TSM3N80 Taiwan Semiconductor N-Channel Power MOSFET 800V, 3A, 4.2Ω FEATURES ● ● ● ● KEY PERFORMANCE PARAMETERS Low RDS(ON) 3.3Ω (Typ.) Low gate charge typical @ 19nC (Typ.) Low Crss typical @ 10.2pF (Typ.) Improved dv/dt capability PARAMETER VALUE UNIT VDS 800 V RDS(on) (max) 4.2 Ω Qg 19 nC APPLICATION ● Power Supply ● Lighting TO-220 ITO-220 TO-251(IPAK) TO-252(DPAK) Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) LIMIT PARAMETER SYMBOL UNIT IPAK/DPAK ITO-220 TO-220 Drain-Source Voltage VDS 800 V Gate-Source Voltage VGS ±30 V Continuous Drain Current Pulsed Drain Current TC = 25°C (Note 1) 3 ID TC = 100°C (Note 2) A 1.83 IDM 12 A Single Pulsed Avalanche Energy (Note 3) EAS 48 mJ Single Pulsed Avalanche Current (Note 3) IAS 3 A (Note 3) EAR 9.4 mJ Repetitive Avalanche Energy (Note 4) dV/dt 4.5 V/ns Total Power Dissipation @ TC = 25°C PDTOT Repetitive Avalanche Energy Operating Junction and Storage Temperature Range 94 TJ, TSTG 32 94 - 55 to +150 W °C THERMAL PERFORMANCE LIMIT PARAMETER SYMBOL UNIT IPAK/DPAK ITO-220 TO-220 3.9 1.33 Junction to Case Thermal Resistance RӨJc 1.33 Junction to Ambient Thermal Resistance RӨJA 110 62.5 °C/W °C/W Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air Document Number: DS_P0000084 1 Version: D15 TSM3N80 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 5) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 800 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2 -- 4 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 800V, VGS = 0V IDSS -- -- 10 μA Drain-Source On-State Resistance VGS = 10V, ID = 1.5A RDS(ON) -- 3.3 4.2 Ω Forward Transfer Conductance VDS = 30V, ID = 1.5A gfs -- 3.7 -- S Qg -- 19 -- Qgs -- 4 -- Qgd -- 7.6 -- Ciss -- 696 -- Coss -- 65 -- Crss -- 10.2 -- Rg -- 3.2 -- td(on) -- 48 -- tr -- 36 -- td(off) -- 106 -- tf -- 41 -- Dynamic (Note 6) Total Gate Charge VDS = 640V, ID = 3A, Gate-Source Charge VGS = 10V Gate-Drain Charge Input Capacitance VDS = 25V, VGS = 0V, Output Capacitance Reverse Transfer Capacitance Gate Resistance Switching f = 1.0MHz F = 1MHz, open drain nC pF Ω (Note 7) Turn-On Delay Time Turn-On Rise Time VGS = 10V, ID = 3A, Turn-Off Delay Time VDD = 400V, RG =25Ω Turn-Off Fall Time Source-Drain Diode ns (Note 5) Source Current Integral reverse diode IS -- -- 3 A Source Current (Pulse) in the MOSFET ISM -- -- 12 A Diode Forward Voltage IS = 3A, VGS = 0V VSD -- -- 1.5 V Reverse Recovery Time VGS = 0V, IS =3A, trr -- 370 -- ns Reverse Recovery Charge dIF/dt = 100A/us Qrr -- 1.8 -- µC Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L = 10mH, IAS = 3A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C 4. ISD ≤ 3A, dI/dt ≤ 200A/uS, VDD ≤ BVDSS, Starting TJ = 25ºC 5. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 6. For DESIGN AID ONLY, not subject to production testing. 7. Switching time is essentially independent of operating temperature. o Document Number: DS_P0000084 2 Version: D15 TSM3N80 Taiwan Semiconductor ORDERING INFORMATION PACKAGE PACKING TSM3N80CZ C0G PART NO. TO-220 50pcs / Tube TSM3N80CI C0G TSM3N80CH C5G ITO-220 50pcs / Tube TO-251 (IPAK) 75pcs / Tube TSM3N80CP ROG TO-252 (DPAK) 2,500pcs / 13” Reel Note: 1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 2. Halogen-free according to IEC 61249-2-21 definition Document Number: DS_P0000084 3 Version: D15 TSM3N80 Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage Document Number: DS_P0000084 4 Version: D15 TSM3N80 Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Drain Current vs. Case Temperature BVDSS vs. Junction Temperature Maximum Safe Operating Area(TO-220, I/D-PAK) Capacitance vs. Drain-Source Voltage Maximum Safe Operating Area(ITO-220) Document Number: DS_P0000084 5 Version: D15 TSM3N80 Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-220, I/D-PAK) Normalized Thermal Transient Impedance, Junction-to-Ambient (ITO-220) Document Number: DS_P0000084 6 Version: D15 TSM3N80 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) TO-220 MARKING DIAGRAM Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) Document Number: DS_P0000084 7 Version: D15 TSM3N80 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) ITO-220 MARKING DIAGRAM G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code Document Number: DS_P0000084 8 Version: D15 TSM3N80 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) TO-251(IPAK) MARKING DIAGRAM Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) Document Number: DS_P0000084 9 Version: D15 TSM3N80 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) TO-252(DPAK) SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) Document Number: DS_P0000084 10 Version: D15 TSM3N80 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_P0000084 11 Version: D15