[ /Title (RFL1N 12L, RFL1N1 5L) /Subject (1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, Logic Level, N-Channel Power MOSFETs, TO205AF) RFL1N12L, RFL1N15L Semiconductor 1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 1A, 120V and 150V RFL1N12L TO-205AF RFL1N12L These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. RFL1N15L TO-205AF RFL1N15L Formerly developmental type TA09528. • rDS(ON) = 1.900Ω Ordering Information PART NUMBER PACKAGE BRAND NOTE: When ordering, use the entire part number. Symbol D G S Packaging JEDEC TO-205AF DRAIN (CASE) SOURCE GATE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 7-1 File Number 1513.2 RFL1N12L, RFL1N15L Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFL1N12L RFL1N15L UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 120 150 V Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . VDGR 120 150 V Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 1 1 A A 5 5 Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM ±10 ±10 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 8.33 8.33 W 0.0667 0.0667 W/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .TL 260 260 oC Above TC = 25oC, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER MIN TYP MAX UNITS RFL1N12L 120 - - V RFL1N15L 150 - - V VGS = VDS, ID = 250µA, (Figure 8) 1 - 2 V VDS = Rated BVDSS - - 1 µA VDS = 0.8 x Rated BVDSS, TC = 125oC - - 25 µA VGS = ±10V, VDS = 0 - - ±100 µA Drain to Source Breakdown Voltage Gate Threshold Voltage SYMBOL BVDSS VGS(TH) Zero Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS TEST CONDITIONS ID = 250µA, VGS = 0 Drain to Source On Resistance (Note 2) rDS(ON) ID = 1A, VGS = 5V, (Figures 6, 7) - - 1.900 Ω Drain to Source On Voltage (Note 2) VDS(ON) ID = 1A, VGS = 5V - - 1.9 V ID ≈ 1A, VDD = 75V, RG = 6.25Ω, RL = 75Ω, VGS = 5V, (Figures 10, 11, 12) - 10 25 ns - 10 45 ns td(OFF) - 24 45 ns tf - 30 50 ns - - 200 pF Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time Fall Time Input Capacitance CISS Output Capacitance COSS - - 80 pF Reverse Transfer Capacitance CRSS - - 35 pF Thermal Resistance Junction to Case RθJC - - 15 oC/W VGS = 0V, VDS = 25V, f = 1MHz,(Figure 9) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS MIN TYP MAX UNITS ISD = 1A - - 1.4 V ISD = 1A, dISD/dt = 50A/µs - 150 - ns NOTES: 2. Pulse test: width ≤ 300µs duty cycle ≤ 2%. 3. Repetitive rating: pulse witdh limited by maximum junction temperature. 7-2 RFL1N12L, RFL1N15L Typical Performance Curves Unless Otherwise Specified 1.2 1.0 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.8 0.6 0.4 0.2 0.2 0 25 0 0 25 50 75 100 TC, CASE TEMPERATURE (oC) 125 150 VGS = 10V ID, DRAIN CURRENT (A) RFL1N15L 0.1 RFL1N12L ID, DRAIN CURRENT (A) 1 1 2 VGS = 3V PULSE DURATION = 80µs DUTY CYCLE ≤ 2% TC = 25oC 1 VGS = 2V 10 100 VDS, DRAIN TO SOURCE (V) 1000 0 1 -25oC 3 125oC 2 125oC 1 -40oC 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 9 10 FIGURE 5. TRANSFER CHARACTERISTICS 125oC 3 25oC 2 -40oC 1 0.5 5 VGS = 5V PULSE DURATION = 80µs DUTY CYCLE ≤ 2% 4 RESISTANCE (Ω) 4 -40oC 3 4 5 6 7 8 2 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. SATURATION CHARACTERISTICS rDS(ON), DRAIN TO SOURCE ON ID(ON), ON-STATE DRAIN CURRENT (A) VDS = 10V PULSE DURATION = 80µs DUTY CYCLE ≤ 2% VGS = 4V VGS = 5V 3 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 5 150 4 TC = 25oC OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 0.01 75 100 125 TC, CASE TEMPERATURE (oC) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 10 50 0 1 2 3 ID, DRAIN CURRENT (A) 4 FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 7-3 5 RFL1N12L, RFL1N15L Unless Otherwise Specified (Continued) 2 1.5 1 0.5 -50 0 50 100 ID = 250µA VGS = VDS 1.5 1 0.5 150 -50 0 50 100 TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 150 VDS, DRAIN TO SOURCE VOLTAGE (V) 240 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGS 200 C, CAPACITANCE (pF) 150 160 120 CISS 80 COSS 40 CRSS 0 10 20 30 40 50 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 VDS RL = 75Ω IG(REF) = 0.095mA VGS = 5V 112.5 8 GATE SOURCE VOLTAGE 75 VDD = BVDSS 6 VDD = BVDSS 4 0.75VDSS 0.50VDSS 0.25VDSS DRAIN SOURCE VOLTAGE 37.5 2 0 0 I 20 G(REF) IG(ACT) 60 VGS, GATE TO SOURCE VOLTAGE (V) 2 THRESHOLD VOLTAGE ID = 1A VGS = 5V VGS(TH), NORMALIZED GATE NORMALIZED DRAIN TO SOURCE ON RESISTANCE Typical Performance Curves t, TIME (µs) I 80 G(REF) IG(ACT) NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 11. SWITCHING TIME TEST CIRCUIT 10% 50% 50% PULSE WIDTH FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 6-4