SQJ500EP Datasheet

SQJ500EP
www.vishay.com
Vishay Siliconix
Automotive N- and P-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
N-CHANNEL
VDS (V)
P-CHANNEL
40
- 40
RDS(on) () at VGS = ± 10 V
0.014
0.028
RDS(on) () at VGS = ± 4.5 V
0.015
0.042
8
-8
ID (A)
Configuration
N- and P-Pair
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
PowerPAK® SO-8L Dual
m
5m
6.1
D1
S2
5.1
3m
m
G2
D
2
G1
D
1
4
G2
S2
3
2
G1
1
S1
S1
D2
N-Channel MOSFET
P-Channel MOSFET
Bottom View
ORDERING INFORMATION
Package
PowerPAK SO-8L
Lead (Pb)-free and Halogen-free
SQJ500EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
N-CHANNEL
P-CHANNEL
Drain-Source Voltage
VDS
40
- 40
Gate-Source Voltage
VGS
Continuous Drain Currenta
TC = 25 °C
TC = 125 °C
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
± 20
8
-8
8
-8
IS
8
-8
IDM
32
- 32
IAS
30
- 30
EAS
45
45
PD
48
48
16
16
TJ, Tstg
- 55 to + 175
Soldering Recommendations (Peak Temperature)e, f
UNIT
V
A
mJ
W
°C
260
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
PCB Mountc
SYMBOL
N-CHANNEL
P-CHANNEL
RthJA
85
85
UNIT
°C/W
Junction-to-Case (Drain)
RthJC
3.1
3.1
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a
result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S12-1845-Rev. C, 30-Jul-12
Document Number: 67517
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ500EP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS(th)
VGS = 0 V, ID = 250 μA
N-Ch
40
-
-
VGS = 0 V, ID = - 250 μA
P-Ch
- 40
-
-
VDS = VGS, ID = 250 μA
N-Ch
1.3
1.8
2.3
VDS = VGS, ID = - 250 μA
IGSS
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductanceb
IDSS
ID(on)
RDS(on)
VDS = 40 V
P-Ch
- 1.5
-2
- 2.5
N-Ch
-
-
± 100
P-Ch
-
-
± 100
N-Ch
-
-
1
-1
VGS = 0 V
VDS = - 40 V
P-Ch
-
-
VGS = 0 V
VDS = 40 V, TJ = 125 °C
N-Ch
-
-
50
VGS = 0 V
VDS = - 40 V, TJ = 125 °C
P-Ch
-
-
- 50
VGS = 0 V
VDS = 40 V, TJ = 175 °C
N-Ch
-
-
150
VGS = 0 V
VDS = - 40 V, TJ = 175 °C
P-Ch
-
-
- 150
VGS = 10 V
VDS 5 V
N-Ch
25
-
-
VGS = - 10 V
VDS 5 V
P-Ch
- 25
-
-
VGS = 10 V
ID = 8 A
N-Ch
-
0.011
0.014
VGS = - 10 V
ID = - 8 A
P-Ch
-
0.022
0.028
VGS = 10 V
ID = 8 A, TJ = 125 °C
N-Ch
-
-
0.017
VGS = - 10 V
ID = - 8 A, TJ = 125 °C
P-Ch
-
-
0.041
VGS = 10 V
ID = 8 A, TJ = 175 °C
N-Ch
-
-
0.025
VGS = - 10 V
ID = - 8 A, TJ = 175 °C
P-Ch
-
-
0.049
VGS = 4.5 V
ID = 6 A
N-Ch
-
0.012
0.015
VGS = - 4.5 V
ID = - 6 A
P-Ch
-
0.033
0.042
VDS = 15 V, ID = 8 A
N-Ch
-
40
-
VDS = - 15 V, ID = - 8 A
P-Ch
-
18
-
gfs
V
nA
μA
A

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
VGS = 0 V
VDS = 20 V, f = 1 MHz
N-Ch
-
1799
2248
VGS = 0 V
VDS = - 20 V, f = 1 MHz
P-Ch
-
1756
2195
VGS = 0 V
VDS = 20 V, f = 1 MHz
N-Ch
-
282
352
VGS = 0 V
VDS = - 20 V, f = 1 MHz
P-Ch
-
296
370
VGS = 0 V
VDS = 20 V, f = 1 MHz
N-Ch
-
109
136
VGS = 0 V
VDS = - 20 V, f = 1 MHz
P-Ch
-
208
260
VGS = 10 V
VDS = 20 V, ID = 10 A
N-Ch
-
31.5
48
VGS = - 10 V
VDS = - 20 V, ID = - 10 A
P-Ch
-
41.5
63
VGS = 10 V
VDS = 20 V, ID = 10 A
N-Ch
-
5.7
-
VGS = - 10 V
VDS = - 20 V, ID = - 10 A
P-Ch
-
5.5
-
VGS = 10 V
VDS = 20 V, ID = 10 A
N-Ch
-
4.8
-
VGS = - 10 V
VDS = - 20 V, ID = - 10 A
P-Ch
-
10.5
-
N-Ch
2
4.11
6.2
P-Ch
3.1
6.3
9.5
f = 1 MHz
pF
nC

Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
S12-1845-Rev. C, 30-Jul-12
Document Number: 67517
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ500EP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
Turn-On Delay Timec
Rise
Timec
Turn-Off Delay Timec
Fall
Timec
SYMBOL
td(on)
tr
td(off)
tf
TEST CONDITIONS
MIN.
TYP.
MAX.
VDD = 20 V, RL = 2 
ID  10 A, VGEN = 10 V, Rg = 1 
N-Ch
-
7
11
VDD = - 20 V, RL = 2 
ID  - 10 A, VGEN = - 10 V, Rg = 1 
P-Ch
-
11
17
VDD = 20 V, RL = 2 
ID  10 A, VGEN = 10 V, Rg = 1 
N-Ch
-
21
32
VDD = - 20 V, RL = 2 
ID  - 10 A, VGEN = - 10 V, Rg = 1 
P-Ch
-
9
14
VDD = 20 V, RL = 2 
ID  10 A, VGEN = 10 V, Rg = 1 
N-Ch
-
33
50
VDD = - 20 V, RL = 2 
ID  - 10 A, VGEN = - 10 V, Rg = 1 
P-Ch
-
55
83
VDD = 20 V, RL = 2 
ID  10 A, VGEN = 10 V, Rg = 1 
N-Ch
-
19
29
VDD = - 20 V, RL = 2 
ID  - 10 A, VGEN = - 10 V, Rg = 1 
P-Ch
-
91
137
N-Ch
-
-
32
P-Ch
-
-
- 32
IS = 4 A
N-Ch
-
0.79
1.2
IS = - 4 A
P-Ch
-
- 0.82
- 1.2
UNIT
ns
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
A
V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.




Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

S12-1845-Rev. C, 30-Jul-12
Document Number: 67517
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ500EP
www.vishay.com
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
40
40
VGS = 10 V thru 4 V
32
ID - Drain Current (A)
ID - Drain Current (A)
32
24
16
8
24
TC = 25 °C
16
8
TC = 125 °C
VGS = 3 V
0
TC = - 55 °C
0
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
0
10
2
4
6
Output Characteristics
10
Transfer Characteristics
2.0
80
TC = - 55 °C
TC = 25 °C
gfs - Transconductance (S)
1.6
ID - Drain Current (A)
8
VGS - Gate-to-Source Voltage (V)
1.2
0.8
TC = 25 °C
0.4
64
TC = 125 °C
48
32
16
TC = 125 °C
TC = - 55 °C
0.0
1
2
3
4
0
5
0
5
10
15
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
Transconductance
0.025
2500
0.020
2000
20
25
32
40
Ciss
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0
0.015
VGS = 4.5 V
0.010
VGS = 10 V
1500
1000
500
0.005
Coss
Crss
0
0.000
0
8
16
24
32
ID - Drain Current (A)
On-Resistance vs. Drain Current
S12-1845-Rev. C, 30-Jul-12
40
0
8
16
24
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 67517
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ500EP
www.vishay.com
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.0
10
ID = 8 A
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 10 A
8
VDS = 20 V
6
4
2
1.4
VGS = 4.5 V
1.1
0.8
0.5
- 50 - 25
0
0
8
16
24
32
40
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
10
0.08
RDS(on) - On-Resistance (Ω)
0.10
TJ = 150 °C
IS - Source Current (A)
0
Qg - Total Gate Charge (nC)
100
1
0.1
TJ = 25 °C
0.01
0.001
0.0
VGS = 10 V
1.7
0.06
0.04
TJ = 150 °C
0.02
TJ = 25 °C
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
51
0.5
VGS(th) Variance (V)
- 0.3
ID = 5 mA
- 0.7
ID = 250 μA
- 1.1
- 1.5
- 50 - 25
0
25
50
75
100
125
150
175
VDS - Drain-to-Source Voltage (V)
ID = 1 mA
0.1
49
47
45
43
41
39
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Temperature (°C)
TJ - Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
S12-1845-Rev. C, 30-Jul-12
Document Number: 67517
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ500EP
www.vishay.com
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
IDM Limited
ID - Drain Current (A)
10
1 ms
ID Limited
1
10 ms
100 ms, 1 s, 10 s, DC
Limited by RDS(on)*
0.1
TC = 25 °C
Single Pulse
0.01
0.01
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
S12-1845-Rev. C, 30-Jul-12
Document Number: 67517
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ500EP
www.vishay.com
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
S12-1845-Rev. C, 30-Jul-12
Document Number: 67517
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ500EP
www.vishay.com
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
40
40
VGS = 10 V thru 5 V
32
ID - Drain Current (A)
ID - Drain Current (A)
32
24
VGS = 4 V
16
24
16
TC = 25 °C
8
8
TC = 125 °C
VGS = 3 V
TC = - 55 °C
0
0
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
0
10
2
4
6
8
VGS - Gate-to-Source Voltage (V)
Output Characteristics
10
Transfer Characteristics
2.0
30
TC = - 55 °C
TC = 25 °C
24
gfs - Transconductance (S)
ID - Drain Current (A)
1.6
1.2
0.8
TC = 25 °C
0.4
12
6
TC = 125 °C
TC = - 55 °C
0.0
0
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
0
10
15
ID - Drain Current (A)
Transfer Characteristics
Transconductance
0.10
3000
0.08
2400
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
TC = 125 °C
18
0.06
VGS = 4.5 V
0.04
VGS = 10 V
5
20
25
32
40
Ciss
1800
1200
600
0.02
Coss
Crss
0
0.00
0
10
20
30
ID - Drain Current (A)
40
On-Resistance vs. Drain Current
S12-1845-Rev. C, 30-Jul-12
50
0
8
16
24
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 67517
8
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ500EP
www.vishay.com
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.0
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
10
ID = 10 A
8
6
VDS = 20 V
4
2
20
30
40
50
VGS = 4.5 V
1.1
0.8
0
25
50
75
100
125
150
175
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
100
0.15
10
0.12
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
10
VGS = 10 V
1.4
0.5
- 50 - 25
0
0
ID = 8 A
1.7
TJ = 150 °C
1
0.1
TJ = 25 °C
0.01
0.09
0.06
TJ = 150 °C
0.03
TJ = 25 °C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
- 41
1.0
VDS - Drain-to-Source Voltage (V)
ID = 250 μA
VGS(th) Variance (V)
0.7
0.4
ID = 5 mA
0.1
- 0.2
- 0.5
- 50 - 25
10
0
25
50
75
100
TJ - Temperature (°C)
Threshold Voltage
S12-1845-Rev. C, 30-Jul-12
125
150
175
ID = 1 mA
- 43
- 45
- 47
- 49
- 51
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
Document Number: 67517
9
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ500EP
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Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
IDM Limited
ID - Drain Current (A)
10
Limited by RDS(on)*
1 ms
ID Limited
1
0.1
0.01
0.01
TC = 25 °C
Single Pulse
10 ms
100 ms, 1 s, 10 s, DC
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
S12-1845-Rev. C, 30-Jul-12
Document Number: 67517
10
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ500EP
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Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
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Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67517.
S12-1845-Rev. C, 30-Jul-12
Document Number: 67517
11
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000