VS-P400 Series Datasheet

VS-P400 Series
www.vishay.com
Vishay Semiconductors
Power Modules,
Passivated Assembled Circuit Elements, 40 A
FEATURES
• Glass passivated junctions for greater reliability
• Electrically isolated base plate
• Available up to 1200 VRRM/VDRM
• High dynamic characteristics
• Wide choice of circuit configurations
• Simplified mechanical design and assembly
• UL E78996 approved
PACE-PAK (D-19)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
DESCRIPTION
IO
40 A
Type
Modules - Thyristor, Standard
Package
PACE-PAK (D-19)
Circuit
Single phase, hybrid bridge common cathode,
Single phase, hybrid bridge doubler connection,
Single phase, all SCR bridge
The VS-P400 series of integrated power circuits consists of
power thyristors and power diodes configured in a single
package. With its isolating base plate, mechanical designs
are greatly simplified giving advantages of cost reduction
and reduced size.
Applications include power supplies, control circuits and
battery chargers.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
UNITS
A
IO
80 °C
40
ITSM,
IFSM
50 Hz
385
60 Hz
400
50 Hz
745
60 Hz
680
7450
A2s
Range
400 to 1200
V
2500
V
-40 to 125
°C
VRRM/VDRM, MAXIMUM
REPETITIVE PEAK REVERSE AND
PEAK OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM MAXIMUM
AT TJ MAXIMUM
mA
VS-P401, VS-P421, VS-P431
400
500
VS-P402, VS-P422, VS-P432
600
700
VS-P403, VS-P423, VS-P433
800
900
VS-P404, VS-P424, VS-P434
1000
1100
VS-P405, VS-P425, VS-P435
1200
1300
I2t
I2t
VRRM
VISOL
TJ
TStg
A
A2s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
10
Revision: 27-Mar-14
Document Number: 93755
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VS-P400 Series
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ON-STATE CONDUCTION
PARAMETER
Maximum DC output current
at case temperature
SYMBOL
IO
TEST CONDITIONS
Full bridge circuits
t = 10 ms
Maximum peak, one-cycle
non-repetitive on-state or
forward current
ITSM,
IFSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
Maximum I2t for fusing
I2t
I2t
VALUES
UNITS
40
A
80
°C
385
No voltage
reapplied
400
325
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
340
745
t = 8.3 ms
No voltage
reapplied
t = 10 ms
100 % VRRM
530
t = 8.3 ms
reapplied
480
680
t = 0.1 ms to 10 ms, no voltage reapplied
I2t for time tx = I2t · tx
A
7450
Low level value of threshold voltage
VT(TO)1
(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum
0.83
High level value of threshold voltage
VT(TO)2
(I >  x IT(AV)), TJ = TJ maximum
1.03
Low level value of on-state slope resistance
rt1
(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum
9.61
High level value of on-state slope resistance
rt2
(I >  x IT(AV)), TJ = TJ maximum
7.01
A2s
A2s
V
m
Maximum on-state voltage drop
VTM
ITM =  x IT(AV)
TJ = 25 °C
1.4
V
Maximum forward voltage drop
VFM
IFM =  x IF(AV)
TJ = 25 °C
1.4
V
Maximum non-repetitive rate of rise of
turned-on current
dI/dt
TJ = 125 °C from 0.67 VDRM
ITM =  x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs
200
A/μs
Maximum holding current
IH
Maximum latching current
IL
TJ = 25 °C anode supply = 6 V, resistive load
130
250
mA
BLOCKING
PARAMETER
SYMBOL
VALUES
UNITS
TJ = 125 °C, exponential to 0.67 VDRM gate open
200
V/μs
IRRM,
IDRM
TJ = 125 °C, gate open circuit
10
mA
IRRM
TJ = 25 °C
100
μA
VISOL
50 Hz, circuit to base, all terminals shorted,
TJ = 25 °C, t = 1 s
2500
V
VALUES
UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt
Maximum peak reverse and off-state
leakage current at VRRM, VDRM
Maximum peak reverse leakage current
RMS isolation voltage
TEST CONDITIONS
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
Maximum gate voltage required to trigger
SYMBOL
TEST CONDITIONS
PGM
8
PG(AV)
2
IGM
2
A
-VGM
10
V
VGT
TJ = - 40 °C
3
TJ = 25 °C
2
TJ = 125 °C
TJ = - 40 °C
Maximum gate current required to trigger
W
IGT
Maximum gate voltage that will not trigger
VGD
Maximum gate current that will not trigger
IGD
Anode supply =
6 V resistive load
1
90
TJ = 25 °C
60
TJ = 125 °C
35
TJ = 125 °C, rated VDRM applied
V
mA
0.2
V
2
mA
Revision: 27-Mar-14
Document Number: 93755
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-P400 Series
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
-40 to 125
°C
Maximum junction operating
and storage temperature range
TJ, TStg
Maximum thermal resistance,
junction to case per junction
RthJC
DC operation
1.05
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
0.10
K/W
Mounting torque, base to heatsink (1)
4
Approximate weight
Nm
58
g
2.0
oz.
Case style
PACE-PAK (D-19)
Note
(1) A mounting compound is recommended and the torque should be checked after a period of 3 hours to allow for the spread of the compound
120
+
Maximum Total Power Loss (W)
Maximum Total Power Loss (W)
120
~
100
80
180°
(sine)
60
40
TJ = 125 °C
20
100
R
th
SA
1K
=
/W
80
1.5
60
0.
7
K/
W
K/W
2K
-Δ
R
/W
3 K/W
40
5 K/W
20
10 K/W
0
0
0
5
10
15
20
25
30
35
Total Output Current (A)
93755_01a
0
40
25
50
75
100
125
Maximum Allowable
Ambient Temperature (°C)
93755_01b
Fig. 1 - Current Ratings Nomogram (1 Module Per Heatsink)
40
25
180°
120°
90°
60°
30°
20
15
RMS limit
10
Ø
Conduction angle
TJ = 125 °C
Per junction
5
Maximum Average On-State
Power Loss (W)
Maximum Average On-State
Power Loss (W)
30
0
DC
180°
120°
90°
60°
30°
30
25
20
RMS limit
15
Ø
10
Conduction period
TJ = 125 °C
Per junction
5
0
0
93755_02
35
5
10
15
20
Average On-State Current (A)
Fig. 2 - On-State Power Loss Characteristics
0
93755_03
5
10
15
20
25
30
35
Average On-State Current (A)
Fig. 3 - On-State Power Loss Characteristics
Revision: 27-Mar-14
Document Number: 93755
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-P400 Series
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350
130
120
180°
(Rect.)
110
100
180°
(Sine)
90
80
300
275
250
225
200
175
Per module
70
Per junction
150
0
5
10
15
20
25
30
35
40
45
1
Total Output Current (A)
93755_04
10
100
Number of Equal Amplitude Half
Cycle Current Pulses (N)
93755_06
Fig. 4 - Current Ratings Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
1000
400
Maximum non-repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
TJ = 25 °C
Peak Half Sine Wave
On-State Current (A)
Instantaneous On-State Current (A)
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
325
Peak Half Sine Wave
On-State Current (A)
Maximum Allowable Case
Temperature (°C)
Fully turned-on
TJ = 125 °C
100
10
350
300
250
200
Per junction
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Per junction
150
0.01
5.0
Instantaneous On-State Voltage (V)
93755_05
0.1
1
Pulse Train Duration (s)
93755_07
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 5 - On-State Voltage Drop Characteristics
ZthJC - Transient Thermal
Impedance (K/W)
10
Steady state value
RthJC = 1.05 K/W
(DC operation)
1
Per junction
0.1
0.01
0.0001
93755_08
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Revision: 27-Mar-14
Document Number: 93755
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-P400 Series
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Instantaneous Gate Voltage (V)
100
10
(1) PGM = 10 W, tp = 5 ms
(2) PGM = 20 W, tp = 25 ms
(3) PGM = 50 W, tp = 1 ms
(4) PGM = 100 W, tp = 500 μs
Rectangular gate pulse
(a) Recommended load line for
rated dI/dt: 10 V, 20 Ω, tr ≤ 1 μs
(b) Recommended load line for
rated dI/dt: 10 V, 65 Ω, tr ≤ 1 μs
(a)
(b)
0.1
0.001
TJ = 40 °C
VGD
TJ = 25 °C
TJ = 125 °C
1
(1)
(2)
(3)
(4)
Frequency limited by PG(AV)
IGD
0.01
0.1
1
10
100
Instantaneous Gate Current (A)
93755_09
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
P
4
0
2
K
W
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Module type
3
-
Current rating
1 = 25 A DC (P100 Series)
4 = 40 A DC (P400 Series)
4
-
Circuit configuration
0 = Single Phase, Hybrid Bridge Common Cathode
2 = Single Phase, Hybrid Bridge Doubler Connection
3 = Single Phase, all SCR Bridge
5
-
Voltage code
1 = 400 V
2 = 600 V
3 = 800 V
4 = 1000 V
5 = 1200 V
6
-
K = Optional Voltage Suppression
7
-
W = Optional Freewheeling Diode
Revision: 27-Mar-14
Document Number: 93755
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-P400 Series
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CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
CIRCUIT
CONFIGURATION
CODE
SCHEMATIC DIAGRAM
TERMINAL POSITIONS
G1
AC1
Single phase, hybrid bridge
common cathode
AC2
0
AC1 G1
-
AC2 G2
+
AC1 G1
-
AC2 G2
+
G2
(-)
(+)
G1
G2
AC2
Single phase, hybrid bridge
doubler connection
AC1
2
(-)
(+)
G3
G1
AC1
Single phase, all SCR bridge
AC2 G2
G1 G4
AC1 G3 +
AC2
3
G4
G2
(-)
CODING
(+)
(1)
CIRCUIT
CONFIGURATION
CODE
BASIC
SERIES
WITH VOLTAGE
SUPPRESSION
WITH
FREEWHEELING
DIODE
WITH BOTH
VOLTAGE SUPPRESSION
AND FREEWHEELING
DIODE
Single phase, hybrid bridge
common cathode
0
P40.
P40.K
P40.W
P40.KW
Single phase, hybrid bridge
doubler connection
2
P42.
P42.K
-
-
Single phase, all SCR bridge
3
P43.
P43.K
-
-
CIRCUIT DESCRIPTION
Note
(1) To complete code refer to Voltage Ratings table, i.e.: For 600 V P40.W complete code is P402W
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95335
Revision: 27-Mar-14
Document Number: 93755
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
D-19 PACE-PAK
DIMENSIONS in millimeters (inches)
0.9 x 45°
(0.035 x 45°)
12.7 (0.50) 12.7 (0.50)
Ø 1.65 (0.06)
4.6 (0.18)
25 (0.98) MAX.
15.5 (0.61)
MAX.
2.5 (0.10)
MAX.
63.5 (2.50)
45 (1.77)
23.2 (0.91)
Fast-on 6.35 x 0.8 (0.25 x 0.03)
5.2 (0.20)
32.5 (1.28) MAX.
33.8 (1.33)
48.7 (1.91)
Document Number: 95335
Revision: 24-Jul-08
For technical questions, contact: [email protected]
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Revision: 02-Oct-12
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