SQP50N06-09L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® Power MOSFET 60 RDS(on) () at VGS = 10 V 0.009 RDS(on) () at VGS = 4.5 V 0.013 ID (A) • 100 % Rg and UIS Tested • AEC-Q101 Qualifiedd • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 50 Configuration Single D TO-220 G Top View S N-Channel MOSFET G D S ORDERING INFORMATION Package TO-220 Lead (Pb)-free and Halogen-free SQP50N06-09L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 TC = 25 °Ca Continuous Drain Current Continuous Source Current (Diode TC = 125 °C Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V 50 49 IS 50 IDM 200 IAS 48 EAS 115 PD UNIT 136 45 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc RthJA 50 RthJC 1.1 °C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. S12-1867-Rev. A, 13-Aug-12 Document Number: 62664 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP50N06-09L www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VGS = 0 V, ID = 250 μA 60 - - VDS = VGS, ID = 250 μA 1.5 2.0 2.5 VDS = 0 V, VGS = ± 20 V IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductanceb VDS VGS(th) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 60 V - - 1 VGS = 0 V VDS = 60 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 60 V, TJ = 175 °C - - 250 VGS = 10 V VDS5 V 50 - - VGS = 10 V ID = 20 A - 0.0071 0.0090 VGS = 10 V ID = 20 A, TJ = 125 °C - - 0.0160 VGS = 10 V ID = 20 A, TJ = 175 °C - - 0.0190 VGS = 4.5 V ID = 10 A - 0.0094 0.0130 - 62 - VDS = 15 V, ID = 20 A V nA μA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and VGS = 0 V VDS = 25 V, f = 1 MHz td(off) 2451 3065 435 545 - 192 240 pF - 48 72 - 7.1 - - 13.5 - f = 1 MHz 0.85 1.7 2.6 - 10 15 VDD = 30 V, RL = 0.6 ID 50 A, VGEN = 10 V, Rg = 1 - 11 17 - 27 41 - 8 12 - - 200 A - 0.82 1.5 V VGS = 10 V VDS = 30 V, ID = 50 A td(on) tr - tf nC ns Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 20 A, VGS = 0 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S12-1867-Rev. A, 13-Aug-12 Document Number: 62664 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP50N06-09L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 100 V GS = 10 V thru 5 V 80 ID - Drain Current (A) ID - Drain Current (A) 80 V GS = 4 V 60 40 60 40 T C = 25 °C 20 20 V GS = 3 V T C = 125 °C V GS = 2 V 0 T C = - 55 °C 0 0 4 8 12 16 VDS - Drain-to-Source Voltage (V) 20 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 10 120 100 6 g fs - Transconductance (S) ID - Drain Current (A) 8 T C = 25 °C 4 2 T C = - 55 °C 0 0 1 T C = - 55 °C 80 T C = 25 °C 60 40 T C = 125 °C 20 T C = 125 °C 2 3 4 VGS - Gate-to-Source Voltage (V) 0 0 5 10 Transfer Characteristics 20 30 ID - Drain Current (A) 40 50 Transconductance 4000 0.025 0.020 3000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 10 0.015 V GS = 4.5 V 0.010 V GS = 10 V Ciss 2000 1000 Coss 0.005 0 Crss 0 0 20 40 60 ID - Drain Current (A) 80 On-Resistance vs. Drain Current S12-1867-Rev. A, 13-Aug-12 100 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) 60 Capacitance Document Number: 62664 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP50N06-09L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10 2.5 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 50 A 8 V DS = 30 V 6 4 2 0 0 10 20 30 40 ID = 20 A 2.1 V GS = 10 V 1.7 V GS = 4.5 V 1.3 0.9 0.5 - 50 50 - 25 Qg - Total Gate Charge (nC) 150 175 On-Resistance vs. Junction Temperature Gate Charge 100 0.05 10 0.04 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0 25 50 75 100 125 TJ - Junction Temperature (°C) T J = 150 °C 1 T J = 25 °C 0.1 0.01 0.03 0.02 T J = 125 °C T J = 25 °C 0.01 0.001 0 0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Gate-to-Source Voltage Source Drain Diode Forward Voltage 75 0.5 VDS - Drain-to-Source Voltage (V) ID = 10 mA VGS(th) Variance (V) 0.1 - 0.3 ID = 5 mA - 0.7 ID = 250 μA - 1.1 - 1.5 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage S12-1867-Rev. A, 13-Aug-12 125 150 175 72 69 66 63 60 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 62664 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP50N06-09L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 IDM Limited I D - Drain Current (A) 100 100 µs Limited by RDS(on)* ID Limited 10 1 ms 10 ms 100 ms, 1 s, 10 s, DC 1 0.1 TC = 25 °C Single Pulse 0.01 0.01 * VGS BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which R DS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S12-1867-Rev. A, 13-Aug-12 Document Number: 62664 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP50N06-09L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62664. S12-1867-Rev. A, 13-Aug-12 Document Number: 62664 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ordering Information www.vishay.com Vishay Siliconix TO-220 Ordering codes for the SQ rugged series power MOSFETs in the TO-220 package: DATASHEET PART NUMBER OLD ORDERING CODE a NEW ORDERING CODE SQP100N04-3m6 - SQP100N04-3M6_GE3 SQP100P06-9m3L - SQP100P06-9M3L_GE3 SQP120N06-06 - SQP120N06-06_GE3 SQP120N06-3m5L SQP120N06-3M5L-GE3 SQP120N06-3M5L_GE3 SQP120N10-09 SQP120N10-09-GE3 SQP120N10-09_GE3 SQP120N10-3m8 SQP120N10-3M8-GE3 SQP120N10-3M8_GE3 SQP25N15-52 - SQP25N15-52_GE3 SQP50N06-09L SQP50N06-09L-GE3 SQP50N06-09L_GE3 SQP50P03-07 SQP50P03-07-GE3 SQP50P03-07_GE3 SQP60N06-15 SQP60N06-15-GE3 SQP60N06-15_GE3 SQP90P06-07L SQP90P06-07L-GE3 SQP90P06-07L_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 12-Nov-15 Document Number: 67167 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) D2 Document Number: 71195 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 16-Jun-14 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000