REF) t, TIME (µs) IG(ACT) 80 IG(REF) IG(ACT) NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 0 10% DUT 90% VGS VGS 0 FIGURE 11. SWITCHING TIME TEST CIRCUIT 10% 50% 50% PULSE WIDTH FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 5-4