TSM340N06 60V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 60 V RDS(on) (max) VGS = 10V 34 VGS = 4.5V 40 Qg TO-251S (IPAK) mΩ 16.6 nC TO-252 (DPAK) Block Diagram Ordering Information Part No. Package Packing TSM340N06CI C0G ITO-220 50pcs / Tube TSM340N06CZ C0G TO-220 50pcs / Tube TSM340N06CH X0G TO-251S 75pcs / Tube TSM340N06CP ROG TO-252 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds N-Channel MOSFET Absolute Maximum Ratings (Tc = 25°C unless otherwise noted) Parameter Symbol Limit IPAK/DPAK ITO-220 TO-220 Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V 30 A 19 A Tc = 25°C Continuous Drain Current (Note 1) Tc = 100°C (Note 2) ID IDM 120 A Single Pulse Avalanche Energy (Note 3) EAS 24 mJ Single Pulse Avalanche Current (Note 2) IAS 22 A Pulsed Drain Current Total Power Dissipation @ TC = 25°C PD Operating Junction Temperature TJ 150 °C TSTG -55 to +150 °C Storage Temperature Range 1/9 40 27 66 W Version: D14 TSM340N06 60V N-Channel Power MOSFET Thermal Performance Parameter Symbol Thermal Resistance - Junction to Case RӨJC Thermal Resistance - Junction to Ambient RӨJA Limit IPAK/DPAK ITO-220 TO-220 3.1 4.7 1.9 Unit °C/W 62 °C/W Electrical Specifications (TC = 25℃ unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit BVDSS 60 -- -- V -- 28 34 -- 33 40 1.2 1.7 2.5 -- -- 1 -- -- 10 IGSS -- -- ±100 nA gfs -- 8 -- S Qg -- 16.6 -- Qgs -- 2.2 -- Qgd -- 3.9 -- Ciss -- 1180 -- Coss -- 68 -- Crss -- 45 -- Rg -- 2.1 -- td(on) -- 4.6 -- tr -- 14.8 -- td(off) -- 27.2 -- tf -- 7.8 -- IS -- -- 25 A ISM -- -- 100 A VGS = 0V, IS = 1A VSD -- -- 1 V VGS = 0V, IS = 1A dIF/dt = 100A/µs trr -- 17 -- ns Reverse Recovery Charge Qrr Note: 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. L = 0.1mH, IAS = 22A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2% 5. Switching time is essentially independent of operating temperature. -- 12 -- nC Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage VGS = 0V, ID = 250µA VGS = 10V, ID = 15A VGS = 4.5V, ID = 10A VDS = VGS, ID = 250µA Zero Gate Voltage Drain Current VDS = 60V, VGS = 0V VDS = 48V, TJ = 125°C Gate Body Leakage VGS = ±20V, VDS = 0V Forward Transconductance VDS = 10V, ID = 8A RDS(ON) VGS(TH) IDSS mΩ V µA Dynamic Total Gate Charge (Note 4,5) Gate-Source Charge (Note 4,5) (Note 4,5) Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 30V, ID = 20A, VGS = 10V VDS = 30V, VGS = 0V, f = 1MHz VGS=0V, VDS=0V, f=1MHz nC pF Ω Switching Turn-On Delay Time Turn-On Rise Time (Note 4,5) Turn-Off Delay Time Turn-Off Fall Time (Note 4,5) (Note 4,5) VDD=30V , VGS=10V , RG=6W, ID=-1A (Note 4,5) ns Source-Drain Diode Ratings and Characteristic Continuous Drain-Source Diode VG=VD=0V , Force Current Pulse Drain-Source Diode Diode-Source Forward Voltage Reverse Recovery Time (Note 4) (Note 4) 2/9 Version: D14 TSM340N06 60V N-Channel Power MOSFET Electrical Characteristics Curve Normalized RDSON vs. TJ ID, Continuous Drain Current (A) Normalized On Resistance (mW) Continuous Drain Current vs. Tc TJ, Junction Temperature (°C) TC, Case Temperature (°C) Gate Charge Waveform VGS, Gate to Source Voltage (V) Normalized Gate Threshold Voltage Normalized Vth vs. TJ Qg, Gate Charge (nC) TJ , Junction Temperature (°C) Maximum Safe Operation Area (ITO-220) ID, Continuous Drain Current (A) Normalized Thermal Response (RθJC) Normalized Transient Impedance (ITO-220) VDS , Drain to Source Voltage (V) Square Wave Pulse Duration (s) 3/9 Version: D14 TSM340N06 60V N-Channel Power MOSFET Electrical Characteristics Curve Maximum Safe Operation Area (TO-220) ID, Continuous Drain Current (A) Normalized Thermal Response (RθJC) Normalized Transient Impedance (TO-220) VDS, Drain to Source Voltage (V) Square Wave Pulse Duration (s) Maximum Safe Operation Area (TO-251S) ID, Continuous Drain Current (A) Normalized Thermal Response (RθJC) Normalized Transient Impedance (TO-251S) VDS, Drain to Source Voltage (V) Square Wave Pulse Duration (s) Maximum Safe Operation Area (TO-252) ID, Continuous Drain Current (A) Normalized Thermal Response (RθJC) Normalized Transient Impedance (TO-252) VDS, Drain to Source Voltage (V) Square Wave Pulse Duration (s) 4/9 Version: D14 TSM340N06 60V N-Channel Power MOSFET TO-220 Mechanical Drawing Unit: Millimeters Marking Diagram G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code 5/9 Version: D14 TSM340N06 60V N-Channel Power MOSFET ITO-220 Mechanical Drawing Unit: Millimeters Marking Diagram G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code 6/9 Version: D14 TSM340N06 60V N-Channel Power MOSFET TO-251S Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 7/9 Version: D14 TSM340N06 60V N-Channel Power MOSFET TO-252 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 8/9 Version: D14 TSM340N06 60V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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