TSM680P06 Taiwan Semiconductor P-Channel Power MOSFET -60V, -18A, 68mΩ FEATURES KEY PERFORMANCE PARAMETERS ● Improved dV/dt capability ● Fast switching ● 100% Eas Guaranteed ● Pb-free plating ● RoHS compliant ● Halogen-free mold compound PARAMETER VALUE UNIT VDS -60 V RDS(on) (max) VGS = -10V 68 VGS = -4.5V 110 mΩ Qg 16.4 nC APPLICATION ● Motor Drive ● Power Tools ● LED Lighting TO-220 ITO-220 TO-251S (IPAK SL) TO-252 (DPAK) Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) PARAMETER SYMBOL IPAK/DPAK ITO-220 TO-220 UNIT Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current Pulsed Drain Current -18 TC = 25°C (Note 1) ID TC = 100°C (Note 2) IDM Total Power Dissipation @ TC = 25°C PDTOT A -11 -72 20 A 17 42 W Single Pulsed Avalanche Energy (Note 3) EAS 12.8 mJ Single Pulsed Avalanche Current (Note 3) IAS -16 A TJ, TSTG - 55 to +150 °C Operating Junction and Storage Temperature Range THERMAL PERFORMANCE PARAMETER SYMBOL IPAK/DPAK ITO-220 TO-220 UNIT Junction to Case Thermal Resistance RӨJC Junction to Ambient Thermal Resistance RӨJA 6.1 7.5 62 3 °C/W °C/W Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air. Document Number: DS_P0000127 1 Version: F15 TSM680P06 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TC = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 4) Drain-Source Breakdown Voltage VGS = 0V, ID = -250µA BVDSS -60 -- -- V Gate Threshold Voltage VDS = VGS, ID = -250µA VGS(TH) -1.2 -1.6 -2.2 V Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA -- -- -1 -- -- -10 -- 54 68 -- 72 110 gfs -- 8.5 -- Qg -- 16.4 -- Qgs -- 2.8 -- Qgd -- 3.6 -- Ciss -- 870 -- Coss -- 70 -- Crss -- 42 -- Rg -- 16 -- td(on) -- 8.3 -- tr -- 29.6 -- td(off) -- 51.7 -- tf -- 15.6 -- VSD -- -- -1 V Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic VDS = -60V, VGS = 0V VDS = -48V, TC = 125°C VGS = -10V, ID = -6A VGS = -4.5V, ID = -3A VDS = -10V, ID = -6A IDSS RDS(on) µA mΩ S (Note 5) Total Gate Charge VDS = -30V, ID = -6A, Gate-Source Charge VGS = -10V Gate-Drain Charge Input Capacitance VDS = -30V, VGS = 0V, Output Capacitance Reverse Transfer Capacitance Gate Resistance Switching f = 1.0MHz F = 1MHz, open drain nC pF Ω (Note 6) Turn-On Delay Time VDD = -30V, Turn-On Rise Time RGEN = 6Ω, Turn-Off Delay Time ID = -1A Turn-Off Fall Time Source-Drain Diode ns (Note 3) Forward On Voltage IS = -1A, VGS = 0V Reverse Recovery Time IS =1A trr -- 20 -- ns Reverse Recovery Charge dIF/dt = 100A/µs Qrr -- 10 -- nC Integral reverse diode IS -- -- -13 A ISM -- -- -52 A Maximum Continuous Forward Current Maximum Pulse Forward Current in the MOSFET Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L = 0.1mH, IAS = -16A, VDD = -25V, RG = 25Ω, Starting TJ = 25 C 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. o Document Number: DS_P0000127 2 Version: F15 TSM680P06 Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKAGE PACKING TSM680P06CZ C0G TO-220 50pcs / Tube TSM680P06CI C0G ITO-220 50pcs / Tube TSM680P06CH C5G TSM680P06CP ROG TO-251S (IPAK SL) 75pcs / Tube TO-252 (DPAK) 2,500pcs / 13” Reel Note: 1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 2. Halogen-free according to IEC 61249-2-21 definition Document Number: DS_P0000127 3 Version: F15 TSM680P06 Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Normalized Rds(on) vs. Tj Normalized On Resistance (mΩ) -ID, Continuous Drain Current (A) Continuous Drain Current vs. Tc TC, Case Temperature (°C) TJ, Junction Temperature (°C) Gate Charge Waveform -VGS, Gate to Source Voltage (V) Normalized Gate Threshold Voltage (V) Normalized Vth vs. Tj Qg, Gate Charge (nC) TJ, Junction Temperature (°C) Maximum Safe Operation Area (TO-251S) -ID, Continuous Drain Current (A) Normalized Thermal Response Normalized Transient Impedance (TO-251S) Square Wave Pulse Duration (s) Document Number: DS_P0000127 4 -VDS, Drain to Source Voltage (V) Version: F15 TSM680P06 Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Maximum Safe Operation Area (TO-252) -ID, Continuous Drain Current (A) Normalized Thermal Response Normalized Transient Impedance (TO-252) Square Wave Pulse Duration (s) -VDS, Drain to Source Voltage (V) Maximum Safe Operation Area (TO-220) -ID, Continuous Drain Current (A) Normalized Thermal Response (RθJC) Normalized Transient Impedance (TO-220) Square Wave Pulse Duration (s) -VDS, Drain to Source Voltage (V) Maximum Safe Operation Area (ITO-220) -ID, Continuous Drain Current (A) Normalized Thermal Response (RθJC) Normalized Transient Impedance (ITO-220) Square Wave Pulse Duration (s) Document Number: DS_P0000127 -VDS, Drain to Source Voltage (V) 5 Version: F15 TSM680P06 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) TO-220 MARKING DIAGRAM G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code Document Number: DS_P0000127 6 Version: F15 TSM680P06 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) ITO-220 MARKING DIAGRAM G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code Document Number: DS_P0000127 7 Version: F15 TSM680P06 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) TO-251S MARKING DIAGRAM Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) Document Number: DS_P0000127 8 Version: F15 TSM680P06 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) TO-252 SUGGESTED PAD LAYOUT MARKING DIAGRAM Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) Document Number: DS_P0000127 9 Version: F15 TSM680P06 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_P0000127 10 Version: F15