SQ1902AEL www.vishay.com Vishay Siliconix Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET 20 RDS(on) (Ω) at VGS = 4.5 V 0.415 • 100 % Rg and UIS tested RDS(on) (Ω) at VGS = 2.5 V 0.600 • AEC-Q101 qualified c ID (A) 0.78 Configuration Dual Package • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 SC-70 SOT-363 SC-70 Dual (6 leads) D1 6 G2 5 D2 D1 S2 4 G2 G1 1 S1 Top View 2 G1 3 D2 S2 S1 N-Channel MOSFET N-Channel MOSFET Marking Code: 9P ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 Continuous Drain Current TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction) Pulsed Drain Current a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation a L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID 0.78 IS 0.54 3 IAS 3.5 PD V 0.45 IDM EAS UNIT 0.6 0.43 0.14 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 460 RthJF 350 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) PCB Mount b °C/W Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. When mounted on 1" square PCB (FR4 material). c. Parametric verification ongoing. S15-1917-Rev. A, 17-Aug-15 Document Number: 62977 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1902AEL www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b VDS VGS = 0, ID = 250 μA 20 - - VGS(th) VDS = VGS, ID = 250 μA 0.6 1.0 1.5 VDS = 0 V, VGS = ± 12 V IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 20 V - - 1 VGS = 0 V VDS = 20 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 20 V, TJ = 175 °C - - 150 VGS = 4.5 V VDS ≥ 5 V 0.8 - - VGS = 4.5 V ID = 0.66 A - 0.200 0.415 VGS = 4.5 V ID = 0.66 A, TJ = 125 °C - - 0.594 VGS = 4.5 V ID = 0.66 A, TJ = 175 °C - - 0.698 VGS = 2.5 V ID = 0.4 A - 0.250 0.600 - 1.1 - - 50 75 - 21 28 - 9 15 VDS = 10 V, ID = 1 A V nA μA A Ω S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c Rg VGS = 0 V VDS = 10 V, f = 1 MHz VGS = 4.5 V VDS = 10 V, ID = 1.2 A f = 1 MHz td(on) tr td(off) VDD = 10 V, RL = 20 Ω ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 1 Ω tf Source-Drain Diode Ratings and Characteristics - 0.7 1.2 - 0.1 - - 0.1 - 4.5 9.1 13.7 - 10 15 - 22 30 - 20 28 - 18 25 pF nC Ω ns b Pulsed Current a ISM Forward Voltage VSD IF = 0.5 A, VGS = 0 - - 3 A - 0.85 1.2 V Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1917-Rev. A, 17-Aug-15 Document Number: 62977 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1902AEL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1.0 1.0 VGS = 5 V thru 2 V 0.8 ID - Drain Current (A) ID - Drain Current (A) 0.8 0.6 0.4 VGS = 1.5 V 0.6 0.4 TC = 25 °C 0.2 0.2 TC = 125 °C TC = - 55 °C VGS = 1 V 0.0 0.0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 0.0 0.5 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.50 100 0.40 80 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0 0.30 VGS = 2.5 V 0.20 VGS = 4.5 V 60 Ciss 40 Coss 20 0.10 Crss 0 0.00 0.0 0.2 0.4 0.6 ID - Drain Current (A) 0.8 0 1.0 5 10 15 20 VDS - Drain-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current 5 2.0 ID = 0.66 A RDS(on) - On-Resistance (Normalized) ID = 1.2 A VGS - Gate-to-Source Voltage (V) 2.5 4 3 2 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.7 VGS = 4.5 V 1.4 VGS = 2.5 V 1.1 0.8 0.5 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S15-1917-Rev. A, 17-Aug-15 175 Document Number: 62977 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1902AEL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1.0 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 1 TJ = 150 °C 0.1 TJ = 25 °C 0.01 0.8 0.6 0.4 TJ = 150 °C 0.2 TJ = 25 °C 0.001 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 28 VDS - Drain-to-Source Voltage (V) ID = 1 mA VGS(th) Variance (V) 0.2 ID = 5 mA - 0.1 ID = 250 μA - 0.4 - 0.7 - 1.0 - 50 - 25 0 25 50 75 100 125 150 27 26 25 24 23 - 50 175 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) TJ - Temperature (°C) Threshold Voltage Drain Source Breakdown vs. Junction Temperature 10 IDM Limited ID - Drain Current (A) 100 μs 1 Limited by RDS(on)* 1 ms 10 ms 0.1 100 ms BVDSS Limited TC = 25 °C Single Pulse 0.01 0.01 1s 10 s, DC 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area S15-1917-Rev. A, 17-Aug-15 Document Number: 62977 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1902AEL www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 460 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62977. S15-1917-Rev. A, 17-Aug-15 Document Number: 62977 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ordering Information www.vishay.com Vishay Siliconix SC-70 Ordering codes for the SQ rugged series power MOSFETs in the SC-70 package: OLD ORDERING CODE a NEW ORDERING CODE SQ1421EDH - SQ1421EDH-T1_GE3 SQ1431EH SQ1431EH-T1-GE3 SQ1431EH-T1_GE3 SQ1440EH - SQ1440EH-T1_GE3 SQ1470AEH - SQ1470AEH-T1_GE3 SQ1539EH - SQ1539EH-T1_GE3 SQ1563AEH - SQ1563AEH-T1_GE3 DATASHEET PART NUMBER SQ1902AEL - SQ1902AEL-T1_GE3 SQ1912AEEH - SQ1912AEEH-T1_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 11-Nov-15 Document Number: 65839 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SCĆ70: 6ĆLEADS MILLIMETERS 6 5 Dim A A1 A2 b c D E E1 e e1 L 4 E1 E 1 2 3 -B- e b e1 D -Ac A2 A L A1 Document Number: 71154 06-Jul-01 INCHES Min Nom Max Min Nom Max 0.90 – 1.10 0.035 – 0.043 – – 0.10 – – 0.004 0.80 – 1.00 0.031 – 0.039 0.15 – 0.30 0.006 – 0.012 0.10 – 0.25 0.004 – 0.010 1.80 2.00 2.20 0.071 0.079 0.087 1.80 2.10 2.40 0.071 0.083 0.094 1.15 1.25 1.35 0.045 0.049 0.053 0.65BSC 0.026BSC 1.20 1.30 1.40 0.047 0.051 0.055 0.10 0.20 0.30 0.004 0.008 0.012 7_Nom 7_Nom ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5550 www.vishay.com 1 AN814 Vishay Siliconix Dual-Channel LITTLE FOOTR SC-70 6-Pin MOSFET Recommended Pad Pattern and Thermal Performance INTRODUCTION This technical note discusses the pin-outs, package outlines, pad patterns, evaluation board layout, and thermal performance for dual-channel LITTLE FOOT power MOSFETs in the SC-70 package. These new Vishay Siliconix devices are intended for small-signal applications where a miniaturized package is needed and low levels of current (around 250 mA) need to be switched, either directly or by using a level shift configuration. Vishay provides these devices with a range of on-resistance specifications in 6-pin versions. The new 6-pin SC-70 package enables improved on-resistance values and enhanced thermal performance. PIN-OUT Figure 1 shows the pin-out description and Pin 1 identification for the dual-channel SC-70 device in the 6-pin configuration. SOT-363 SC-70 (6-LEADS) S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 applications for which this package is intended. For the 6-pin device, increasing the pad patterns yields a reduction in thermal resistance on the order of 20% when using a 1-inch square with full copper on both sides of the printed circuit board (PCB). EVALUATION BOARDS FOR THE DUAL SC70-6 The 6-pin SC-70 evaluation board (EVB) measures 0.6 inches by 0.5 inches. The copper pad traces are the same as described in the previous section, Basic Pad Patterns. The board allows interrogation from the outer pins to 6-pin DIP connections permitting test sockets to be used in evaluation testing. The thermal performance of the dual SC-70 has been measured on the EVB with the results shown below. The minimum recommended footprint on the evaluation board was compared with the industry standard 1-inch square FR4 PCB with copper on both sides of the board. THERMAL PERFORMANCE Top View FIGURE 1. For package dimensions see outline drawing SC-70 (6-Leads) (http://www.vishay.com/doc?71154) Junction-to-Foot Thermal Resistance (the Package Performance) Thermal performance for the dual SC-70 6-pin package measured as junction-to-foot thermal resistance is 300_C/W typical, 350_C/W maximum. The “foot” is the drain lead of the device as it connects with the body. Note that these numbers are somewhat higher than other LITTLE FOOT devices due to the limited thermal performance of the Alloy 42 lead-frame compared with a standard copper lead-frame. Junction-to-Ambient Thermal Resistance (dependent on PCB size) BASIC PAD PATTERNS See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/doc?72286) for the 6-pin SC-70. This basic pad pattern is sufficient for the low-power Document Number: 71237 12-Dec-03 The typical RθJA for the dual 6-pin SC-70 is 400_C/W steady state. Maximum ratings are 460_C/W for the dual. All figures based on the 1-inch square FR4 test board. The following example shows how the thermal resistance impacts power dissipation for the dual 6-pin SC-70 package at two different ambient temperatures. www.vishay.com 1 AN814 Vishay Siliconix SC-70 (6-PIN) PD + Dual EVB Elevated Ambient 60 _C TJ(max) * TA Rq JA o o PD + 150 Co* 25 C 400 CńW PD + 312 mW PD + TJ(max) * TA Rq JA o o PD + 150 Co* 60 C 400 CńW PD + 225 mW NOTE: Although they are intended for low-power applications, devices in the 6-pin SC-70 will handle power dissipation in excess of 0.2 W. 400 Thermal Resistance (C/W) Room Ambient 25 _C 500 300 200 100 1” Square FR4 PCB 0 10-5 10-4 Testing LITTLE FOOT SC-70 (6-PIN) 1) Minimum recommended pad pattern (see Figure 2) on the EVB of 0.5 inches x 0.6 inches. 518_C/W 2) Industry standard 1” square PCB with maximum copper both sides. 413_C/W 2 10-2 10-1 1 10 100 1000 Time (Secs) To aid comparison further, Figure 2 illustrates the dual-channel SC-70 thermal performance on two different board sizes and two different pad patterns. The results display the thermal performance out to steady state. The measured steady state values of RθJA for the dual 6-pin SC-70 are as follows: www.vishay.com 10-3 FIGURE 2. Comparison of Dual SC70-6 on EVB and 1” Square FR4 PCB. The results show that if the board area can be increased and maximum copper traces are added, the thermal resistance reduction is limited to 20%. This fact confirms that the power dissipation is restricted with the package size and the Alloy 42 leadframe. ASSOCIATED DOCUMENT Single-Channel LITTLE FOOT SC-70 6-Pin MOSFET Copper Leadframe Version, REcommended Pad Pattern and Thermal Performance, AN815, (http://www.vishay.com/doc?71334). Document Number: 71237 12-Dec-03 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead 0.067 0.026 (0.648) 0.045 (1.143) 0.096 (2.438) (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 18 Document Number: 72602 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000