SQ1421EDH www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET -60 RDS(on) () at VGS = -10 V 0.290 RDS(on) () at VGS = -4.5 V 0.395 ID (A) • AEC-Q101 qualified • 100 % Rg and UIS tested • Typical ESD protection: 800 V -1.6 Configuration Single Package SC-70 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 SOT-363 SC-70 Single (6 leads) D 6 D 5 S 4 (1, 2, 5, 6) D (3) G 1 D Top View 2 D 3 G P-Channel MOSFET (4) S Marking Code: 9B ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C a TC = 125 °C Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V -1.6 -1 IS -1.6 IDM -6.7 IAS -8 EAS 3.2 PD UNIT 2.7 0.5 A mJ W TJ, Tstg -55 to +150 °C SYMBOL LIMIT UNIT RthJA 125 RthJF 45 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) PCB Mount c °C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). S15-2690-Rev. A, 16-Nov-15 Document Number: 68494 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1421EDH www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage VDS VGS = 0 V, ID = -250 μA -60 - - VGS(th) VDS = VGS, ID = -250 μA -1.5 -2.0 -2.5 VDS = 0 V, VGS = ± 12 V - - ±5 μA VDS = 0 V, VGS = ± 20 V - - ±5 mA Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b ID(on) RDS(on) gfs VGS = 0 V VDS = -60 V - - -1 VGS = 0 V VDS = -60 V, TJ = 125 °C - - -50 VGS = 0 V VDS = -60 V, TJ = 150 °C - - -150 VGS = -10 V VDS -5 V -5 - - VGS = -10 V ID = -2 A - 0.230 0.290 VGS = -10 V ID = -2 A, TJ = 125 °C - - 0.470 VGS = -10 V ID = -2 A, TJ = 150 °C - - 0.566 VGS = -4.5 V ID = -1 A - 0.305 0.395 - 3 - - 284 355 - 36 45 - 28 35 VDS = -10 V, ID = -1.5 A V μA A S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c Rg VGS = 0 V VGS = -4.5 V VDS = -25 V, f = 1 MHz VDS = -30 V, ID = -1 A f = 1 MHz td(on) tr td(off) VDD = -30 V, RL = 30 ID -1 A, VGEN = -4.5 V, Rg = 1 tf - 3.6 5.4 - 1.2 - - 1.7 - 3.1 6.05 9 - 44 66 - 25 38 - 13 20 - 9 14 pF nC ns Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM Forward Voltage VSD IF = -0.5 A, VGS = 0 V - - -6.7 A - -0.8 -1.2 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-2690-Rev. A, 16-Nov-15 Document Number: 68494 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1421EDH www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 0.005 10-1 10-2 IGSS - Gate Current (A) IGSS - Gate Current (A) 0.004 0.003 T J = 25 °C 0.002 0.001 10-3 10-4 T J = 150 °C 10-5 10-6 T J = 25 °C 10-7 10-8 10-9 0.000 10-10 0 5 10 15 20 0 25 5 10 15 20 VGS - Gate-Source Voltage (V) VGS - Gate-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 10 25 8 VGS = 10 V thru 6 V 6 VGS = 5 V ID - Drain Current (A) ID - Drain Current (A) 8 6 4 VGS = 4 V 4 TC = 25 °C 2 2 TC = 125 °C VGS = 3 V 0 0 2 4 6 8 10 0 4 6 8 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 10 1.0 RDS(on) - On-Resistance (Ω) 0.8 4 gfs - Transconductance (S) 2 VDS - Drain-to-Source Voltage (V) 5 TC = - 55 °C TC = 25 °C 3 TC = 125 °C 2 VGS = 4.5 V 0.6 0.4 VGS = 10 V 0.2 1 0 0.0 TC = - 55 °C 0 0.0 0.4 0.8 1.2 1.6 2.0 0 2 4 6 8 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current S15-2690-Rev. A, 16-Nov-15 10 Document Number: 68494 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1421EDH www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 6 500 VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) 400 Ciss 300 200 100 Coss Crss 0 20 30 40 50 4 3 2 1 0 60 1 2 3 4 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge 1.0 100 0.7 10 ID = 250 µA 0.4 ID = 5 mA 0.1 5 TJ = 150 °C 1 0.1 TJ = 25 °C 0.01 - 0.2 - 0.5 - 50 - 25 0 25 50 75 100 125 150 0.001 0.0 0.2 0.4 0.6 0.8 1.0 TJ - Temperature (°C) VSD - Source-to-Drain Voltage (V) Threshold Voltage Source Drain Diode Forward Voltage 1.0 1.2 RDS(on) - On-Resistance (Normalized) 2.5 0.8 RDS(on) - On-Resistance (Ω) ID = 1 A VDS = 30 V 0 10 IS - Source Current (A) VGS(th) Variance (V) 0 5 0.6 TJ = 150 °C 0.4 TJ = 25 °C 0.2 0.0 0 2 4 6 8 10 ID = 2 A 2.1 1.7 VGS = 10 V 1.3 VGS = 4.5 V 0.9 0.5 - 50 - 25 0 25 50 75 100 125 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature S15-2690-Rev. A, 16-Nov-15 150 Document Number: 68494 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1421EDH www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) VDS - Drain-to-Source Voltage (V) - 60 - 64 ID = 1 mA - 68 - 72 - 76 - 80 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature 100 IDM Limited ID - Drain Current (A) 10 Limited by RDS(on) (1) 100 µs 1 ID Limited 1 ms 10 ms 0.1 TC = 25 °C Single Pulse 0.01 0.01 (1) BVDSS Limited 100 ms 1 s, 10 s, DC 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area S15-2690-Rev. A, 16-Nov-15 Document Number: 68494 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1421EDH www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 125 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 0 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68494. S15-2690-Rev. A, 16-Nov-15 Document Number: 68494 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ordering Information www.vishay.com Vishay Siliconix SC-70 Ordering codes for the SQ rugged series power MOSFETs in the SC-70 package: OLD ORDERING CODE a NEW ORDERING CODE SQ1421EDH - SQ1421EDH-T1_GE3 SQ1431EH SQ1431EH-T1-GE3 SQ1431EH-T1_GE3 SQ1440EH - SQ1440EH-T1_GE3 SQ1470AEH - SQ1470AEH-T1_GE3 SQ1539EH - SQ1539EH-T1_GE3 SQ1563AEH - SQ1563AEH-T1_GE3 DATASHEET PART NUMBER SQ1902AEL - SQ1902AEL-T1_GE3 SQ1912AEEH - SQ1912AEEH-T1_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 11-Nov-15 Document Number: 65839 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SCĆ70: 6ĆLEADS MILLIMETERS 6 5 Dim A A1 A2 b c D E E1 e e1 L 4 E1 E 1 2 3 -B- e b e1 D -Ac A2 A L A1 Document Number: 71154 06-Jul-01 INCHES Min Nom Max Min Nom Max 0.90 – 1.10 0.035 – 0.043 – – 0.10 – – 0.004 0.80 – 1.00 0.031 – 0.039 0.15 – 0.30 0.006 – 0.012 0.10 – 0.25 0.004 – 0.010 1.80 2.00 2.20 0.071 0.079 0.087 1.80 2.10 2.40 0.071 0.083 0.094 1.15 1.25 1.35 0.045 0.049 0.053 0.65BSC 0.026BSC 1.20 1.30 1.40 0.047 0.051 0.055 0.10 0.20 0.30 0.004 0.008 0.012 7_Nom 7_Nom ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5550 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead 0.067 0.026 (0.648) 0.045 (1.143) 0.096 (2.438) (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 18 Document Number: 72602 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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