RFP2P08, RFP2P10 Semiconductor Data Sheet October 1998 -2A, -80V and -100V, 3.500 Ohm, P-Channel Power MOSFETs Features These are P-Channel enhancement mode silicon gate • rDS(ON) = 3.500Ω File Number 2870.1 • -2A, -80V and -100V [ /Title power field effect transistors designed for applications such • Related Literature (RFP2P as switching regulators, switching converters. motor drivers, - TB334 “Guidelines for Soldering Surface Mount relay drivers, and drivers for high power bipolar switching 08, Components to PC Boards RFP2P transistors requiring high speed and low gate drive power. These types can be operated directly from integrated Symbol 10) circuits. /SubFormerly developmental type TA_____. D ject (2A, Ordering Information 80V G PART NUMBER PACKAGE BRAND and RFP2P08 TO-220AB RFP2P08 100V, S RFP2P10 TO-220AB RFP2P10 3.500 NOTE: When ordering, use entire part number. Ohm, P-Channel Packaging Power TO-220AB MOSSOURCE FETs) DRAIN GATE /Author () DRAIN (FLANGE) /Keywords (Harris Semiconductor, P-Channel Power MOSFETs, TO220AB) /Creator () /DOCI NFO pdf- 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 RFP2P08, RFP2P10 RFP2P08 RFP2P10 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS -80 -100 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . VDGR -80 -100 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 2 5 2 5 A A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 0.2 25 0.2 W W/oCaaa Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG -55 to 150 -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL MIN TYP MAX UNITS RFP2P08 -80 - - V RFP2P10 -100 - - V -2 - -4 V - - -1 µA - - -25 µA VGS = ±20V, VDS = 0V - - ±100 nA Drain to Source Breakdown Voltage Gate Threshold Voltage BVDSS ID = -250µA, VGS = 0 VGS(TH) Zero-Gate Voltage Drain Current TEST CONDITIONS IDSS VGS = VDS, ID = -250µA VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC Gate to Source Leakage Current IGSS = 125oC Drain to Source On Resistance (Note 2) rDS(ON) ID = -2A, VGS = -10V (Figures 6, 7) - - 3.500 Ω Drain to Source On Voltage (Note 2) VDS(ON) ID = -2A, VGS = -10V - - -7.0 V ID = ≈ 1A, VDD = -50V, RG = 50Ω, VGS = -10V, RL = 46.5Ω (Figures 10, 11, 12) - 7 25 ns - 15 45 ns td(OFF) - 14 45 ns tf - 11 25 ns - - 150 pF - - 80 pF - - 30 pF 5 oC/W Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time Fall Time Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Thermal Resistance Junction to Case VGS = 0V, VDS = -25V, f =1MHz (Figure 9) RθJC - - Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS MIN TYP MAX UNITS ISD = -1A - - -1.4 V ISD = -2A, dISD/dt = 50A/µs - 135 - ns NOTES: 2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. 2 RFP2P08, RFP2P10 Unless otherwise Specified 1.2 2.5 1.0 2.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER Typical Performance Curves 0.8 0.6 0.4 0.2 1.5 1.0 0.5 0 0 25 50 75 100 125 0 25 150 50 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 4 TJ = MAX RATED TC = 25oC 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 0.10 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 10 75 100 125 TC, CASE TEMPERATURE (oC) PULSE DURATION = 80µs DUTY CYCLE ≤ 2% TC = 25oC 3 VGS = -20V 2 VGS = -10V VGS = -8V VGS = -4V VGS = -7V 1 VGS = -6V VGS = -5V 0.01 1 10 100 1000 0 -2 -3 -4 -1 VDS, DRAIN TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. SATURATION CHARACTERISTICS 4 3.5 VDS = -15V PULSE DURATION = 80µs DUTY CYCLE ≤ 2% 3 2.5 -40oC 25oC 2 1.5 125oC 1 0.5 0 0 -2 -4 -6 -8 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 5. TRANSER CHARACTERISTICS 3 VGS = -10V PULSE DURATION = 80µs DUTY CYCLE ≤ 2% 125oC -10 rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) IDS(ON), DRAIN TO SOURCE CURRENT (A) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA -5 3 25oC 2 -40oC 1 0 0 1 2 3 ID, DRAIN CURRENT (A) 4 FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 5 RFP2P08, RFP2P10 Unless otherwise Specified (Continued) 1.4 ID = -2A VGS = -10V PULSE DURATION = 80µs 2 1.3 NORMALIZED GATE THRESHOLD VOLTAGE 1.5 1 0.5 ID = 250µA VDS = -5V 1.2 1.1 1.0 0.9 0.8 0.7 -50 0 50 100 0.6 -50 150 0 50 100 TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 150 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD C, CAPACITANCE (pF) 140 120 CISS 100 80 60 COSS 40 CRSS 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 160 10 VDD = BVDSS GATE SOURCE VOLTAGE RL = 50Ω IG(REF) = 0.095mA VGS = -10V 0.75BVDSS 0.75BVDSS 0.50BVDSS 0.50BVDSS 0.25BVDSS 0.25BVDSS VDD = BVDSS 75 50 8 6 4 25 2 DRAIN SOURCE VOLTAGE 0 0 0 -10 -20 -30 -40 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 I (REF) 20 G IG (ACT) -50 t, TIME (µs) I (REF) 80 G IG (ACT) NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuit and Waveforms tON tOFF td(OFF) td(ON) tr 0 RL DUT VGS VDD RG + tf 10% 10% VDS VGS 0 90% 90% 10% 50% 50% PULSE WIDTH 90% FIGURE 11. SWITCHING TIME TEST CIRCUIT 4 FIGURE 12. RESISTIVE SWITCHING WAVEFORMS VGS, GATE TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON RESISTANCE (mΩ) Typical Performance Curves RFP2P08, RFP2P10 Test Circuit and Waveforms -VDS (ISOLATED SUPPLY) CURRENT REGULATOR 0 VDS DUT 12V BATTERY 0.2µF 50kΩ 0.3µF Qgs Qg(TOT) DUT G VGS Qgd D VDD 0 S IG(REF) IG CURRENT SAMPLING RESISTOR +VDS ID CURRENT SAMPLING RESISTOR FIGURE 13. GATE CHARGE TEST CIRCUIT 5 0 IG(REF) FIGURE 14. GATE CHARGE WAVEFORMS