SQ1902AEL Datasheet

SQ1902AEL
www.vishay.com
Vishay Siliconix
Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® power MOSFET
20
RDS(on) (Ω) at VGS = 4.5 V
0.415
• 100 % Rg and UIS tested
RDS(on) (Ω) at VGS = 2.5 V
0.600
• AEC-Q101 qualified c
ID (A)
0.78
Configuration
Dual
Package
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
SC-70
SOT-363
SC-70 Dual (6 leads)
D1
6
G2
5
D2
D1
S2
4
G2
G1
1
S1
Top View
2
G1
3
D2
S2
S1
N-Channel MOSFET
N-Channel MOSFET
Marking Code: 9P
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
± 12
Continuous Drain Current
TC = 25 °C
TC = 125 °C
Continuous Source Current (Diode Conduction)
Pulsed Drain Current a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation a
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
0.78
IS
0.54
3
IAS
3.5
PD
V
0.45
IDM
EAS
UNIT
0.6
0.43
0.14
A
mJ
W
TJ, Tstg
-55 to +175
°C
SYMBOL
LIMIT
UNIT
RthJA
460
RthJF
350
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
PCB Mount b
°C/W
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. When mounted on 1" square PCB (FR4 material).
c. Parametric verification ongoing.
S15-1917-Rev. A, 17-Aug-15
Document Number: 62977
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1902AEL
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b
VDS
VGS = 0, ID = 250 μA
20
-
-
VGS(th)
VDS = VGS, ID = 250 μA
0.6
1.0
1.5
VDS = 0 V, VGS = ± 12 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 20 V
-
-
1
VGS = 0 V
VDS = 20 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 20 V, TJ = 175 °C
-
-
150
VGS = 4.5 V
VDS ≥ 5 V
0.8
-
-
VGS = 4.5 V
ID = 0.66 A
-
0.200
0.415
VGS = 4.5 V
ID = 0.66 A, TJ = 125 °C
-
-
0.594
VGS = 4.5 V
ID = 0.66 A, TJ = 175 °C
-
-
0.698
VGS = 2.5 V
ID = 0.4 A
-
0.250
0.600
-
1.1
-
-
50
75
-
21
28
-
9
15
VDS = 10 V, ID = 1 A
V
nA
μA
A
Ω
S
Dynamic b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge c
Qgs
Gate-Drain Charge c
Qgd
Gate Resistance
Turn-On Delay Time c
Rise Time c
Turn-Off Delay Time c
Fall Time c
Rg
VGS = 0 V
VDS = 10 V, f = 1 MHz
VGS = 4.5 V
VDS = 10 V, ID = 1.2 A
f = 1 MHz
td(on)
tr
td(off)
VDD = 10 V, RL = 20 Ω
ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 1 Ω
tf
Source-Drain Diode Ratings and Characteristics
-
0.7
1.2
-
0.1
-
-
0.1
-
4.5
9.1
13.7
-
10
15
-
22
30
-
20
28
-
18
25
pF
nC
Ω
ns
b
Pulsed Current a
ISM
Forward Voltage
VSD
IF = 0.5 A, VGS = 0
-
-
3
A
-
0.85
1.2
V
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1917-Rev. A, 17-Aug-15
Document Number: 62977
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1902AEL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1.0
1.0
VGS = 5 V thru 2 V
0.8
ID - Drain Current (A)
ID - Drain Current (A)
0.8
0.6
0.4
VGS = 1.5 V
0.6
0.4
TC = 25 °C
0.2
0.2
TC = 125 °C
TC = - 55 °C
VGS = 1 V
0.0
0.0
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
0.0
0.5
1.0
1.5
2.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.50
100
0.40
80
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0
0.30
VGS = 2.5 V
0.20
VGS = 4.5 V
60
Ciss
40
Coss
20
0.10
Crss
0
0.00
0.0
0.2
0.4
0.6
ID - Drain Current (A)
0.8
0
1.0
5
10
15
20
VDS - Drain-to-Source Voltage (V)
Capacitance
On-Resistance vs. Drain Current
5
2.0
ID = 0.66 A
RDS(on) - On-Resistance (Normalized)
ID = 1.2 A
VGS - Gate-to-Source Voltage (V)
2.5
4
3
2
1
0
0.0
0.2
0.4
0.6
0.8
1.0
1.7
VGS = 4.5 V
1.4
VGS = 2.5 V
1.1
0.8
0.5
- 50
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S15-1917-Rev. A, 17-Aug-15
175
Document Number: 62977
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1902AEL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1.0
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
1
TJ = 150 °C
0.1
TJ = 25 °C
0.01
0.8
0.6
0.4
TJ = 150 °C
0.2
TJ = 25 °C
0.001
0.0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
28
VDS - Drain-to-Source Voltage (V)
ID = 1 mA
VGS(th) Variance (V)
0.2
ID = 5 mA
- 0.1
ID = 250 μA
- 0.4
- 0.7
- 1.0
- 50
- 25
0
25
50
75
100
125
150
27
26
25
24
23
- 50
175
- 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
TJ - Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
10
IDM Limited
ID - Drain Current (A)
100 μs
1
Limited by RDS(on)*
1 ms
10 ms
0.1
100 ms
BVDSS Limited
TC = 25 °C
Single Pulse
0.01
0.01
1s
10 s, DC
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
S15-1917-Rev. A, 17-Aug-15
Document Number: 62977
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1902AEL
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 460 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
4. Surface Mounted
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62977.
S15-1917-Rev. A, 17-Aug-15
Document Number: 62977
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ordering Information
www.vishay.com
Vishay Siliconix
SC-70
Ordering codes for the SQ rugged series power MOSFETs in the SC-70 package:
OLD ORDERING CODE a
NEW ORDERING CODE
SQ1421EDH
-
SQ1421EDH-T1_GE3
SQ1431EH
SQ1431EH-T1-GE3
SQ1431EH-T1_GE3
SQ1440EH
-
SQ1440EH-T1_GE3
SQ1470AEH
-
SQ1470AEH-T1_GE3
SQ1539EH
-
SQ1539EH-T1_GE3
SQ1563AEH
-
SQ1563AEH-T1_GE3
DATASHEET PART NUMBER
SQ1902AEL
-
SQ1902AEL-T1_GE3
SQ1912AEEH
-
SQ1912AEEH-T1_GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
Revision: 11-Nov-15
Document Number: 65839
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SCĆ70:
6ĆLEADS
MILLIMETERS
6
5
Dim
A
A1
A2
b
c
D
E
E1
e
e1
L
4
E1 E
1
2
3
-B-
e
b
e1
D
-Ac
A2 A
L
A1
Document Number: 71154
06-Jul-01
INCHES
Min
Nom
Max
Min
Nom
Max
0.90
–
1.10
0.035
–
0.043
–
–
0.10
–
–
0.004
0.80
–
1.00
0.031
–
0.039
0.15
–
0.30
0.006
–
0.012
0.10
–
0.25
0.004
–
0.010
1.80
2.00
2.20
0.071
0.079
0.087
1.80
2.10
2.40
0.071
0.083
0.094
1.15
1.25
1.35
0.045
0.049
0.053
0.65BSC
0.026BSC
1.20
1.30
1.40
0.047
0.051
0.055
0.10
0.20
0.30
0.004
0.008
0.012
7_Nom
7_Nom
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5550
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1
AN814
Vishay Siliconix
Dual-Channel LITTLE FOOTR SC-70 6-Pin MOSFET
Recommended Pad Pattern and Thermal Performance
INTRODUCTION
This technical note discusses the pin-outs, package outlines,
pad patterns, evaluation board layout, and thermal
performance for dual-channel LITTLE FOOT power
MOSFETs in the SC-70 package. These new Vishay Siliconix
devices are intended for small-signal applications where a
miniaturized package is needed and low levels of current
(around 250 mA) need to be switched, either directly or by
using a level shift configuration. Vishay provides these devices
with a range of on-resistance specifications in 6-pin versions.
The new 6-pin SC-70 package enables improved
on-resistance values and enhanced thermal performance.
PIN-OUT
Figure 1 shows the pin-out description and Pin 1 identification
for the dual-channel SC-70 device in the 6-pin configuration.
SOT-363
SC-70 (6-LEADS)
S1
1
6
D1
G1
2
5
G2
D2
3
4
S2
applications for which this package is intended. For the 6-pin
device, increasing the pad patterns yields a reduction in
thermal resistance on the order of 20% when using a 1-inch
square with full copper on both sides of the printed circuit board
(PCB).
EVALUATION BOARDS FOR THE DUAL
SC70-6
The 6-pin SC-70 evaluation board (EVB) measures 0.6 inches
by 0.5 inches. The copper pad traces are the same as
described in the previous section, Basic Pad Patterns. The
board allows interrogation from the outer pins to 6-pin DIP
connections permitting test sockets to be used in evaluation
testing.
The thermal performance of the dual SC-70 has been
measured on the EVB with the results shown below. The
minimum recommended footprint on the evaluation board was
compared with the industry standard 1-inch square FR4 PCB
with copper on both sides of the board.
THERMAL PERFORMANCE
Top View
FIGURE 1.
For package dimensions see outline drawing SC-70 (6-Leads)
(http://www.vishay.com/doc?71154)
Junction-to-Foot Thermal Resistance
(the Package Performance)
Thermal performance for the dual SC-70 6-pin package
measured as junction-to-foot thermal resistance is 300_C/W
typical, 350_C/W maximum. The “foot” is the drain lead of the
device as it connects with the body. Note that these numbers
are somewhat higher than other LITTLE FOOT devices due to
the limited thermal performance of the Alloy 42 lead-frame
compared with a standard copper lead-frame.
Junction-to-Ambient Thermal Resistance
(dependent on PCB size)
BASIC PAD PATTERNS
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/doc?72286) for the 6-pin
SC-70. This basic pad pattern is sufficient for the low-power
Document Number: 71237
12-Dec-03
The typical RθJA for the dual 6-pin SC-70 is 400_C/W steady
state. Maximum ratings are 460_C/W for the dual. All figures
based on the 1-inch square FR4 test board. The following
example shows how the thermal resistance impacts power
dissipation for the dual 6-pin SC-70 package at two different
ambient temperatures.
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1
AN814
Vishay Siliconix
SC-70 (6-PIN)
PD +
Dual EVB
Elevated Ambient 60 _C
TJ(max) * TA
Rq JA
o
o
PD + 150 Co* 25 C
400 CńW
PD + 312 mW
PD +
TJ(max) * TA
Rq JA
o
o
PD + 150 Co* 60 C
400 CńW
PD + 225 mW
NOTE: Although they are intended for low-power applications,
devices in the 6-pin SC-70 will handle power dissipation in
excess of 0.2 W.
400
Thermal Resistance (C/W)
Room Ambient 25 _C
500
300
200
100
1” Square FR4 PCB
0
10-5 10-4
Testing
LITTLE FOOT SC-70 (6-PIN)
1) Minimum recommended pad pattern (see
Figure 2) on the EVB of 0.5 inches x
0.6 inches.
518_C/W
2) Industry standard 1” square PCB with
maximum copper both sides.
413_C/W
2
10-2
10-1
1
10
100
1000
Time (Secs)
To aid comparison further, Figure 2 illustrates the dual-channel
SC-70 thermal performance on two different board sizes and
two different pad patterns. The results display the thermal
performance out to steady state. The measured steady state
values of RθJA for the dual 6-pin SC-70 are as follows:
www.vishay.com
10-3
FIGURE 2.
Comparison of Dual SC70-6 on EVB and 1”
Square FR4 PCB.
The results show that if the board area can be increased and
maximum copper traces are added, the thermal resistance
reduction is limited to 20%. This fact confirms that the power
dissipation is restricted with the package size and the Alloy 42
leadframe.
ASSOCIATED DOCUMENT
Single-Channel LITTLE FOOT SC-70 6-Pin MOSFET Copper
Leadframe Version, REcommended Pad Pattern and Thermal
Performance, AN815, (http://www.vishay.com/doc?71334).
Document Number: 71237
12-Dec-03
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead
0.067
0.026
(0.648)
0.045
(1.143)
0.096
(2.438)
(1.702)
0.016
0.026
0.010
(0.406)
(0.648)
(0.241)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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18
Document Number: 72602
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000