VISHAY SQJ431EP

SQJ431EP
www.vishay.com
Vishay Siliconix
Automotive P-Channel 200 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested
- 200
RDS(on) () at VGS = - 10 V
0.213
RDS(on) () at VGS = - 6 V
0.221
ID (A)
- 12
Configuration
Single
m
5m
6.1
• Compliant to RoHS Directive 2002/95/EC
S
PowerPAK® SO-8L Single
5.1
3m
m
G
D
4
G
S
3
S
D
2
S
1
P-Channel MOSFET
ORDERING INFORMATION
Package
PowerPAK SO-8L
Lead (Pb)-free and Halogen-free
SQJ431EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
- 200
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °C
ID
TC = 125 °C
Continuous Source Current (Diode Conduction)a
Pulsed Drain
IS
Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
Operating Junction and Storage Temperature Range
-7
- 30
- 40
IAS
- 40
EAS
80
TJ, Tstg
Soldering Recommendations (Peak Temperature)e, f
V
- 12
IDM
PD
TC = 125 °C
UNIT
83
27
- 55 to + 175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
PCB Mountc
Junction-to-Case (Drain)
SYMBOL
LIMIT
RthJA
65
RthJC
1.8
UNIT
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
e. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a
result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S11-1361-Rev. B, 18-Jul-11
1
Document Number: 67033
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ431EP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
VDS
VGS = 0, ID = - 250 μA
- 200
-
-
VGS(th)
VDS = VGS, ID = - 250 μA
- 2.5
- 3.0
- 3.5
VDS = 0 V, VGS = ± 20 V
-
-
± 100
-
-
-1
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward
Transconductanceb
RDS(on)
gfs
VGS = 0 V
VDS = - 200 V
VGS = 0 V
VDS = - 200 V, TJ = 125 °C
-
-
- 50
VGS = 0 V
VDS = - 200 V, TJ = 175 °C
-
-
- 150
VGS = - 10 V
VDS- 5 V
- 16
-
-
VGS = - 10 V
ID = - 3.8 A
-
0.178
0.213
VGS = - 10 V
ID = - 3.8 A, TJ = 125 °C
-
-
0.409
VGS = - 10 V
ID = - 3.8 A, TJ = 175 °C
-
-
0.527
VGS = - 6 V
ID = - 3.8 A
-
0.182
0.221
-
16
-
-
3483
4355
-
193
245
-
125
160
VDS = - 15 V, ID = - 3.8 A
V
nA
μA
A

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Source-Drain Diode Ratings and
VGS = 0 V
VDS = - 25 V, f = 1 MHz
VGS = - 10 V
VDS = - 100 V, ID = - 5.2 A
f = 1 MHz
Rg
td(on)
tr
td(off)
VDD = - 100 V, RL = 20.8 
ID  - 4.8 A, VGEN = - 10 V, Rg = 1.0 
tf
-
71
106
-
13.8
-
-
21.6
-
1.2
2.4
3.6
-
15
23
-
11
17
-
44
66
-
10
15
pF
nC

ns
Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = - 5 A, VGS = 0
-
-
- 40
A
-
- 0.8
- 1.2
V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-1361-Rev. B, 18-Jul-11
2
Document Number: 67033
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ431EP
www.vishay.com
Vishay Siliconix
40
30
32
24
VGS = 10 V thru 5 V
ID - Drain Current (A)
ID - Drain Current (A)
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
24
16
18
TC = 25 °C
12
6
8
VGS = 4 V
TC = 125 °C
TC = - 55 °C
0
0
0
3
6
9
12
15
VDS - Drain-to-Source Voltage (V)
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
10
50
2.0
TC = - 55 °C
40
gfs - Transconductance (S)
ID - Drain Current (A)
1.6
1.2
TC = 25 °C
0.8
0.4
TC = 125 °C
0.0
0
TC = - 55 °C
1
2
3
4
VGS - Gate-to-Source Voltage (V)
TC = 25 °C
30
TC = 125 °C
20
10
0
0
5
4
16
20
20
40
60
80
VDS - Drain-to-Source Voltage (V)
100
Transconductance
Transfer Characteristics
0.5
5000
0.4
4000
Ciss
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
8
12
ID - Drain Current (A)
0.3
VGS = 6 V
0.2
VGS = 10 V
3000
2000
1000
0.1
Coss
Crss
0
0.0
0
8
16
24
ID - Drain Current (A)
32
0
40
Capacitance
On-Resistance vs. Drain Current
S11-1361-Rev. B, 18-Jul-11
3
Document Number: 67033
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ431EP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.5
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
10
ID = 5.2 A
VDS = 100 V
8
6
4
2
20
40
60
Qg - Total Gate Charge (nC)
VGS = 10 V
1.7
VGS = 6 V
1.3
0.9
0.5
- 50 - 25
0
0
ID = 3.8 A
2.1
80
Gate Charge
0.8
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
175
1.0
10
TJ = 150 °C
1
0.1
TJ = 25 °C
0.01
0.6
TJ = 150 °C
0.4
TJ = 25 °C
0.2
0.0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
0
1.2
Source Drain Diode Forward Voltage
10
VDS - Drain-to-Source Voltage (V)
- 200
1.1
ID = 250 μA
0.7
ID = 5 mA
0.3
- 0.1
- 0.5
- 50 - 25
2
4
6
8
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
1.5
VGS(th) Variance (V)
150
On-Resistance vs. Junction Temperature
100
0.001
0.0
0
25
50
75 100 125
TJ - Junction Temperature (°C)
0
25
50
75 100
TJ - Temperature (°C)
125
150
ID = 10 mA
- 210
- 215
- 220
- 225
- 230
- 50 - 25
175
Threshold Voltage
S11-1361-Rev. B, 18-Jul-11
- 205
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
175
Drain Source Breakdown vs. Junction Temperature
4
Document Number: 67033
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ431EP
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TC = 25 °C, unless otherwise noted)
100
IDM Limited
100 μs
ID - Drain Current (A)
10
1 ms
10 ms
1
Limited by RDS(on)*
0.1
0.01
0.01
100 ms, 1 s, 10 s, DC
BVDSS Limited
TC = 25 °C
Single Pulse
0.1
1
10
100
1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 65 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10-2
4. Surface Mounted
10-1
1
10
Square Wave Pulse Duration (s)
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
S11-1361-Rev. B, 18-Jul-11
5
Document Number: 67033
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ431EP
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TC = 25 °C, unless otherwise noted)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67033.
S11-1361-Rev. B, 18-Jul-11
6
Document Number: 67033
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L Case Outline
Revision: 27-Aug-12
Document Number: 69003
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
MILLIMETERS
DIM.
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
1.00
1.07
1.14
0.039
0.042
0.045
A1
0.00
-
0.127
0.00
-
0.005
b
0.33
0.41
0.48
0.013
0.016
0.019
b1
0.44
0.51
0.58
0.017
0.020
0.023
b2
4.80
4.90
5.00
0.189
0.193
0.197
b3
0.094
0.004
b4
0.47
0.019
c
0.20
0.25
0.30
0.008
0.010
0.012
D
5.00
5.13
5.25
0.197
0.202
0.207
D1
4.80
4.90
5.00
0.189
0.193
0.197
D2
3.86
3.96
4.06
0.152
0.156
0.160
D3
1.63
1.73
1.83
0.064
0.068
0.072
e
1.27 BSC
0.050 BSC
E
6.05
6.15
6.25
0.238
0.242
0.246
E1
4.27
4.37
4.47
0.168
0.172
0.176
E2 (for Al product)
2.75
2.85
2.95
0.108
0.112
0.116
E2 (for other product)
3.18
3.28
3.38
0.125
0.129
0.133
0.006
F
-
-
0.15
-
-
L
0.62
0.72
0.82
0.024
0.028
0.032
L1
0.92
1.07
1.22
0.036
0.042
0.048
K
0.51
W
0.23
0.009
W1
0.41
0.016
W2
2.82
0.111
W3
2.96

0°
-
0.020
0.117
10°
0°
-
10°
ECN: C12-0026-Rev. B, 27-Aug-12
DWG: 5976
Note
• Millimeters will gover
Revision: 27-Aug-12
Document Number: 69003
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Revision: 12-Mar-12
1
Document Number: 91000