TVS3V3L4U Data Sheet (1.3 MB, EN)

TVS Diodes
Transient Voltage Suppressor Diodes
TVS3V3L4U
Low Capacitance ESD / Transient / Surge Protection Array
TVS3V3L4U
Data Sheet
Revision 2.4, 2013-02-06
Final
Power Management & Multimarket
Edition 2013-02-06
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
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Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
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devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
TVS3V3L4U
Revision History: Rev. 2.3 2012-01-11
Page or Item
Subjects (major changes since previous revision)
Revision 2.4, 2013-02-06
4
Halogen free deleted
Trademarks of Infineon Technologies AG
AURIX™, BlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™,
CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™,
EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, I²RF™, IsoPACK™, MIPAQ™,
ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™,
PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SMARTi™,
SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™,
XPOSYS™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, PRIMECELL™,
REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership.
Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation
Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation.
FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of
Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of
INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of
Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP.
MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2010-06-09
FinalData Sheet
3
Revision 2.4, 2013-02-06
TVS3V3L4U
Low Capacitance ESD / Transient / Surge Protection Array
1
Low Capacitance ESD / Transient / Surge Protection Array
1.1
Features
•
•
•
•
•
•
ESD/Transient/Surge protection according to:
IEC61000-4-2 (ESD): ±30 kV air/contact discharge
IEC61000-4-4 (EFT): ±80 A (5/50 ns)
IEC61000-4-5 (Surge): ±20 A (8/20 μs)
Reverse working voltage maximum: VRWM = 3.3 V
Low leakage current: IR < 50 nA
Low capacitance: CL = 2 pF typ. (I/O to GND), 1 pF typ. (I/O to I/O)
Low clamping voltage: VCL = 7.7 V typ. @ 20 A (8/20 μs)
Pb-free (RoHS compliant) package
1.2
•
•
•
Application Examples
10/100/1000 Ethernet
4 lines uni-directional (Pin 2 to GND)
2 lines bi-directional (Pin 2 n.c.)
1.3
Product Description
Pin 6
Pin 5
Pin 4
Pin 1
Pin 2
Pin 3
a) Pin configuration
Pin 1
Pin 3
Pin 5
n.c.
Pin 4
Pin 6
GND
b) Schematic diagram
Pin 2
TVS3V3L4U_PinConf_and_SchematicDiag1.vsd
Figure 1-1 Pin configuration and Schematic diagram
Table 1-1
Ordering Information
Type
Package
Configuration
TVS3V3L4U
SC74
4 lines, uni-directional or 2 lines, bidirectional
FinalData Sheet
4
Marking code
E1s
Revision 2.4, 2013-02-06
TVS3V3L4U
Electrical Characteristics
2
Electrical Characteristics
2.1
Maximum Ratings
Table 2-1
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
ESD discharge
air
contact
Symbol
1)
Values
Unit
Min.
Typ.
Max.
-30
-30
–
–
30
30
-20
–
20
kV
VESD
Peak pulse current (tP = 8/20 μs)2)
IPP
Peak pulse power
tP = 8/20 μs2)
tP = 100 ns3)
PPK
Operating temperature
Storage temperature
A
W
–
–
–
–
154
1044
TOP
-55
–
125
°C
Tstg
-55
–
150
°C
1) VESD according to IEC61000-4-2
2) IPP according to IEC61000-4-5. PPK is calculated by IPP x VCL.
3) Please refer to AN210[1]. PPK is calculated by ITLP x VCL.
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
FinalData Sheet
5
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TVS3V3L4U
Electrical Characteristics
2.2
DC Characteristics
!
"#
!
#
"#
Figure 2-1 Definitions of electrical characteristics
Table 2-2
DC Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Note /
Test Condition
Reverse working voltage
VRWM
–
–
3.3
V
Reverse current
IR
–
–
50
nA
VR = 3.3 V
Unit
Note /
Test Condition
pF
VR = 0 V, f = 1 MHz
2.3
RF Characteristics
Table 2-3
RF Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Line capacitance
I/O to GND
I/O to I/O
FinalData Sheet
Symbo
l
Min.
Values
Typ.
Max.
2
1
3
–
CL
–
–
6
Revision 2.4, 2013-02-06
TVS3V3L4U
Electrical Characteristics
2.4
ESD Characteristics
Table 2-4
ESD Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbo
l
Min.
1)
Reverse clamping voltage
I/O to GND
I/O to GND
I/O to GND
I/O to GND
I/O to GND
Dynamic resistance1)
I/O to GND
Note /
Test Condition
V
Max.
–
–
–
–
–
4.2
4.9
5.8
6.7
7.7
–
–
–
–
–
tp = 8/20 μs
IPP = 1 A
IPP = 5 A
IPP = 10 A
IPP = 15 A
IPP = 20 A
–
5.8
–
tp = 100 ns
IPP = 16 APP
–
–
1.1
4
–
–
tp = 8/20 μs
IPP = 1 A
IPP = 20 A
–
3.1
–
tp = 100 ns
IPP = 16 A
–
0.15
–
tp = 8/20 μs
–
0.09
–
tp = 100 ns
V
VFC
Forward clamping voltage2)
GND to I/O
Unit
Typ.
VCL
Reverse clamping voltage2)
I/O to GND
Forward clamping voltage1)
GND to I/O
GND to I/O
Values
Ω
RDYN
2)
Dynamic restiance
I/O to GND
1) IPP according to IEC61000-4-5
2) Please refer to Application Note AN210 [1]. TLP parameter: Z0 = 50 Ω , tp = 100ns, tr = 300ps, averaging window: t1 = 30 ns
to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristics between IPP1 = 10 A and
IPP2 = 40 A.
FinalData Sheet
7
Revision 2.4, 2013-02-06
TVS3V3L4U
Typical Characteristic
3
Typical Characteristic
3
CL [pF]
2.5
2
1.5
1
0
0.5
1
1.5
2
2.5
3
3.5
VR [V]
Figure 3-1 Line capacitance CL = f(VR)
-1
10
-2
10
-3
10
-4
IF [A]
10
-5
10
-6
10
10-7
10-8
-9
10
0.2
0.4
0.6
VF [V]
0.8
1
Figure 3-2 Forward characteristic, IF = f(VF)
FinalData Sheet
8
Revision 2.4, 2013-02-06
TVS3V3L4U
Typical Characteristic
-7
10
-8
10
IR [A]
-9
10
10
-10
10
-11
10
-12
0
0.5
1
1.5
2
VR [V]
2.5
3
3.5
100
125
Figure 3-3 Reverse current, IR = f(VR)
-7
IR [A]
10
-8
10
-9
10
-75
-50
-25
0
25
TA [°C]
50
75
Figure 3-4 Reverse current IR = f(TA), VR = 3.3 V
FinalData Sheet
9
Revision 2.4, 2013-02-06
TVS3V3L4U
Typical Characteristic
22
20
18
IPP [A]
16
14
12
10
8
6
4
4
5
6
VCL [V]
7
8
Figure 3-5 Pulse reverse current (IEC61000-4-5) versus clamping voltage, IPP = f(VCL)
22
20
18
IPP [A]
16
14
12
10
8
6
4
1
2
3
VCL [V]
4
5
Figure 3-6 Pulse forward current (IEC61000-4-5) versus clamping voltage, IPP = f(VCL)
FinalData Sheet
10
Revision 2.4, 2013-02-06
TVS3V3L4U
Typical Characteristic
90
TVS3V3L4U
RDYN
80
40
ITLP [A]
60
30
50
40
20
RDYN=0.085Ω
30
20
Equivalent VIEC [kV]
70
10
10
0
4
5
6
7
8
9
10
11
12
0
VTLP [V]
Figure 3-7 TLP characteristics, reverse pulse
90
TVS3V3L4U
RDYN
80
40
ITLP [A]
60
30
50
40
20
RDYN=0.117Ω
30
20
Equivalent VIEC [kV]
70
10
10
0
0
2
4
6
8
10
12
0
VTLP [V]
Figure 3-8 TLP characteristics, forward pulse
FinalData Sheet
11
Revision 2.4, 2013-02-06
TVS3V3L4U
Typical Characteristic
50
VCL [V]
VCL [V]
100
50
25
0
-25
-5
0
5
0
-50
0
50
100
150
tp [ns]
10 15
tp [ns]
20
200
25
30
250
Figure 3-9 Clamping voltage at +8 kV contact discharge according IEC61000-4-2 (R = 330 Ω, C = 150 pF)
50
VCL [V]
VCL [V]
100
50
25
0
-25
-5
0
0
-50
0
50
100
150
tp [ns]
5
10 15
tp [ns]
200
20
25
30
250
Figure 3-10 Clamping voltage at -8 kV contact discharge according IEC61000-4-2 (R = 330 Ω, C = 150 pF)
FinalData Sheet
12
Revision 2.4, 2013-02-06
TVS3V3L4U
Typical Characteristic
50
VCL [V]
VCL [V]
100
50
25
0
-25
-5
0
5
0
-50
0
50
100
150
tp [ns]
10 15
tp [ns]
20
200
25
30
250
Figure 3-11 Clamping voltage at +15 kV contact discharge according IEC61000-4-2 (R = 330 Ω, C = 150 pF)
50
VCL [V]
VCL [V]
100
50
25
0
-25
-5
0
0
-50
0
50
100
150
tp [ns]
5
10 15
tp [ns]
200
20
25
30
250
Figure 3-12 Clamping voltage at -15 kV contact discharge according IEC61000-4-2 (R = 330 Ω, C = 150 pF)
FinalData Sheet
13
Revision 2.4, 2013-02-06
TVS3V3L4U
Package Information
Package Information
2.9 ±0.2
(2.25)
B
1.1 MAX.
0.15 +0.1
-0.06
5
4
1
2
3
0.35 +0.1
-0.05
Pin 1
marking
0.2
1.6 ±0.1
6
2.5 ±0.1
(0.35)
0.25 ±0.1
4
A
B 6x
M
0.1 MAX.
0.95
0.2
1.9
M
A
SC74-PO V04
Figure 4-1 SC74 Package outline
2.9
1.9
0.5
0.95
SC74-FPR V04
Figure 4-2 SC74 Footprint (Reflow Soldering)
2.9
1.6
1.3 MIN.
0.5
Transport
direction
0.95
SC74-FPW V04
Figure 4-3 SC74 Footprint (Reflow Soldering)
0.2
2.7
8
4
Pin 1
marking
3.15
1.15
SC74-TP
Figure 4-4 SC74 Packing
FinalData Sheet
14
Revision 2.4, 2013-02-06
TVS3V3L4U
References
References
[1]
Infineon AG - Application Note AN210: Effective ESD Protection Design at System Level using VF-TLP
Characterization Methodology
[2]
Infineon AG - Recommendations for PCB Assembly of Infineon TSLP and TSSLP Packages
FinalData Sheet
15
Revision 2.4, 2013-02-06
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