P400 Series Vishay High Power Products Passivated Assembled Circuit Elements, 40 A FEATURES • Glass passivated junctions for greater reliability • Electrically isolated base plate • Available up to 1200 VRRM/VDRM • High dynamic characteristics • Wide choice of circuit configurations • Simplified mechanical design and assembly • UL E78996 approved PACE-PAK (D-19) • Compliant to RoHS directive 2002/95/EC DESCRIPTION PRODUCT SUMMARY IO 40 A The P400 series of integrated power circuits consists of power thyristors and power diodes configured in a single package. With its isolating base plate, mechanical designs are greatly simplified giving advantages of cost reduction and reduced size. Applications include power supplies, control circuits and battery chargers. MAJOR RATINGS AND CHARACTERISTICS SYMBOL VALUES UNITS IO 80 °C 40 A ITSM, IFSM 50 Hz 385 60 Hz 400 50 Hz 745 60 Hz 680 I2t CHARACTERISTICS I2√t A A2s 7450 A2√s 400 to 1200 V 2500 V - 40 to 125 °C VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE AND PEAK OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM MAXIMUM AT TJ MAXIMUM mA P401, P421, P431 400 500 P402, P422, P432 600 700 P403, P423, P433 800 900 P404, P424, P434 1000 1100 P405, P425, P435 1200 1300 VRRM Range VISOL TJ TStg ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER Document Number: 93755 Revision: 05-Nov-09 For technical questions, contact: [email protected] 10 www.vishay.com 1 P400 Series Vishay High Power Products Passivated Assembled Circuit Elements, 40 A ON-STATE CONDUCTION PARAMETER SYMBOL Maximum DC output current at case temperature IO TEST CONDITIONS ITSM, IFSM t = 8.3 ms t = 10 ms I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing I2√t 40 A 80 °C No voltage reapplied 385 100 % VRRM reapplied 325 400 A t = 10 ms t = 8.3 ms Maximum I2t for fusing UNITS Full bridge circuits t = 10 ms Maximum peak, one-cycle non-repetitive on-state or forward current VALUES No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 340 745 680 480 t = 0.1 ms to 10 ms, no voltage reapplied I2t for time tx = I2√t · √tx 7450 Low level value of threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.83 High level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 1.03 Low level value of on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 9.61 rt2 (I > π x IT(AV)), TJ = TJ maximum 7.01 Maximum on-state voltage drop VTM ITM = π x IT(AV) Maximum forward voltage drop VFM IFM = π x IF(AV) Maximum non-repetitive rate of rise of turned-on current dI/dt TJ = 125 °C from 0.67 VDRM ITM = π x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs Maximum latching current IH IL TJ = 25 °C A2√s V High level value of on-state slope resistance Maximum holding current A2s 530 100 % VRRM reapplied mΩ 1.4 V 200 A/μs 130 TJ = 25 °C anode supply = 6 V, resistive load mA 250 BLOCKING PARAMETER SYMBOL VALUES UNITS TJ = 125 °C, exponential to 0.67 VDRM gate open 200 V/μs IRRM, IDRM TJ = 125 °C, gate open circuit 10 mA Maximum peak reverse leakage current IRRM TJ = 25 °C 100 μA RMS isolation voltage VISOL 50 Hz, circuit to base, all terminals shorted, TJ = 25 °C, t = 1 s 2500 V Maximum critical rate of rise of off-state voltage dV/dt Maximum peak reverse and off-state leakage current at VRRM, VDRM www.vishay.com 2 TEST CONDITIONS For technical questions, contact: [email protected] Document Number: 93755 Revision: 05-Nov-09 P400 Series Passivated Assembled Circuit Elements, 40 A Vishay High Power Products TRIGGERING PARAMETER SYMBOL Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage Maximum gate voltage required to trigger TEST CONDITIONS 8 PG(AV) 2 UNITS W IGM 2 A -VGM 10 V VGT TJ = - 40 °C 3 TJ = 25 °C 2 TJ = 125 °C IGT Maximum gate voltage that will not trigger VGD Maximum gate current that will not trigger IGD V 1 Anode supply = 6 V resistive load TJ = - 40 °C Maximum gate current required to trigger VALUES PGM 90 TJ = 25 °C 60 TJ = 125 °C 35 TJ = 125 °C, rated VDRM applied mA 0.2 V 2 mA VALUES UNITS - 40 to 125 °C THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case per junction RthJC DC operation 1.05 Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.10 K/W Mounting torque, base to heatsink (1) 4 Approximate weight Nm 58 g 2.0 oz. Note (1) A mounting compund is recommended and the torque should be checked after a period of 3 hours to allow for the spread of the compound CIRCUIT TYPE AND CODING (1) CIRCUIT “0” CIRCUIT “2” CIRCUIT “3” AC2 G2 G1 G4 AC1 G3 + AC1 G1 - AC1 G1 - AC2 G2 + AC2 G2 + Terminal positions G1 Schematic diagram G1 G3 G2 G1 AC1 AC2 AC1 AC2 AC1 AC2 G2 (-) (+) G4 (-) (+) (-) G2 (+) Single phase hybrid bridge common cathode Single phase hybrid bridge doubler Single phase all SCR bridge P40. P42. P43. With voltage suppression P40.K P42.K P43.K With freewheeling diode P40.W - - P40.KW - - Basic series With both voltage suppression and freewheeling diode Note To complete code refer to Voltage Ratings table, i.e.: For 600 V P40.W complete code is P402W (1) Document Number: 93755 Revision: 05-Nov-09 For technical questions, contact: [email protected] www.vishay.com 3 P400 Series Vishay High Power Products Passivated Assembled Circuit Elements, 40 A 120 + Maximum Total Power Loss (W) Maximum Total Power Loss (W) 120 ~ 100 80 180° (sine) 60 40 TJ = 125 °C 20 100 = /W 1.5 60 0. 7 K/ W K/W 2K -Δ R /W 3 K/W 40 5 K/W 20 10 K/W 0 0 5 10 15 20 25 30 35 0 40 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 1 - Current Ratings Nomogram (1 Module Per Heatsink) Total Output Current (A) 93755_01a 93755_01b 30 130 180° 120° 90° 60° 30° 20 15 RMS limit 10 Ø Conduction angle TJ = 125 °C Per junction 5 Maximum Allowable Case Temperature (°C) Fully turned-on 25 120 180° (Rect.) 110 100 180° (Sine) 90 80 Per module 0 70 0 5 10 15 20 Average On-State Current (A) 93755_02 0 DC 180° 120° 90° 60° 30° 30 25 20 RMS limit 15 Ø 10 Conduction period TJ = 125 °C Per junction 5 0 0 5 10 15 20 25 30 Fig. 3 - On-State Power Loss Characteristics www.vishay.com 4 15 20 25 30 35 40 45 Total Output Current (A) 1000 TJ = 25 °C TJ = 125 °C 100 35 Average On-State Current (A) 93755_03 10 Fig. 4 - Current Ratings Characteristics Instantaneous On-State Current (A) 40 35 5 93755_04 Fig. 2 - On-State Power Loss Characteristics Maximum Average On-State Power Loss (W) th SA 1K 80 0 Maximum Average On-State Power Loss (W) R 93755_05 10 Per junction 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Instantaneous On-State Voltage (V) Fig. 5 - On-State Voltage Drop Characteristics For technical questions, contact: [email protected] Document Number: 93755 Revision: 05-Nov-09 P400 Series Passivated Assembled Circuit Elements, 40 A 350 400 Peak Half Sine Wave On-State Current (A) 300 Peak Half Sine Wave On-State Current (A) At any rated load condition and with rated VRRM applied following surge. Initial TJ = 125 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 325 275 250 225 200 175 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 °C No voltage reapplied Rated VRRM reapplied 350 300 250 200 Per junction Per junction 150 1 93755_06 Vishay High Power Products 10 150 0.01 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 6 - Maximum Non-Repetitive Surge Current 0.1 1 Pulse Train Duration (s) 93755_07 Fig. 7 - Maximum Non-Repetitive Surge Current ZthJC - Transient Thermal Impedance (K/W) 10 Steady state value RthJC = 1.05 K/W (DC operation) 1 Per junction 0.1 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 93755_08 Fig. 8 - Thermal Impedance ZthJC Characteristics Instantaneous Gate Voltage (V) 100 10 (1) PGM = 10 W, tp = 5 ms (2) PGM = 20 W, tp = 25 ms (3) PGM = 50 W, tp = 1 ms (4) PGM = 100 W, tp = 500 μs Rectangular gate pulse (a) Recommended load line for rated dI/dt: 10 V, 20 Ω, tr ≤ 1 μs (b) Recommended load line for rated dI/dt: 10 V, 65 Ω, tr ≤ 1 μs (a) (b) 0.1 0.001 93755_09 TJ = 40 °C VGD TJ = 25 °C TJ = 125 °C 1 (1) (2) (3) (4) Frequency limited by PG(AV) IGD 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics LINKS TO RELATED DOCUMENTS Dimensions Document Number: 93755 Revision: 05-Nov-09 www.vishay.com/doc?95335 For technical questions, contact: [email protected] www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1