VS-VSKCU300/06PbF Datasheet

VS-VSKCU300/06PbF
www.vishay.com
Vishay Semiconductors
Ultrafast Diodes, 300 A
(INT-A-PAK Power Modules)
FEATURES
• Electrically insulated by DBC ceramic
• 3500 VRMS isolating voltage
• Standard JEDEC® package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
• Case style INT-A-PAK
INT-A-PAK
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
IF(AV) at TC
300 A at 48 °C
Type
Modules - Diode, High Voltage
Package
INT-A-PAK
Circuit
Two diodes common cathode



ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
VR
Continuous forward current per leg
IF
Single pulse forward current
Maximum power dissipation per leg
Operating junction and storage
temperature range
RMS insulation voltage
IFSM
PD
TEST CONDITIONS
UNITS
600
V
TC = 25 °C
435
TC = 100 °C
230
Limited by junction temperature
TBD
TC = 25 °C
781
TC = 100 °C
313
TJ, TStg
VINS
VALUES
A
W
-40 to 150
°C
3500
V
50 Hz, circuit to base, 
all terminals shorted, t = 1 s
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Cathode to anode breakdown voltage
SYMBOL
VBR
Forward voltage drop per leg
VFM
Maximum reverse leakage current
IRM
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
IF = 150 A
-
1.23
1.53
IF = 300 A
-
1.43
1.96
IF = 150 A, TJ = 125 °C
-
1.11
1.29
IF = 300 A, TJ = 125 °C
-
1.39
1.73
TJ = 150 °C, VR = 600 V
-
-
50
IR = 500 μA
UNITS
V
mA
Revision: 11-Apr-14
Document Number: 93155
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKCU300/06PbF
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
Peak recovery current
Irr
Reverse recovery charge
Qrr
Peak rate of recovery current
dI(rec)M/dt
Softness factor per leg
s
TEST CONDITIONS
MIN.
TYP.
MAX.
TJ = 25 °C
-
130
165
TJ = 125 °C
-
195
260
TJ = 25 °C
ns
-
11
18
-
20
30
-
670
1485
TJ = 125 °C
-
1800
3900
TJ = 125 °C
-
-
400
IF = 50 A
dI/dt = 200 A/μs
VR = 400 V (per leg)
TJ = 125 °C
TJ = 25 °C
IF = 50 A, TJ = 25 °C, dI/dt = 400 A/μs, VR = 200 V
-
0.2
-
IF = 50 A, TJ = 125 °C, dI/dt = 400 A/μs, VR = 200 V
-
0.22
-
UNITS
A
nC
A/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating and
storage temperature range
TEST CONDITIONS
TJ, TStg
VALUES
UNITS
-40 to 150
°C
Maximum thermal resistance,
junction to case per leg
RthJC
DC operation
0.16
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth and greased
0.05
K/W
to heatsink
Mounting
torque ± 10 %
A mounting compound is recommended and
the torque should be rechecked after a period of
3 hours to allow the spread of the compound.
busbar
4 to 6
Nm
200
g
7.1
oz.
Approximate weight
INT-A-PAK
100
1000
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
Case style
TJ = 150 °C
100
TJ = 25 °C
10
1
0
93155_01
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
TJ = 150 °C
10
1
0.1
0.01
0.001
100
93155_02
TJ = 25 °C
200
300
400
500
600
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 11-Apr-14
Document Number: 93155
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKCU300/06PbF
www.vishay.com
Vishay Semiconductors
Allowable Case Temperature (°C)
160
140
120
100
DC
80
60
40
Square wave (D = 0.50)
20
0
0
100
200
300
400
500
IF(AV) - Average Forward Current (A)
93155_03
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Maximum Allowable Case Temperature vs. Average Forward Current
1
0.1
0.01
Single pulse
(thermal resistance)
0.001
0.00001
0.0001
0.001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
93155_04
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1000
900
VR = 400 V
700
RMS limit
600
500
trr (ns)
Average Power Loss (W)
800
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
400
300
200
100
IF = 50 A, TJ = 25 °C
100
0
0
93155_05
100
200
300
400
10
100
500
IF(AV) - Average Forward Current (A)
Fig. 5 - Forward Power Loss Characteristics
93155_06
1000
dIF/dt (A/μs)
Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg)
Revision: 11-Apr-14
Document Number: 93155
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKCU300/06PbF
www.vishay.com
Vishay Semiconductors
100
10 000
VR = 400 V
Irr (A)
Qrr (nC)
VR = 400 V
1000
10
IF = 50 A, TJ = 25 °C
IF = 50 A, TJ = 25 °C
100
100
93155_07
1
100
1000
dIF/dt (A/μs)
1000
dIF/dt (A/μs)
93155_08
Fig. 7 - Typical Reverse Recovery Charge vs. dIF/dt (Per Leg)
Fig. 8 - Typical Reverse Recovery Current vs. dIF/dt (Per Leg)
ORDERING INFORMATION TABLE
Device code
VS-VS KC
1
2
U
300
06
PbF
3
4
5
6
1
-
Vishay Semiconductors product
2
-
Circuit configuration:
C = 2 diodes common cathode
3
-
U = Ultrafast diode
4
-
Current rating (300 = 300 A)
5
-
Voltage rating (06 = 600 V)
6
-
PbF = Lead (Pb)-free
CIRCUIT CONFIGURATION
(1)
+
(2)
(3)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95254
Revision: 11-Apr-14
Document Number: 93155
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
INT-A-PAK DBC
28 (1.10)
9 (0.33)
30 (1.18)
DIMENSIONS in millimeters (inches)
Ø 6.5 (Ø 0.25)
80 (3.15)
23 (0.91)
7
6
5
4
14.5
23 (0.91)
(0.57)
35 (1.38)
17 (0.67)
1
2
3
66 (2.60)
37 (1.44)
3 screws M6 x 10
94 (3.70)
Document Number: 95254
Revision: 11-Dec-07
For technical questions, contact: [email protected]
www.vishay.com
1
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Revision: 02-Oct-12
1
Document Number: 91000