TSM3N80 N-Channel Power MOSFET

TSM3N80
Taiwan Semiconductor
N-Channel Power MOSFET
800V, 3A, 4.2Ω
FEATURES
●
●
●
●
KEY PERFORMANCE PARAMETERS
Low RDS(ON) 3.3Ω (Typ.)
Low gate charge typical @ 19nC (Typ.)
Low Crss typical @ 10.2pF (Typ.)
Improved dv/dt capability
PARAMETER
VALUE
UNIT
VDS
800
V
RDS(on) (max)
4.2
Ω
Qg
19
nC
APPLICATION
●
Power Supply
●
Lighting
TO-220
ITO-220
TO-251(IPAK)
TO-252(DPAK)
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
LIMIT
PARAMETER
SYMBOL
UNIT
IPAK/DPAK
ITO-220
TO-220
Drain-Source Voltage
VDS
800
V
Gate-Source Voltage
VGS
±30
V
Continuous Drain Current
Pulsed Drain Current
TC = 25°C
(Note 1)
3
ID
TC = 100°C
(Note 2)
A
1.83
IDM
12
A
Single Pulsed Avalanche Energy
(Note 3)
EAS
48
mJ
Single Pulsed Avalanche Current
(Note 3)
IAS
3
A
(Note 3)
EAR
9.4
mJ
Repetitive Avalanche Energy
(Note 4)
dV/dt
4.5
V/ns
Total Power Dissipation @ TC = 25°C
PDTOT
Repetitive Avalanche Energy
Operating Junction and Storage Temperature Range
94
TJ, TSTG
32
94
- 55 to +150
W
°C
THERMAL PERFORMANCE
LIMIT
PARAMETER
SYMBOL
UNIT
IPAK/DPAK
ITO-220
TO-220
3.9
1.33
Junction to Case Thermal Resistance
RӨJc
1.33
Junction to Ambient Thermal Resistance
RӨJA
110
62.5
°C/W
°C/W
Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RӨJA shown below for single device operation on FR-4 PCB in still air
Document Number: DS_P0000084
1
Version: D15
TSM3N80
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
Static
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
(Note 5)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
800
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
2
--
4
V
Gate Body Leakage
VGS = ±30V, VDS = 0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = 800V, VGS = 0V
IDSS
--
--
10
μA
Drain-Source On-State Resistance
VGS = 10V, ID = 1.5A
RDS(ON)
--
3.3
4.2
Ω
Forward Transfer Conductance
VDS = 30V, ID = 1.5A
gfs
--
3.7
--
S
Qg
--
19
--
Qgs
--
4
--
Qgd
--
7.6
--
Ciss
--
696
--
Coss
--
65
--
Crss
--
10.2
--
Rg
--
3.2
--
td(on)
--
48
--
tr
--
36
--
td(off)
--
106
--
tf
--
41
--
Dynamic
(Note 6)
Total Gate Charge
VDS = 640V, ID = 3A,
Gate-Source Charge
VGS = 10V
Gate-Drain Charge
Input Capacitance
VDS = 25V, VGS = 0V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Switching
f = 1.0MHz
F = 1MHz, open drain
nC
pF
Ω
(Note 7)
Turn-On Delay Time
Turn-On Rise Time
VGS = 10V, ID = 3A,
Turn-Off Delay Time
VDD = 400V, RG =25Ω
Turn-Off Fall Time
Source-Drain Diode
ns
(Note 5)
Source Current
Integral reverse diode
IS
--
--
3
A
Source Current (Pulse)
in the MOSFET
ISM
--
--
12
A
Diode Forward Voltage
IS = 3A, VGS = 0V
VSD
--
--
1.5
V
Reverse Recovery Time
VGS = 0V, IS =3A,
trr
--
370
--
ns
Reverse Recovery Charge
dIF/dt = 100A/us
Qrr
--
1.8
--
µC
Notes:
1.
Current limited by package
2.
Pulse width limited by the maximum junction temperature
3.
L = 10mH, IAS = 3A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C
4.
ISD ≤ 3A, dI/dt ≤ 200A/uS, VDD ≤ BVDSS, Starting TJ = 25ºC
5.
Pulse test: PW ≤ 300µs, duty cycle ≤ 2%
6.
For DESIGN AID ONLY, not subject to production testing.
7.
Switching time is essentially independent of operating temperature.
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Document Number: DS_P0000084
2
Version: D15
TSM3N80
Taiwan Semiconductor
ORDERING INFORMATION
PACKAGE
PACKING
TSM3N80CZ C0G
PART NO.
TO-220
50pcs / Tube
TSM3N80CI C0G
TSM3N80CH C5G
ITO-220
50pcs / Tube
TO-251 (IPAK)
75pcs / Tube
TSM3N80CP ROG
TO-252 (DPAK)
2,500pcs / 13” Reel
Note:
1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
2. Halogen-free according to IEC 61249-2-21 definition
Document Number: DS_P0000084
3
Version: D15
TSM3N80
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
Document Number: DS_P0000084
4
Version: D15
TSM3N80
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
Drain Current vs. Case Temperature
BVDSS vs. Junction Temperature
Maximum Safe Operating Area(TO-220, I/D-PAK)
Capacitance vs. Drain-Source Voltage
Maximum Safe Operating Area(ITO-220)
Document Number: DS_P0000084
5
Version: D15
TSM3N80
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-220, I/D-PAK)
Normalized Thermal Transient Impedance, Junction-to-Ambient (ITO-220)
Document Number: DS_P0000084
6
Version: D15
TSM3N80
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
TO-220
MARKING DIAGRAM
Y = Year Code
M = Month Code for Halogen Free Product
O =Jan P =Feb Q =Mar R =Apr
S =May T =Jun U =Jul
V =Aug
W =Sep X =Oct
Y =Nov Z =Dec
L = Lot Code (1~9, A~Z)
Document Number: DS_P0000084
7
Version: D15
TSM3N80
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
ITO-220
MARKING DIAGRAM
G
Y
WW
F
= Halogen Free
= Year Code
= Week Code (01~52)
= Factory Code
Document Number: DS_P0000084
8
Version: D15
TSM3N80
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
TO-251(IPAK)
MARKING DIAGRAM
Y = Year Code
M = Month Code for Halogen Free Product
O =Jan P =Feb Q =Mar R =Apr
S =May T =Jun U =Jul
V =Aug
W =Sep X =Oct
Y =Nov Z =Dec
L = Lot Code (1~9, A~Z)
Document Number: DS_P0000084
9
Version: D15
TSM3N80
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
TO-252(DPAK)
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
Y = Year Code
M = Month Code for Halogen Free Product
O =Jan P =Feb Q =Mar R =Apr
S =May T =Jun U =Jul
V =Aug
W =Sep X =Oct
Y =Nov Z =Dec
L = Lot Code (1~9, A~Z)
Document Number: DS_P0000084
10
Version: D15
TSM3N80
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_P0000084
11
Version: D15