SQJ500EP www.vishay.com Vishay Siliconix Automotive N- and P-Channel 40 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY N-CHANNEL VDS (V) P-CHANNEL 40 - 40 RDS(on) () at VGS = ± 10 V 0.014 0.028 RDS(on) () at VGS = ± 4.5 V 0.015 0.042 8 -8 ID (A) Configuration N- and P-Pair • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK® SO-8L Dual m 5m 6.1 D1 S2 5.1 3m m G2 D 2 G1 D 1 4 G2 S2 3 2 G1 1 S1 S1 D2 N-Channel MOSFET P-Channel MOSFET Bottom View ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and Halogen-free SQJ500EP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL P-CHANNEL Drain-Source Voltage VDS 40 - 40 Gate-Source Voltage VGS Continuous Drain Currenta TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID ± 20 8 -8 8 -8 IS 8 -8 IDM 32 - 32 IAS 30 - 30 EAS 45 45 PD 48 48 16 16 TJ, Tstg - 55 to + 175 Soldering Recommendations (Peak Temperature)e, f UNIT V A mJ W °C 260 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient PCB Mountc SYMBOL N-CHANNEL P-CHANNEL RthJA 85 85 UNIT °C/W Junction-to-Case (Drain) RthJC 3.1 3.1 Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S12-1845-Rev. C, 30-Jul-12 Document Number: 67517 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ500EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS(th) VGS = 0 V, ID = 250 μA N-Ch 40 - - VGS = 0 V, ID = - 250 μA P-Ch - 40 - - VDS = VGS, ID = 250 μA N-Ch 1.3 1.8 2.3 VDS = VGS, ID = - 250 μA IGSS VDS = 0 V, VGS = ± 20 V VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductanceb IDSS ID(on) RDS(on) VDS = 40 V P-Ch - 1.5 -2 - 2.5 N-Ch - - ± 100 P-Ch - - ± 100 N-Ch - - 1 -1 VGS = 0 V VDS = - 40 V P-Ch - - VGS = 0 V VDS = 40 V, TJ = 125 °C N-Ch - - 50 VGS = 0 V VDS = - 40 V, TJ = 125 °C P-Ch - - - 50 VGS = 0 V VDS = 40 V, TJ = 175 °C N-Ch - - 150 VGS = 0 V VDS = - 40 V, TJ = 175 °C P-Ch - - - 150 VGS = 10 V VDS 5 V N-Ch 25 - - VGS = - 10 V VDS 5 V P-Ch - 25 - - VGS = 10 V ID = 8 A N-Ch - 0.011 0.014 VGS = - 10 V ID = - 8 A P-Ch - 0.022 0.028 VGS = 10 V ID = 8 A, TJ = 125 °C N-Ch - - 0.017 VGS = - 10 V ID = - 8 A, TJ = 125 °C P-Ch - - 0.041 VGS = 10 V ID = 8 A, TJ = 175 °C N-Ch - - 0.025 VGS = - 10 V ID = - 8 A, TJ = 175 °C P-Ch - - 0.049 VGS = 4.5 V ID = 6 A N-Ch - 0.012 0.015 VGS = - 4.5 V ID = - 6 A P-Ch - 0.033 0.042 VDS = 15 V, ID = 8 A N-Ch - 40 - VDS = - 15 V, ID = - 8 A P-Ch - 18 - gfs V nA μA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg VGS = 0 V VDS = 20 V, f = 1 MHz N-Ch - 1799 2248 VGS = 0 V VDS = - 20 V, f = 1 MHz P-Ch - 1756 2195 VGS = 0 V VDS = 20 V, f = 1 MHz N-Ch - 282 352 VGS = 0 V VDS = - 20 V, f = 1 MHz P-Ch - 296 370 VGS = 0 V VDS = 20 V, f = 1 MHz N-Ch - 109 136 VGS = 0 V VDS = - 20 V, f = 1 MHz P-Ch - 208 260 VGS = 10 V VDS = 20 V, ID = 10 A N-Ch - 31.5 48 VGS = - 10 V VDS = - 20 V, ID = - 10 A P-Ch - 41.5 63 VGS = 10 V VDS = 20 V, ID = 10 A N-Ch - 5.7 - VGS = - 10 V VDS = - 20 V, ID = - 10 A P-Ch - 5.5 - VGS = 10 V VDS = 20 V, ID = 10 A N-Ch - 4.8 - VGS = - 10 V VDS = - 20 V, ID = - 10 A P-Ch - 10.5 - N-Ch 2 4.11 6.2 P-Ch 3.1 6.3 9.5 f = 1 MHz pF nC Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. S12-1845-Rev. C, 30-Jul-12 Document Number: 67517 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ500EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec SYMBOL td(on) tr td(off) tf TEST CONDITIONS MIN. TYP. MAX. VDD = 20 V, RL = 2 ID 10 A, VGEN = 10 V, Rg = 1 N-Ch - 7 11 VDD = - 20 V, RL = 2 ID - 10 A, VGEN = - 10 V, Rg = 1 P-Ch - 11 17 VDD = 20 V, RL = 2 ID 10 A, VGEN = 10 V, Rg = 1 N-Ch - 21 32 VDD = - 20 V, RL = 2 ID - 10 A, VGEN = - 10 V, Rg = 1 P-Ch - 9 14 VDD = 20 V, RL = 2 ID 10 A, VGEN = 10 V, Rg = 1 N-Ch - 33 50 VDD = - 20 V, RL = 2 ID - 10 A, VGEN = - 10 V, Rg = 1 P-Ch - 55 83 VDD = 20 V, RL = 2 ID 10 A, VGEN = 10 V, Rg = 1 N-Ch - 19 29 VDD = - 20 V, RL = 2 ID - 10 A, VGEN = - 10 V, Rg = 1 P-Ch - 91 137 N-Ch - - 32 P-Ch - - - 32 IS = 4 A N-Ch - 0.79 1.2 IS = - 4 A P-Ch - - 0.82 - 1.2 UNIT ns Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM Forward Voltage VSD A V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S12-1845-Rev. C, 30-Jul-12 Document Number: 67517 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ500EP www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 40 40 VGS = 10 V thru 4 V 32 ID - Drain Current (A) ID - Drain Current (A) 32 24 16 8 24 TC = 25 °C 16 8 TC = 125 °C VGS = 3 V 0 TC = - 55 °C 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 0 10 2 4 6 Output Characteristics 10 Transfer Characteristics 2.0 80 TC = - 55 °C TC = 25 °C gfs - Transconductance (S) 1.6 ID - Drain Current (A) 8 VGS - Gate-to-Source Voltage (V) 1.2 0.8 TC = 25 °C 0.4 64 TC = 125 °C 48 32 16 TC = 125 °C TC = - 55 °C 0.0 1 2 3 4 0 5 0 5 10 15 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Transconductance 0.025 2500 0.020 2000 20 25 32 40 Ciss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0 0.015 VGS = 4.5 V 0.010 VGS = 10 V 1500 1000 500 0.005 Coss Crss 0 0.000 0 8 16 24 32 ID - Drain Current (A) On-Resistance vs. Drain Current S12-1845-Rev. C, 30-Jul-12 40 0 8 16 24 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 67517 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ500EP www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.0 10 ID = 8 A RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 10 A 8 VDS = 20 V 6 4 2 1.4 VGS = 4.5 V 1.1 0.8 0.5 - 50 - 25 0 0 8 16 24 32 40 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 10 0.08 RDS(on) - On-Resistance (Ω) 0.10 TJ = 150 °C IS - Source Current (A) 0 Qg - Total Gate Charge (nC) 100 1 0.1 TJ = 25 °C 0.01 0.001 0.0 VGS = 10 V 1.7 0.06 0.04 TJ = 150 °C 0.02 TJ = 25 °C 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 51 0.5 VGS(th) Variance (V) - 0.3 ID = 5 mA - 0.7 ID = 250 μA - 1.1 - 1.5 - 50 - 25 0 25 50 75 100 125 150 175 VDS - Drain-to-Source Voltage (V) ID = 1 mA 0.1 49 47 45 43 41 39 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) TJ - Junction Temperature (°C) Threshold Voltage Drain Source Breakdown vs. Junction Temperature S12-1845-Rev. C, 30-Jul-12 Document Number: 67517 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ500EP www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 IDM Limited ID - Drain Current (A) 10 1 ms ID Limited 1 10 ms 100 ms, 1 s, 10 s, DC Limited by RDS(on)* 0.1 TC = 25 °C Single Pulse 0.01 0.01 BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient S12-1845-Rev. C, 30-Jul-12 Document Number: 67517 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ500EP www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. S12-1845-Rev. C, 30-Jul-12 Document Number: 67517 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ500EP www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 40 40 VGS = 10 V thru 5 V 32 ID - Drain Current (A) ID - Drain Current (A) 32 24 VGS = 4 V 16 24 16 TC = 25 °C 8 8 TC = 125 °C VGS = 3 V TC = - 55 °C 0 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 0 10 2 4 6 8 VGS - Gate-to-Source Voltage (V) Output Characteristics 10 Transfer Characteristics 2.0 30 TC = - 55 °C TC = 25 °C 24 gfs - Transconductance (S) ID - Drain Current (A) 1.6 1.2 0.8 TC = 25 °C 0.4 12 6 TC = 125 °C TC = - 55 °C 0.0 0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) 0 10 15 ID - Drain Current (A) Transfer Characteristics Transconductance 0.10 3000 0.08 2400 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) TC = 125 °C 18 0.06 VGS = 4.5 V 0.04 VGS = 10 V 5 20 25 32 40 Ciss 1800 1200 600 0.02 Coss Crss 0 0.00 0 10 20 30 ID - Drain Current (A) 40 On-Resistance vs. Drain Current S12-1845-Rev. C, 30-Jul-12 50 0 8 16 24 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 67517 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ500EP www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.0 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 ID = 10 A 8 6 VDS = 20 V 4 2 20 30 40 50 VGS = 4.5 V 1.1 0.8 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 100 0.15 10 0.12 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 VGS = 10 V 1.4 0.5 - 50 - 25 0 0 ID = 8 A 1.7 TJ = 150 °C 1 0.1 TJ = 25 °C 0.01 0.09 0.06 TJ = 150 °C 0.03 TJ = 25 °C 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage - 41 1.0 VDS - Drain-to-Source Voltage (V) ID = 250 μA VGS(th) Variance (V) 0.7 0.4 ID = 5 mA 0.1 - 0.2 - 0.5 - 50 - 25 10 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage S12-1845-Rev. C, 30-Jul-12 125 150 175 ID = 1 mA - 43 - 45 - 47 - 49 - 51 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 67517 9 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ500EP www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 IDM Limited ID - Drain Current (A) 10 Limited by RDS(on)* 1 ms ID Limited 1 0.1 0.01 0.01 TC = 25 °C Single Pulse 10 ms 100 ms, 1 s, 10 s, DC BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient S12-1845-Rev. C, 30-Jul-12 Document Number: 67517 10 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ500EP www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67517. S12-1845-Rev. C, 30-Jul-12 Document Number: 67517 11 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000