VS-VSKH320-16PbF Series www.vishay.com Vishay Semiconductors SCR/Diode (MAGN-A-PAK Power Modules), 320 A FEATURES • High voltage • Electrically isolated base plate • 3500 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 MAGN-A-PAK DESCRIPTION PRODUCT SUMMARY IT(AV) or IF(AV) 320 A Type Modules - Thyristor, Standard Package MAGN-A-PAK Circuit SCR/diode doubler circuit This new VSK series of MAGN-A-PAK modules uses high voltage power thyristor/thyristor and thyristor/diode in seven basic configurations. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. They can be interconnected to form single phase or three phase bridges or as AC-switches when modules are connected in anti-parallel mode. These modules are intended for general purpose applications such as battery chargers, welders, motor drives, UPS, etc. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IT(AV)/IF(AV) VALUES 70 °C 320 50 Hz 9000 60 Hz 9420 50 Hz 405 60 Hz 370 502 IT(RMS) ITSM/IFSM I2t I2t 4050 VDRM/VRRM TJ Range UNITS A kA2s kA2s 1600 V -40 to +130 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-VSKH320- VOLTAGE CODE VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE AND OFF-STATE BLOCKING VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM/IDRM AT 130 °C MAXIMUM mA 16 1600 1700 50 Revision: 15-Jun-16 Document Number: 94667 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKH320-16PbF Series www.vishay.com Vishay Semiconductors ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current at case temperature (thyristor) IT(AV) Maximum average forward current (diode) IF(AV) Maximum RMS on-state current TEST CONDITIONS IO(RMS) As AC switch ITSM t = 8.3 ms t = 10 ms 100 % VRRM reapplied I2t No voltage reapplied t = 8.3 ms t = 10 ms for fusing 70 °C I2t 9420 7920 405 370 287 kA2s 262 t = 0.1 ms to 10 ms, no voltage reapplied 4050 Low level value or threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.80 High level value of threshold voltage VT(TO)2 (I > x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.03 Low level value on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.75 High level value on-state slope resistance rt2 (I > x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.53 VTM, VFM ITM = x IT(AV), IFM = x IF(AV), TJ = TJ maximum, 180° conduction 1.50 Maximum holding current IH Anode supply = 12 V, initial IT = 30 A, TJ = 25 °C 500 Maximum latching current IL Anode supply = 12 V, resistive load = 1 , gate pulse: 10 V, 100 μs, TJ = 25 °C 1000 Maximum on-state voltage drop A 7570 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied t = 8.3 ms Maximum A 9000 No voltage reapplied t = 8.3 ms I2t 320 704 IRMS t = 10 ms Maximum I2t for fusing UNITS 180° conduction, half sine wave t = 10 ms Maximum peak, one-cycle on-state non-repetitive, surge current VALUES kA2s V m V mA SWITCHING PARAMETER SYMBOL Typical delay time td Typical rise time tr Typical turn-off time tq TEST CONDITIONS TJ = 25 °C, gate current = 1 A dIg/dt = 1 A/μs Vd = 0.67 % VDRM ITM = 300 A; dI/dt = 15 A/μs; TJ = TJ maximum; VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100 VS-VSKH320 UNITS 1.0 2.0 μs 200 to 350 BLOCKING PARAMETER Maximum peak reverse and off-state leakage current RMS insulation voltage Critical rate of rise of off-state voltage SYMBOL IRRM, IDRM VINS dV/dt TEST CONDITIONS TJ = TJ maximum VS-VSKH320 UNITS 50 mA 50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s 3000 V TJ = TJ maximum, exponential to 67 % rated VDRM 1000 V/μs Revision: 15-Jun-16 Document Number: 94667 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKH320-16PbF Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VS-VSKH320 PGM tp 5 ms, TJ = TJ maximum 10.0 Maximum average gate power PG(AV) f = 50 Hz, TJ = TJ maximum 2.0 Maximum peak gate current + IGM tp 5 ms, TJ = TJ maximum 3.0 Maximum peak negative gate voltage - VGT tp 5 ms, TJ = TJ maximum 5.0 Maximum peak gate power VGT W A 4.0 TJ = - 40 °C Maximum required DC gate voltage to trigger UNITS TJ = 25 °C TJ = TJ maximum Anode supply = 12 V, resistive load; Ra = 1 3.0 Anode supply = 12 V, resistive load; Ra = 1 200 V 2.0 350 TJ = - 40 °C Maximum required DC gate current to trigger IGT TJ = 25 °C Maximum gate voltage that will not trigger VGD TJ = TJ maximum, rated VDRM applied 0.25 V Maximum gate current that will not trigger IGD TJ = TJ maximum, rated VDRM applied 10.0 mA Maximum rate of rise of turned-on current dI/dt TJ = TJ maximum, ITM = 400 A, rated VDRM applied 500 A/μs VS-VSKH320 UNITS -40 to +130 °C TJ = TJ maximum mA 100 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction operating and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case per junction RthJC DC operation 0.125 Typical thermal resistance, case to heatsink per module RthCS Mounting surface flat, smooth, and greased 0.02 K/W A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound. MAP to heatsink Mounting torque ± 10 % busbar to MAP 4 to 6 Approximate weight Nm 500 g 17.8 oz. Case style MAGN-A-PAK R CONDUCTION PER JUNCTION DEVICES VS-VSKH320- SINUSOIDAL CONDUCTION AT TJ MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° 0.009 0.010 0.014 0.020 0.032 0.007 0.011 0.015 0.020 0.033 UNITS K/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 15-Jun-16 Document Number: 94667 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKH320-16PbF Series www.vishay.com Vishay Semiconductors Maximum Allowable Case Temperature (°C) RthJC(DC) = 0.125 K/W 120 110 Ø Conduction angle 100 90 30° 80 60° 90° 120° 70 180° Maximum Average On-State Power Loss (W) 130 60 0 50 100 150 200 250 300 350 RMS limit Ø Conduction angle Per Junction TJ = 130 °C 0 100 200 300 400 500 Average On-State Current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - On-State Power Loss Characteristics 8000 RthJC(DC) = 0.125 K/W 110 100 Ø Conduction angle 90 80 30° 60° 70 90° 60 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 130 °C 7500 120 Peak Half Sine Wave On-State Current (A) Maximum Allowable Case Temperature (°C) DC 180° 120° 90° 60° 30° Average On-State Current (A) 130 DC 120° 7000 60 Hz 0.0083 s 50 Hz 0.0100 s 6500 6000 5500 5000 4500 4000 180° Per junction 3500 50 0 100 200 300 400 1 500 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Average On-State Current (A) Fig. 2 - Current Ratings Characteristics 9000 500 180° 120° 90° 60° 30° 450 400 350 300 RMS limit 250 200 150 Ø Conduction angle Per Junction TJ = 130 °C 100 50 100 200 300 7000 No voltage reapplied Rated VRRM reapplied 6000 5000 4000 Per junction 0 0 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 130 °C 8000 Peak Half Sine Wave On-State Current (A) Maximum Average On-State Power Loss (W) 650 600 550 500 450 400 350 300 250 200 150 100 50 0 400 3000 0.01 0.1 1 Average On-State Current (A) Pulse Train Duration (s) Fig. 3 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 15-Jun-16 Document Number: 94667 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKH320-16PbF Series Instantaneous On-State Current (A) www.vishay.com Vishay Semiconductors 10 000 TJ = 130 °C 1000 TJ = 25 °C Per junction 100 0.5 1.5 2.5 3.5 4.5 Instantaneous On-State Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics ZthJC - Transient Thermal Impedance (°C/W) 1 Steady state value RthJC = 0.125 K/W (DC operation) 0.1 0.01 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS-VS KH 1 2 320 - 3 16 PbF 4 5 1 - Vishay Semiconductors product 2 - Circuit configuration (see end of datasheet) 3 - Current rating 4 - Voltage code x 100 = VRRM (see Voltage Ratings table) 5 - None = Standard production PbF = Lead (Pb)-free Note • To order the optional hardware go to www.vishay.com/doc?95172 Revision: 15-Jun-16 Document Number: 94667 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKH320-16PbF Series www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION SCR/diode doubler circuit, positive control CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING KH ~ ~ + + VSKH... - K1G1 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95086 Application Note www.vishay.com/doc?95557 Revision: 15-Jun-16 Document Number: 94667 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors MAGN-A-PAK DIMENSIONS in millimeters (inches) Ø 5.5 35 (1.38) 20 (0.79) 80 (3.15) 50 (1.97) 38 (1.5) 6 (0.24) 3 screws M8 x 1.25 28 (1.12) 6 (0.24) 9 (0.35) 10 (0.39) HEX 13 52 (2.04) 51 (2.01) 32 (1.26) 115 (4.53) 92 (3.62) Notes • Dimensions are nominal • Full engineering drawings are available on request • UL identification number for gate and cathode wire: UL 1385 • UL identification number for package: UL 94 V-0 Document Number: 95086 Revision: 03-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000