VS-VSUD410CW60 www.vishay.com Vishay Semiconductors FRED Pt® Ultrafast Soft Recovery Diode Module, 400 A Lug terminal anode 1 FEATURES Lug terminal anode 2 • Ultrafast recovery • Designed for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Base common cathode TO-244 BENEFITS • Reduced RFI and EMI • Higher frequency operation • Reduced snubbing PRODUCT SUMMARY • Reduced parts count IF(AV) 400 A VR 600 V Qrr (typical) 5000 nC trr 164 ns Type Modules - Diode, FRED Pt® DESCRIPTION FRED Pt® diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Continuous forward current per diode Single pulse forward current per diode Maximum power dissipation Operating junction and storage temperatures SYMBOL TEST CONDITIONS MAX. UNITS 600 V VR IF(DC) TC = 25 °C 572 TC = 85 °C 397 TC = 137 °C 200 IFSM PD A 1200 TC = 25 °C 789 TC = 137 °C 200 TJ, TStg W -40 to +175 °C ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage Forward voltage SYMBOL VBR VFM TEST CONDITIONS IR = 100 μA MIN. TYP. MAX. 600 - - IF = 200 A - 1.0 1.2 IF = 400 A - 1.12 1.37 IF = 200 A, TJ = 175 °C - 0.83 1.0 IF = 400 A, TJ = 175 °C - 0.98 1.21 UNITS V Reverse leakage current IRM TJ = 175 °C, VR = VR rated - 0.3 3.0 mA Series inductance LS From top of terminal hole to mounting plane - 5 - nH Revision: 09-Sep-14 Document Number: 93622 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSUD410CW60 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge MIN. TYP. MAX. TJ = 25 °C TEST CONDITIONS - 215 - TJ = 150 °C - 432 - - 48 - - 70 - IF = 50 A, dIF/dt = 500 A/μs, VR = 200 V TJ = 25 °C TJ = 150 °C Qrr TJ = 25 °C - 5.1 - TJ = 150 °C - 15.1 - UNITS ns A μC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL per leg Thermal resistance, junction to case RthJC per module Thermal resistance, case to heatsink RthCS MIN. TYP. MAX. - - 0.19 - - 0.095 - 0.10 - UNITS °C/W - 68 - g - 2.4 - oz. Mounting torque 30 (3.4) - 40 (4.6) Mounting torque center hole 12 (1.4) - 18 (2.1) Terminal torque Weight 30 (3.4) - 40 (4.6) Vertical pull - - 80 2" lever pull - - 35 Case style lbf · in TO-244 (TO-244AB) 1000 1000 TJ = 175 °C Reverse Current - IR (μA) Instaneous Forward Current (A) lbf · in (N · m) TJ = 175 °C 100 TJ = 25 °C 10 TJ = 150 °C 100 TJ = 150 °C 10 1 0.1 TJ = 25 °C 0.01 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage Drop - VF Fig. 1 - Typical Forward Voltage Drop vs. Instantaneous Forward Current (Per Leg) 0 100 200 300 400 500 600 Reverse Voltage - VR (V) Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Leg) Revision: 09-Sep-14 Document Number: 93622 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSUD410CW60 Vishay Semiconductors 180 500 160 450 140 VR = 200 V IF = 50 A 400 DC 120 TJ = 150 °C 350 100 trr (ns) Allowable Case Temperature (°C) www.vishay.com 80 60 300 250 200 Square wave (D = 0.50) rated VR applied 40 TJ = 25 °C 150 20 100 0 50 0 100 200 300 400 500 600 100 1000 dIF/dt (A/μs) Current Rating (A) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt 360 18 000 320 16 000 280 VR = 200 V IF = 50 A 14 000 RMS Limit 240 12 000 200 D = 0.20 160 D = 0.25 Qrr (nC) Forward Power Loss (W) Fig. 3 - Maximum Current Rating Capability (Per Leg) 10 000 D = 0.33 120 TJ = 150 °C 8000 6000 D = 0.50 80 D = 0.75 4000 40 DC 2000 0 0 40 TJ = 25 °C 0 100 80 120 160 200 240 280 320 360 Forward Current (A) 1000 dIF/dt (A/μs) Fig. 4 - Forward Power Loss Characteristics Fig. 6 - Typical Reverse Recovery Charge vs. dIF/dt 100 90 VR = 200 V IF = 50 A 80 TJ = 150 °C IRR (A) 70 60 50 40 TJ = 25 °C 30 20 10 0 100 1000 dIF/dt (A/μs) Fig. 7 - Typical Reverse Recovery Current vs. dIF/dt Revision: 09-Sep-14 Document Number: 93622 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSUD410CW60 www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC 0.01 Single Pulse Thermal Resistance 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 8 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) VR = 200 V 0.01 Ω L = 70 μH D.U.T. D dIF/dt adjust IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit ORDERING INFORMATION TABLE Device code VS-VS UD 410 C W 60 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - UD = FRED Pt® 3 - Current rating (410 = 400 A) 4 - Circuit configuration: 5 - W = TO-244 wire bondable not isolated 6 - Voltage rating (60 = 600 V) C = common cathode Revision: 09-Sep-14 Document Number: 93622 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSUD410CW60 www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING Lug terminal anode 1 Common cathode Lug terminal anode 2 C Base common cathode LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95021 Revision: 09-Sep-14 Document Number: 93622 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-244 DIMENSIONS in millimeters (inches) 35 (1.37) REF. 13 (0.51) 7 (0.27) 6 (0.23) 17.5 (0.69) 16.5 (0.65) 40 (1.57) 80 (3.15) Ø 5.2 (Ø 0.20) 3 12.6 (0.5) Ø 7.2 (Ø 0.28) (2 places) 3 1 2 21 (0.82) 20 (0.78) ¼" - 20 UNC 9.6 (0.37) MIN. 93 (3.66) MAX. Revision: 24-Apr-15 Document Number: 95021 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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