Transistor 2SC3130 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm +0.2 2.8 –0.3 (Ta=25˚C) Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 3 V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1.45 0.95 +0.1 +0.1 0.16 –0.06 0.8 1:Base 2:Emitter 3:Collector 0 to 0.1 Symbol Parameter 3 0.1 to 0.3 0.4±0.2 Parameter ■ Electrical Characteristics 1 0.95 +0.2 1.1 –0.1 ■ Absolute Maximum Ratings 0.65±0.15 2 +0.2 ● 2.9 –0.05 ● 0.65±0.15 High transition frequency fT. Small collector output capacitance Cob and common base reverse transfer capacitance Crb. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.9±0.2 ● 0.4 –0.05 ■ Features +0.25 1.5 –0.05 JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : 1S (Ta=25˚C) Symbol Conditions min typ VCB = 10V, IE = 0 max Unit 1 µA Collector cutoff current ICBO Collector to emitter voltage VCEO IC = 2mA, IB = 0 10 V Emitter to base voltage VEBO IE = 10µA, IC = 0 3 V VCE = 4V, IC = 5mA 75 * Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) IC = 20mA, IB = 4mA Transition frequency fT VCB = 4V, IE = –5mA, f = 200MHz Collector output capacitance Cob VCB = 4V, IE = 0, f = 1MHz Base time constant rbb' · CC VCB = 4V, IE = –5mA, f = 31.9MHz Common emitter reverse transfer capacitance Crb VCB = 4V, IE = 0, f = 1MHz hFE ratio ∆hFE *h FE VCE = 4V, IC = 100µA VCE = 4V, IC = 5mA 1.4 200 1.9 400 0.5 V 2.5 GHz 1.4 0.75 pF 11 ps 0.45 pF 1.6 Rank classification Rank P Q R hFE 75 ~ 130 110 ~ 220 200 ~ 400 Marking Symbol 1SP 1SQ 1SR 1 2SC3130 Transistor PC — Ta IC — VCE 60 TC=Ta 80 40 60 50 IB=500µA 400µA 40 300µA 30 200µA 20 100µA Collector current IC (mA) 120 Ta=75˚C –25˚C 40 30 20 10 10 0 40 60 80 100 120 140 160 0 0 2 10 3 1 Ta=75˚C 25˚C –25˚C 0.03 1 3 10 30 100 Collector current IC (mA) Cob — VCB IE=0 f=1MHz Ta=25˚C 1.2 1.0 0.8 0.6 0.4 0.2 0 1 3 10 0 0.4 30 100 Collector to base voltage VCB (V) 0.8 1.2 1.6 2.0 Base to emitter voltage VBE (V) fT — I E 4.0 300 Ta=75˚C 240 25˚C 180 –25˚C 120 60 VCB=4V Ta=25˚C 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0.1 0.3 1 3 10 30 Collector current IC (mA) 1.6 1.4 12 VCE=4V Forward current transfer ratio hFE 30 0.3 10 360 IC/IB=10 0.01 0.1 8 hFE — IC 100 0.1 6 Collector to emitter voltage VCE (V) VCE(sat) — IC 0.3 4 Transition frequency fT (GHz) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 25˚C 50 160 0 Collector output capacitance Cob (pF) VCE=4V Ta=25˚C 70 0 2 IC — VBE 80 Collector current IC (mA) Collector power dissipation PC (mW) 200 100 0 – 0.1 – 0.3 –1 –3 –10 –30 Emitter current IE (mA) –100