SQP120N10-3m8 Datasheet

SQP120N10-3m8
www.vishay.com
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® Power MOSFET
100
RDS(on) () at VGS = 10 V
• Package with Low Thermal Resistance
0.0038
ID (A)
• AEC-Q101 Qualifiedd
120
Configuration
• 100 % Rg and UIS Tested
Single
TO-220
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
D
G
Top View
S
G D S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220
Lead (Pb)-free and Halogen-free
SQP120N10-3m8-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °Ca
TC = 125 °C
Continuous Source Current (Diode Conduction)a
Pulsed Drain
Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
V
120
102
IS
120
IDM
480
IAS
73
EAS
266
PD
UNIT
250
83
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
RthJA
40
RthJC
0.6
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mountc
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
S13-1433-Rev. A, 01-Jul-13
Document Number: 63403
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQP120N10-3m8
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
VDS
VGS = 0, ID = 250 μA
100
-
-
VGS(th)
VDS = VGS, ID = 250 μA
2.5
3.0
3.5
VDS = 0 V, VGS = ± 20 V
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductanceb
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 100 V
-
-
1
VGS = 0 V
VDS = 100 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 100 V, TJ = 175 °C
-
-
500
VGS = 10 V
VDS5 V
120
-
-
VGS = 10 V
ID = 20 A
-
0.0030
0.0038
VGS = 10 V
ID = 20 A, TJ = 125 °C
-
-
0.0064
VGS = 10 V
ID = 20 A, TJ = 175 °C
-
-
0.0080
-
82
-
VDS = 15 V, ID = 20 A
V
nA
μA
A

S
Dynamicb
-
5780
7230
-
3070
3840
Crss
-
305
385
Qg
-
125
190
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source
Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Qgs
VGS = 0 V
VGS = 10 V
VDS = 25 V, f = 1 MHz
VDS = 50 V, ID = 70 A
Qgd
Rg
f = 1 MHz
td(on)
tr
td(off)
VDD = 50 V, RL = 0.7 
ID  70 A, VGEN = 10 V, Rg = 1 
tf
-
28
-
-
46
-
1.6
3.3
5
-
16
25
pF
nC

-
110
165
-
40
60
-
12
20
-
-
480
A
-
0.9
1.5
V
ns
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = 100 A, VGS = 0
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-1433-Rev. A, 01-Jul-13
Document Number: 63403
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQP120N10-3m8
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
150
VGS = 10 V thru 7 V
200
120
ID - Drain Current (A)
ID - Drain Current (A)
VGS = 6 V
150
100
50
90
TC = 25°C
60
TC = 125°C
30
TC = - 55°C
VGS = 5 V
0
0
0
2
4
6
8
0
10
2
4
6
8
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
10
0.010
200
TC = - 55 °C
0.008
TC = 25 °C
RDS(on) - On-Resistance (Ω)
gfs - Transconductance (S)
160
120
TC = 125 °C
80
0.006
0.004
VGS = 10 V
0.002
40
0.000
0
0
14
28
42
56
0
70
20
ID - Drain Current (A)
40
60
80
100
120
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
10
10000
ID = 70 A
VDS = 50 V
8
VGS - Gate-to-Source Voltage (V)
C - Capacitance (pF)
8000
Ciss
6000
4000
Coss
2000
6
4
2
Crss
0
0
0
20
40
60
80
VDS - Drain-to-Source Voltage (V)
Capacitance
S13-1433-Rev. A, 01-Jul-13
100
0
30
60
90
120
150
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 63403
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQP120N10-3m8
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
ID = 20 A
1.8
10
IS - Source Current (A)
RDS(on) - On-Resistance (Normalized)
2.1
VGS = 10 V
1.5
1.2
0.9
1
0.1
TJ = 25 °C
0.01
0.001
0.6
- 50 - 25
0
25
50
75
100
125
150
0.0
175
0.2
0.4
0.6
0.8
1.0
1.2
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
0.020
0.6
0.016
0.1
VGS(th) Variance (V)
RDS(on) - On-Resistance (Ω)
TJ = 150 °C
0.012
0.008
TJ = 150 °C
- 0.4
ID = 5 mA
- 0.9
- 1.4
0.004
ID = 250 μA
TJ = 25 °C
- 1.9
0.000
0
2
4
6
8
- 50 - 25
10
0
25
50
75
100
VGS - Gate-to-Source Voltage (V)
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
125
150
175
VDS - Drain-to-Source Voltage (V)
125
120
ID = 10 mA
115
110
105
100
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S13-1433-Rev. A, 01-Jul-13
Document Number: 63403
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQP120N10-3m8
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
ID - Drain Current (A)
100
IDM Limited
100 μs
1 ms
10
1
0.1
0.01
0.01
ID Limited
10 ms
100 ms, 1 s, 10 s, DC
Limited by RDS(on)*
BVDSS Limited
TC = 25 °C
Single Pulse
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S13-1433-Rev. A, 01-Jul-13
Document Number: 63403
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQP120N10-3m8
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 5
10- 4
10- 3
10- 2
Square Wave Pulse Duration (s)
10- 1
1
3
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63403.
S13-1433-Rev. A, 01-Jul-13
Document Number: 63403
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ordering Information
www.vishay.com
Vishay Siliconix
TO-220
Ordering codes for the SQ rugged series power MOSFETs in the TO-220 package:
DATASHEET PART NUMBER
OLD ORDERING CODE a
NEW ORDERING CODE
SQP100N04-3m6
-
SQP100N04-3M6_GE3
SQP100P06-9m3L
-
SQP100P06-9M3L_GE3
SQP120N06-06
-
SQP120N06-06_GE3
SQP120N06-3m5L
SQP120N06-3M5L-GE3
SQP120N06-3M5L_GE3
SQP120N10-09
SQP120N10-09-GE3
SQP120N10-09_GE3
SQP120N10-3m8
SQP120N10-3M8-GE3
SQP120N10-3M8_GE3
SQP25N15-52
-
SQP25N15-52_GE3
SQP50N06-09L
SQP50N06-09L-GE3
SQP50N06-09L_GE3
SQP50P03-07
SQP50P03-07-GE3
SQP50P03-07_GE3
SQP60N06-15
SQP60N06-15-GE3
SQP60N06-15_GE3
SQP90P06-07L
SQP90P06-07L-GE3
SQP90P06-07L_GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
Revision: 12-Nov-15
Document Number: 67167
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-220AB
MILLIMETERS
A
E
F
D
H(1)
Q
ØP
3
2
L(1)
1
M*
L
b(1)
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
b
0.69
1.01
0.027
0.040
b(1)
1.20
1.73
0.047
0.068
c
0.36
0.61
0.014
0.024
D
14.85
15.49
0.585
0.610
D2
12.19
12.70
0.480
0.500
E
10.04
10.51
0.395
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.09
6.48
0.240
0.255
0.115
J(1)
2.41
2.92
0.095
L
13.35
14.02
0.526
0.552
L(1)
3.32
3.82
0.131
0.150
ØP
3.54
3.94
0.139
0.155
Q
2.60
3.00
0.102
0.118
ECN: T14-0413-Rev. P, 16-Jun-14
DWG: 5471
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
D2
Document Number: 71195
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 16-Jun-14
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all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000