SQ1470AEH www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET 30 RDS(on) () at VGS = 4.5 V 0.065 RDS(on) () at VGS = 2.5 V 0.095 ID (A) • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1.7 Configuration Single SOT-363 SC-70 Single (6 leads) D 6 D 5 D S 4 G 1 D Top View 2 D 3 G S N-Channel MOSFET Marking Code: 9O ORDERING INFORMATION Package SC-70 Lead (Pb)-free and Halogen-free SQ1470AEH-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 12 Continuous Drain Current a TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID 1.7 IS 1.7 6.7 IAS 10 PD V 1.7 IDM EAS UNIT 5 3.3 1.1 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 125 RthJF 45 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) PCB Mount c °C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). S15-1473-Rev. A, 17-Jun-15 Document Number: 67108 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1470AEH www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = 250 μA 30 - - VGS(th) VDS = VGS, ID = 250 μA 0.6 1 1.6 VDS = 0 V, VGS = ± 12 V UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 30 V - - 1 VGS = 0 V VDS = 30 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 30 V, TJ = 175 °C - - 150 VGS = 4.5 V VDS 5 V 5 - - VGS = 4.5 V ID = 4.2 A - 0.045 0.065 VGS = 4.5 V ID = 3.8 A, TJ = 125 °C - - 0.097 VGS = 4.5 V ID = 3.8 A, TJ = 175 °C - - 0.115 VGS = 2.5 V ID = 4.2 A - 0.060 0.095 - 14 - - 350 450 VDS = 15 V, ID = 1.7 A V nA μA A S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge Qgs Gate-Drain Charge c Qgd Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Fall Time c VGS = 4.5 V VDS = 15 V, f = 1 MHz VDS = 15 V, ID = 4.2 A f = 1 MHz Rg td(on) tr Time c VGS = 0 V td(off) VDD = 15 V, RL = 3.9 ID 4.2 A, VGEN = 4.5 V, Rg = 1 tf Source-Drain Diode Ratings and Characteristics - 65 80 - 30 40 pF - 4.2 5.2 - 1.1 - - 0.7 - 1.9 3.8 5.7 - 10 - - 13 - - 14 - - 8 - - - 11 A - 0.7 1.1 V nC ns b Pulsed Current a ISM Forward Voltage VSD IF = 1.7 A, VGS = 0 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1473-Rev. A, 17-Jun-15 Document Number: 67108 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1470AEH www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 15 VGS = 10 V thru 3 V 16 ID - Drain Current (A) ID - Drain Current (A) 12 VGS = 2 V 9 6 12 8 TC = 25 °C 4 3 TC = 125 °C 0 0 1 2 3 4 TC = -55 °C 0 5 VDS - Drain-to-Source Voltage (V) 0.0 0.5 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.5 5 30 4 24 TC = 25 °C ID - Drain Current (A) gfs - Transconductance (S) TC = -55 °C 18 TC = 125 °C 12 6 3 2 TC = 25 °C 1 TC = 125 °C TC = -55 °C 0 0 0 1 2 3 ID - Drain Current (A) 4 5 0.0 0.5 Transconductance 1.5 2.0 2.5 Transfer Characteristics 0.15 500 0.12 400 Ciss RDS(on) - Resistance (Ω) C - Capacitance (pF) 1.0 VGS - Gate-to-Source Voltage (V) 300 200 Coss 0.09 0.06 VGS = 2.5 V VGS = 4.5 V 0.03 100 Crss 0.00 0 0 10 20 VDS - Drain-to-Source Voltage (V) Capacitance S15-1473-Rev. A, 17-Jun-15 30 0 3 6 9 12 15 ID - Drain Current (A) On-Resistance vs. Drain Current Document Number: 67108 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1470AEH www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 42 5 ID = 1 mA VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) ID = 4.2 A VDS = 15 V 4 3 2 1 38 36 34 32 30 0 0 1 2 3 Qg - Total Gate Charge (nC) 4 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Gate Charge Drain Source Breakdown vs. Junction Temperature 0.4 100 0.2 10 IS - Source Current (A) VGS(th) - Variance (V) 40 0.0 ID = 5 mA - 0.2 ID = 250 μA - 0.4 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 - 0.6 -50 0.001 -25 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 TJ - Temperature (°C) VSD - Source-to-Drain Voltage (V) Threshold Voltage Source Drain Diode Forward Voltage 0.25 1.2 2.0 RDS(on) - Resistance (Normalized) ID = 4.2 A RDS(on) - Resistance (Ω) 0.20 0.15 0.10 TJ = 150 °C 0.05 1.7 VGS = 10 V 1.4 VGS = 4.5 V VGS = 2.5 V 1.1 0.8 TJ = 25°C 0.00 0 1 2 3 4 VDS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage S15-1473-Rev. A, 17-Jun-15 5 0.5 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 67108 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1470AEH www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 100 IDM Limited ID - Drain Current (A) 10 Limited by RDS(on)* 1 ms 1 ID Limited 0.1 TC = 25 °C Single Pulse 0.01 0.01 10 ms 100ms, 1s, 10s, DC BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 125 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 4. Surface Mounted 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient S15-1473-Rev. A, 17-Jun-15 Document Number: 67108 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1470AEH www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67108. S15-1473-Rev. A, 17-Jun-15 Document Number: 67108 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ordering Information www.vishay.com Vishay Siliconix SC-70 Ordering codes for the SQ rugged series power MOSFETs in the SC-70 package: OLD ORDERING CODE a NEW ORDERING CODE SQ1421EDH - SQ1421EDH-T1_GE3 SQ1431EH SQ1431EH-T1-GE3 SQ1431EH-T1_GE3 SQ1440EH - SQ1440EH-T1_GE3 SQ1470AEH - SQ1470AEH-T1_GE3 SQ1539EH - SQ1539EH-T1_GE3 SQ1563AEH - SQ1563AEH-T1_GE3 DATASHEET PART NUMBER SQ1902AEL - SQ1902AEL-T1_GE3 SQ1912AEEH - SQ1912AEEH-T1_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 11-Nov-15 Document Number: 65839 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SCĆ70: 6ĆLEADS MILLIMETERS 6 5 Dim A A1 A2 b c D E E1 e e1 L 4 E1 E 1 2 3 -B- e b e1 D -Ac A2 A L A1 Document Number: 71154 06-Jul-01 INCHES Min Nom Max Min Nom Max 0.90 – 1.10 0.035 – 0.043 – – 0.10 – – 0.004 0.80 – 1.00 0.031 – 0.039 0.15 – 0.30 0.006 – 0.012 0.10 – 0.25 0.004 – 0.010 1.80 2.00 2.20 0.071 0.079 0.087 1.80 2.10 2.40 0.071 0.083 0.094 1.15 1.25 1.35 0.045 0.049 0.053 0.65BSC 0.026BSC 1.20 1.30 1.40 0.047 0.051 0.055 0.10 0.20 0.30 0.004 0.008 0.012 7_Nom 7_Nom ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5550 www.vishay.com 1 AN815 Vishay Siliconix Single-Channel LITTLE FOOTR SC-70 6-Pin MOSFET Copper Leadframe Version Recommended Pad Pattern and Thermal Performance INTRODUCTION EVALUATION BOARDS SINGLE SC70-6 The new single 6-pin SC-70 package with a copper leadframe enables improved on-resistance values and enhanced thermal performance as compared to the existing 3-pin and 6-pin packages with Alloy 42 leadframes. These devices are intended for small to medium load applications where a miniaturized package is required. Devices in this package come in a range of on-resistance values, in n-channel and p-channel versions. This technical note discusses pin-outs, package outlines, pad patterns, evaluation board layout, and thermal performance for the single-channel version. The evaluation board (EVB) measures 0.6 inches by 0.5 inches. The copper pad traces are the same as in Figure 2. The board allows examination from the outer pins to 6-pin DIP connections, permitting test sockets to be used in evaluation testing. See Figure 3. 52 (mil) BASIC PAD PATTERNS See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/doc?72286) for the basic pad layout and dimensions. These pad patterns are sufficient for the low to medium power applications for which this package is intended. Increasing the drain pad pattern yields a reduction in thermal resistance and is a preferred footprint. The availability of four drain leads rather than the traditional single drain lead allows a better thermal path from the package to the PCB and external environment. 96 (mil) 6 5 4 1 2 3 71 (mil) 26 (mil) 13 (mil) 0, 0 (mil) 18 (mil) 26 (mil) PIN-OUT 16 (mil) Figure 1 shows the pin-out description and Pin 1 identification.The pin-out of this device allows the use of four pins as drain leads, which helps to reduce on-resistance and junction-to-ambient thermal resistance. SOT-363 SC-70 (6-LEADS) D 1 6 D D 2 5 D G 3 4 S FIGURE 2. SC-70 (6 leads) Single The thermal performance of the single 6-pin SC-70 has been measured on the EVB, comparing both the copper and Alloy 42 leadframes. This test was first conducted on the traditional Alloy 42 leadframe and was then repeated using the 1-inch2 PCB with dual-side copper coating. Top View FIGURE 1. For package dimensions see outline drawing SC-70 (6-Leads) (http://www.vishay.com/doc?71154) Document Number: 71334 12-Dec-03 www.vishay.com 1 AN815 Vishay Siliconix Front of Board SC70-6 Back of Board SC70-6 vishay.com FIGURE 3. THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (Package Performance) COOPER LEADFRAME Room Ambient 25 _C The junction to foot thermal resistance is a useful method of comparing different packages thermal performance. A helpful way of presenting the thermal performance of the 6-Pin SC-70 copper leadframe device is to compare it to the traditional Alloy 42 version. Thermal performance for the 6-pin SC-70 measured as junction-to-foot thermal resistance, where the “foot” is the drain lead of the device at the bottom where it meets the PCB. The junction-to-foot thermal resistance is typically 40_C/W in the copper leadframe and 163_C/W in the Alloy 42 leadframe — a four-fold improvement. This improved performance is obtained by the enhanced thermal conductivity of copper over Alloy 42. The typical RqJA for the single 6-pin SC-70 with copper leadframe is 103_C/W steady-state, compared with 212_C/W for the Alloy 42 version. The figures are based on the 1-inch2 FR4 test board. The following example shows how the thermal resistance impacts power dissipation for the two different leadframes at varying ambient temperatures. ALLOY 42 LEADFRAME PD + Rq JA Elevated Ambient 60 _C PD + T J(max) * T A Rq JA o o P D + 150 Co* 25 C 212 CńW o o P D + 150 Co* 25 C 212 CńW P D + 590 mW P D + 425 mW www.vishay.com 2 T J(max) * T A T J(max) * T A Rq JA PD + T J(max) * T A Rq JA o o P D + 150 Co* 25 C 124 CńW o o P D + 150 Co* 60 C 124 CńW P D + 1.01 W P D + 726 mW As can be seen from the calculations above, the compact 6-pin SC-70 copper leadframe LITTLE FOOT power MOSFET can handle up to 1 W under the stated conditions. Testing To further aid comparison of copper and Alloy 42 leadframes, Figure 5 illustrates single-channel 6-pin SC-70 thermal performance on two different board sizes and two different pad patterns. The measured steady-state values of RqJA for the two leadframes are as follows: LITTLE FOOT 6-PIN SC-70 Power Dissipation Room Ambient 25 _C PD + Elevated Ambient 60 _C 1) Minimum recommended pad pattern on the EVB board V (see Figure 3. 1-inch2 2) Industry standard PCB with maximum copper both sides. Alloy 42 Copper 329.7_C/W 208.5_C/W 211.8_C/W 103.5_C/W The results indicate that designers can reduce thermal resistance (RqJA) by 36% simply by using the copper leadframe device rather than the Alloy 42 version. In this example, a 121_C/W reduction was achieved without an increase in board area. If increasing in board size is feasible, a further 105_C/W reduction could be obtained by utilizing a 1-inch2 square PCB area. The copper leadframe versions have the following suffix: Single: Si14xxEDH Dual: Si19xxEDH Complementary: Si15xxEDH Document Number: 71334 12-Dec-03 AN815 400 250 320 200 240 Thermal Resistance (C/W) Thermal Resistance (C/W) Vishay Siliconix Alloy 42 160 Copper 80 150 Alloy 42 100 50 Copper 0 0 10-5 10-4 10-3 10-2 10-1 1 10 100 1000 10-5 Leadframe Comparison on EVB Document Number: 71334 12-Dec-03 10-3 10-2 10-1 1 10 100 1000 Time (Secs) Time (Secs) FIGURE 4. 10-4 FIGURE 5. Leadframe Comparison on Alloy 42 1-inch2 PCB www.vishay.com 3 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead 0.067 0.026 (0.648) 0.045 (1.143) 0.096 (2.438) (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 18 Document Number: 72602 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000