RFM12N08, RFM12N10, RFP12N08, RFP12N10 Semiconductor Data Sheet 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs [ /Title (RFM12 These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such N08, RFM12 as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching N10, transistors requiring high speed and low gate drive power. RFP12 These types can be operated directly from integrated N08, circuits. RFP12 Formerly developmental type TA09594. N10) /SubOrdering Information ject PART NUMBER PACKAGE BRAND (12A, 80V and RFM12N08 TO-204AA RFM12N08 100V, RFM12N10 TO-204AA RFM12N10 0.2 RFP12N08 TO-220AB RFP12N08 Ohm, N-Chan- RFP12N10 TO-220AB RFP12N10 nel NOTE: When ordering, use the entire part number. Power MOSPackaging FETs) /Author JEDEC TO-204AA () DRAIN /Key(FLANGE) words (Harris Semiconductor, NSOURCE (PIN 2) ChanGATE (PIN 1) nel Power MOSFETs, TO204AA, TO220AB) /Cre- 1 October 1998 File Number 1386.2 Features • 12A, 80V and 100V • rDS(ON) = 0.200Ω • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S JEDEC TO-220AB DRAIN (TAB) SOURCE DRAIN GATE CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 RFM12N08, RFM12N10, RFP12N08, RFP12N10 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . Tpkg RFM12N08 80 80 12 30 ±20 75 0.6 -55 to 150 RFM12N10 100 100 12 30 ±20 75 0.6 -55 to 150 RFP12N08 80 80 12 30 ±20 60 0.48 -55 to 150 RFP12N10 100 100 12 30 ±20 60 0.48 -55 to 150 UNITS V V A A V W W/oC oC 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL MIN TYP MAX UNITS RFM12N08, RFP12N08 80 - - V RFM12N10, EFP12N10 100 - - V VGS = VDS, ID = 250µA (Figure 8) 2 - 4 V VDS = Rated BVDSS, VGS = 0V - - 1 µA VDS = 0.8 x Rated BVDSS, TC = 125oC - - 25 µA VGS = ±20V, VDS = 0V - - ±100 nA Drain to Source Breakdown Voltage Gate Threshold Voltage BVDSS VGS(TH) Zero Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS TEST CONDITIONS ID = 250µA, VGS = 0V Drain to Source On Resistance (Note 2) rDS(ON) ID = 12A, VGS = 10V (Figures 6, 7) - - 0.200 Ω Drain to Source On Voltage (Note 2) VDS(ON) ID = 12A, VGS = 10V - - 2.4 V VDD = 50V, ID = 6A, RG = 50Ω, VGS = 10V, RL = 8Ω, (Figures 10, 11, 12) - 45 70 ns - 250 375 ns td(OFF) - 85 130 ns tf - 100 150 ns - - 850 pF - - 300 pF - - 150 pF Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time Fall Time Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Thermal Resistance Junction to Case RθJC VDS = 25V, VGS = 0V, f = 1MHz (Figure 9) RFM12N08, RFM12N10 - - 1.67 oC/W RFP12N08, RFP12N10 - - 2.083 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL Source to Drain Voltage (Note 2) Reverse Recovery Time VSD trr TEST CONDITIONS MIN TYP MAX UNITS ISD = 6A - - 1.4 V ISD = 4A, dISD/dt = 100A/µs - 150 - ns NOTE: 2. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. 2 RFM12N08, RFM12N10, RFP12N08, RFP12N10 1.2 14 1.0 12 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER Typical Performance Curves Unless Otherwise Specified 0.8 0.6 0.4 0.2 0 RFM12N08, RFM12N10 10 RFP12N08, RFP12N10 8 6 4 2 0 0 50 100 150 25 50 75 100 125 TC, CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 16 TC = 25oC ID (MAX) CONTINUOUS 10 DC OP OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 ER AT I ON VDSS (MAX) 80V RFM12N08, RFP12N08 VDSS (MAX) 100V RFM12N10, RFP12N10 VGS = 9V PULSE DURATION = 80µs DUTY CYCLE ≤ 2% TC = 25oC VGS = 8V 8 VGS = 7V 4 VGS = 6V 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 1000 VGS = 5V 0 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 2 4 6 8 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 FIGURE 4. SATURATION CHARACTERISTICS 0.8 16 VDS = 10V PULSE DURATION = 80µs DUTY CYCLE ≤ 2% TC = 25oC rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) IDS(ON), DRAIN TO SOURCE CURRENT (A) VGS = 10V VGS = 20V 12 0 1 150 TC = 125oC 12 TC = -40oC 8 TC = 125oC 4 TC = 25oC TC = -40oC 0 VGS = 10V PULSE DURATION = 80µs DUTY CYCLE ≤ 2% 0.6 0.4 TC = 125oC TC = 25oC 0.2 TC = -40oC 0 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 5. TRANSFER CHARACTERISTICS 3 12 4 8 12 ID, DRAIN CURRENT (A) 16 FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 20 RFM12N08, RFM12N10, RFP12N08, RFP12N10 Typical Performance Curves Unless Otherwise Specified 1.4 VGS = 10V ID = 12A PULSE DURATION = 80µs 1.5 NORMALIZED GATE THRESHOLD VOLTAGE 1.0 0.5 0 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) 1 0.8 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) 100 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGS 1000 800 600 CISS 400 COSS 200 CRSS 10 20 30 40 50 VDS, DRAIN TO SOURCE (V) 75 RL = 8.33Ω IG(REF) = 0.56mA VDD = BVDSS GATE SOURCE VOLTAGE VGS = 10V VDD = BVDSS 70 10 8 6 50 0.75 BVDSS 4 0.50 BVDSS 25 0.25 BVDSS 2 DRAIN SOURCE VOLTAGE 0 0 60 200 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 1200 C, CAPACITANCE (pF) 1.2 0.6 -50 200 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 0 0 VGS = VDS ID = 250µA I 20 G(REF) IG(ACT) t, TIME (µs) I 80 G(REF) IG(ACT) NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 4 FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT VGS, GATE TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON RESISTANCE 2.0 (Continued) RFM12N08, RFM12N10, RFP12N08, RFP12N10 Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr VDS RL 90% 90% + RG - VDD 10% 10% 0 90% DUT VGS VGS 0 10% VDS (ISOLATED SUPPLY) CURRENT REGULATOR 0.2µF 50% PULSE WIDTH FIGURE 12. RESISTIVE SWITCHING WAVEFORMS FIGURE 11. SWITCHING TIME TEST CIRCUIT 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G IG(REF) 0 S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 13. GATE CHARGE TEST CIRCUIT 5 IG(REF) 0 FIGURE 14. GATE CHARGE WAVEFORMS