VS-VSKT570-16PbF www.vishay.com Vishay Semiconductors Thyristor/Thyristor (SUPER MAGN-A-PAK Power Modules), 570 A FEATURES • High current capability • High surge capability • Industrial standard package • 3000 VRMS isolating voltage with non-toxic substrate • Designed and qualified for industrial level • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS SUPER MAGN-A-PAK • Motor starters • DC motor controls - AC motor controls PRODUCT SUMMARY • Uninterruptible power supplies IT(AV) 570 A Type Modules - Thyristor, Standard Package SMAP Circuit Two SCRs Doubler Circuit MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES IT(AV) TC = 85 °C 570 IT(RMS) TC = 85 °C 894 ITSM I2t 50 Hz 18 000 60 Hz 18 800 50 Hz 1620 60 Hz 1473 I2√t VDRM/VRRM UNITS A kA2s 16 200 kA2√s 1600 V TStg Range -40 to +125 TJ Range -40 to +135 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM/IDRM MAXIMUM AT TJ = TJ MAXIMUM mA VS-VSKT570-16PbF 16 1600 1700 110 Revision: 29-Apr-15 Document Number: 94683 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKT570-16PbF www.vishay.com Vishay Semiconductors ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current at case temperature Maximum RMS on-state current Maximum peak, one-cycle, non-repetitive on-state surge current IT(AV) IT(RMS) ITSM, IFSM TEST CONDITIONS A 85 °C 180° conduction, half sine wave at TC = 85 °C 894 A t = 10 ms No voltage reapplied 18.0 100 % VRRM reapplied 15.1 t = 8.3 ms t = 10 ms t = 10 ms I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing I2√t No voltage reapplied 18.8 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied t = 0.1 ms to 10 ms, no voltage reapplied 1620 1473 1146 16 200 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.59 High level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 0.63 Low level value on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.41 High level value on-state slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 0.38 Ipk = 1500 A, TJ = 25 °C, tp = 10 ms sine pulse 1.36 VTM IH Maximum latching current IL TJ = 25 °C, anode supply 12 V resistive load kA2s 1042 VT(TO)1 Maximum holding current kA 15.8 Low level value or threshold voltage Maximum on-state voltage drop UNITS 570 180° conduction, half sine wave t = 8.3 ms Maximum I2t for fusing VALUES 500 1000 kA2√s V mΩ V mA SWITCHING PARAMETER Maximum rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS TJ = TJ maximum, ITM = 400 A, VDRM applied Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C Typical turn-off time tq ITM = 750 A; TJ = TJ maximum, dI/dt = - 60 A/μs, VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 Ω VALUES UNITS 1000 A/μs 2.0 μs 65 to 240 BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage SYMBOL dV/dt TEST CONDITIONS VALUES UNITS TJ = TJ maximum, linear to VD = 80 % VDRM 1000 V/μs RMS insulation voltage VINS t=1s 3000 V Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 110 mA Revision: 29-Apr-15 Document Number: 94683 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKT570-16PbF www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum peak average gate power PG(AV) Maximum peak positive gate current +IGM Maximum peak positive gate voltage +VGM Maximum peak negative gate voltage -VGM Maximum DC gate current required to trigger IGT DC gate voltage required to trigger VGT DC gate current not to trigger IGD DC gate voltage not to trigger VGD TEST CONDITIONS VALUES TJ = TJ maximum, tp ≤ 5 ms 10 TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 UNITS W 3.0 TJ = TJ maximum, tp ≤ 5 ms A 20 V 5.0 200 TJ = 25 °C, Vak 12 V mA 3.0 V 10 mA 0.25 V VALUES UNITS TJ = TJ maximum THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range TEST CONDITIONS TJ -40 to +135 Maximum storage temperature range TStg -40 to +125 Maximum thermal resistance, junction to case per junction RthJC Maximum thermal resistance, case to heatsink per module RthC-hs DC operation 0.06 Mounting surface smooth, flat and greased 0.02 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. 6-8 °C K/W SMAP to heatsink Mounting torque ± 10 % busbar to SMAP Nm 12-15 Approximate weight 1500 Case style See dimensions (link at the end of datasheet) g SUPER MAGN-A-PAK ΔRthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.009 0.006 120° 0.011 0.011 90° 0.014 0.015 60° 0.021 0.022 30° 0.037 0.038 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 29-Apr-15 Document Number: 94683 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKT570-16PbF Vishay Semiconductors VSKT570-16PbF RthJC (DC) = 0.06 K/W 130 120 Ø 110 Conduction angle 100 90 60° 80 30° 180° 90° 120° 70 60 0 50 100 150 200 250 300 350 400 450 500 550 600 Average On-State Current (A) Maximum Average On-StatePower Loss (W) Maximum Allowable Case Temperature (°C) www.vishay.com 1300 1200 1100 1000 900 800 700 600 500 40 400 300 200 100 0 Ø Conduction Period 100 90 80 60° 70 DC 180° 30° 60 120° 90° 50 0 100 200 300 400 500 600 700 800 900 Average On-state Current (A) Peak Half Sine Wave On-State Current (A) Maximum Allowable Case Temperature (°C) 110 600 RMS limit 400 Ø Conduction angle VSKT570-16PbF Per junction TJ = 130 °C 200 0 0 100 200 300 400 500 600 700 Average On-State Current (A) Fig. 3 - On-State Power Loss Characteristics Peak Half Sine Wave On-State Current (A) Maximum Average On-StatePower Loss (W) 180° 120° 90° 60° 30° 800 Ø Conduction period VSKT570-16PbF Per junction Average On-State Current (A) 16 500 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 135 °C at 50 Hz 0.0100 s at 60 Hz 0.0083 s 15 500 14 500 13 500 12 500 11 500 10 500 9500 VSKT570-16PbF Per junction 8500 7500 1 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 2 - Current Ratings Characteristics 1000 RMS limit Fig. 4 - On-State Power Loss Characteristics VSKT570-16PbF RthJC (DC) = 0.06 K/W 120 DC 0 100 200 300 400 500 600 700 800 900 1000 1100 Fig. 1 - Current Ratings Characteristics 130 180° 120° 90° 60° 30° 17 000 15 000 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 135 °C Rated VRRM reapplied No voltage reapplied 13 000 11 000 9000 7000 0.01 VSKT570-16PbF Per junction 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 29-Apr-15 Document Number: 94683 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKT570-16PbF Vishay Semiconductors Ø 800 Ø Conduction angle 600 400 200 VSKT570-16PbF 0 0 200 400 600 800 1000 1200 Total RMS Output Current (A) 900 800 = 0.09 - Delta R Rths_a 700 0.1 500 2K /W 6K /W 0.2 K/W 0. 1 500 400 1000 180° 120° 90° 60° 30° 0.3 K /W 0.4 K /W 0.6 K/W 300 200 1200 Maximum Total On-StatePower Loss (W) Maximum Total On-State Power Loss (W) www.vishay.com 100 0 0 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C) ZthJC - Transient Thermal Impedance (K/W) Instantaneous On-State Current (A) Fig. 7 - On-State Power Loss Characteristics 10 000 1000 135 °C 25 °C 100 10 VSKT570-16PbF Per junction 1 0 0.5 1 1.5 2 Maximum Instantaneous On-State Voltage (V) Fig. 8 - On-State Voltage Drop Characteristics 0.1 VSKT570-16PbF Per junction 0.01 Steady state value R = 0.06 K/W (DC operation) 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 9 - Thermal Impedance ZthJC Characteristics 10 Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs b) Recommended load line for ≤ 30 % rated dI/dt: 10 V, 10 Ω tr ≤ 1 µs (1) PGM = 10 W, (2) PGM = 20 W, (3) PGM = 40 W, (4) PGM = 60 W, (a) IGD 0.1 0.001 0.01 TJ = 40 °C VGD TJ = 25 °C 1 tp = 4 ms tp = 2 ms tp = 1 ms tp = 0.66 ms (b) TJ = 130 °C Instantaneous Gate Voltage (V) 100 (1) VSK.570... Series 0.1 1 (2) (3) (4) Frequency limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 10 - Gate Characteristics Revision: 29-Apr-15 Document Number: 94683 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKT570-16PbF www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- VSK 1 2 T 570 3 4 - 16 PbF 5 6 1 - Vishay Semiconductors product 2 - Module type 3 - Circuit configuration (see below) 4 - Current rating 5 - Voltage code x 100 = VRRM 6 - Lead (Pb)-free CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING VSKT 1 ~ + Two SCRs doubler circuit T 2 3 - 4 (K1) 7 (K2) 5 (G1) 6 (G2) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95283 Revision: 29-Apr-15 Document Number: 94683 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors Super MAGN-A-PAK Thyristor/Diode DIMENSIONS in millimeters (inches) 52 (2.05) 16 (0.63) 9.9 ± 0.5 (0.39 ± 0.02) Ø 6.5 mm ± 0.3 mm x 4 Holes (Typ.) 31.0 (1.22) 44.0 (1.73) 50.0 (1.97) Fast-on tabs 2.8 x 0.8 (0.11 x 0.03) 3 2 26.0 (0.98) 26.0 (0.98) 4 6 7 20.1 (0.78) 1 5 28.0 (1.10) 48.0 (1.89) 60.0 (2.36) M10 36.4 (1.14) 4.5 (0.20) 112.0 (4.41) 124.0 (4.88) 5, 6 = Gate 4, 7 = Cathode 1.0 (0.039) 149.0 (5.67) Revision: 09-Mar-15 Document Number: 95283 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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