VS-VSUD405CW60 www.vishay.com Vishay Semiconductors FRED Pt® Ultrafast Soft Recovery Diode, 400 A FEATURES • Ultrafast recovery Terminal anode 1 Terminal anode 2 • UL approved file E222165 • Designed for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Base common cathode TO-244 BENEFITS • Reduced RFI and EMI • Higher frequency operation • Reduced snubbing PRODUCT SUMMARY • Reduced parts count IF(AV) 400 A VR 600 V Qrr (typical) 5000 nC trr 124 ns Type Modules - Diode, FRED Pt® DESCRIPTION FRED Pt® diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Continuous forward current per diode SYMBOL MAX. UNITS 600 V VR IF(DC) Single pulse forward current per diode IFSM Maximum power dissipation per diode PD Operating junction and storage temperatures TEST CONDITIONS TC = 25 °C 480 TC = 85 °C 338 TC = 132 °C 200 TC = 25 °C 2700 TC = 25 °C 789 TC = 124 °C 270 TJ, TStg A W -40 to +175 °C ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage SYMBOL VBR TEST CONDITIONS IR = 100 μA MIN. TYP. MAX. 600 - - IF = 200 A - 1.13 1.36 IF = 400 A - 1.27 1.72 IF = 200 A, TJ = 175 °C - 0.92 - UNITS V Forward voltage VFM IF = 400 A, TJ = 175 °C - 1.07 - Reverse leakage current IRM TJ = 175 °C, VR = VR rated - 0.6 3.0 mA Series inductance LS From top of terminal hole to mounting plane - 5 - nH Revision: 06-Aug-14 Document Number: 94687 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSUD405CW60 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge MIN. TYP. MAX. TJ = 25 °C TEST CONDITIONS - 124 - TJ = 125 °C - 222 - - 24 - - 45 - TJ = 25 °C - 1466 - TJ = 125 °C - 5000 - IF = 50 A, dIF/dt = 500 A/μs, VR = 200 V TJ = 25 °C TJ = 125 °C Qrr UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Thermal resistance, junction to case Thermal resistance, case to heatsink per diode per module per module RthJC RthCS Weight MIN. TYP. MAX. - - 0.19 - - 0.095 - 0.10 - - 68 - g - 2.4 - oz. Mounting torque 30 (3.4) - 40 (4.6) Mounting torque center hole 12 (1.4) - 18 (2.1) Terminal torque 30 (3.4) - 40 (4.6) Vertical pull - - 80 2" lever pull - - 35 °C/W lbf · in (N · m) lbf · in TO-244 (TO-244AB) 1000 1000 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) Case style UNITS TJ = 175 °C 100 TJ = 125 °C 10 TJ = 25 °C TJ = 175 °C 100 TJ = 125 °C 10 1 0.1 TJ = 25 °C 0.01 0.001 1 0 0.5 1.0 1.5 2.0 2.5 0 100 200 300 400 500 600 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Leg) Revision: 06-Aug-14 Document Number: 94687 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSUD405CW60 Vishay Semiconductors 180 8000 160 7000 140 VR = 200 V IF = 50 A 6000 120 5000 100 Qrr (nC) Allowable Case Temperature (°C) www.vishay.com DC 80 Square wave (D = 0.50) rated VR applied 60 TJ = 125 °C 4000 3000 2000 40 20 1000 0 0 0 50 100 150 200 250 300 350 400 450 500 TJ = 25 °C 100 1000 dIF/dt (A/μs) IF(AV) - Average Forward Current (A) Fig. 6 - Typical Reverse Recovery Charge vs. dIF/dt Fig. 3 - Maximum Current Rating Capability (Per Leg) 60 400 RMS limit VR = 200 V IF = 50 A 50 320 280 40 240 Irr (A) Average Power Loss (W) 360 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC 200 160 120 80 TJ = 125 °C 30 20 TJ = 25 °C 10 40 0 0 trr (ns) 0 40 80 120 160 200 240 280 320 360 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/μs) Fig. 4 - Forward Power Loss Characteristics Fig. 7 - Typical Reverse Recovery Current vs. dIF/dt) 360 340 320 300 280 260 240 220 200 180 160 140 120 100 80 VR = 200 V IF = 50 A TJ = 125 °C TJ = 25 °C 100 1000 dIF/dt (A/μs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt Revision: 06-Aug-14 Document Number: 94687 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSUD405CW60 www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC 0.01 Single Pulse Thermal Resistance 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 8 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit ORDERING INFORMATION TABLE Device code VS-VS UD 2 1 405 C W 60 3 4 5 6 1 - Vishay Semiconductors product 2 - UD = FRED Pt® 3 - Current rating (405 = 400 A) 4 - Circuit configuration: C = Common cathode 5 - W = TO-244 wire bondable not isolated 6 - Voltage rating (60 = 600 V) Revision: 06-Aug-14 Document Number: 94687 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSUD405CW60 www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING Terminal anode 1 Common cathode Terminal anode 2 C Base common cathode LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95021 Revision: 06-Aug-14 Document Number: 94687 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-244 DIMENSIONS in millimeters (inches) 35 (1.37) REF. 13 (0.51) 7 (0.27) 6 (0.23) 17.5 (0.69) 16.5 (0.65) 40 (1.57) 80 (3.15) Ø 5.2 (Ø 0.20) 3 12.6 (0.5) Ø 7.2 (Ø 0.28) (2 places) 3 1 2 21 (0.82) 20 (0.78) ¼" - 20 UNC 9.6 (0.37) MIN. 93 (3.66) MAX. Revision: 24-Apr-15 Document Number: 95021 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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