SQJ431EP www.vishay.com Vishay Siliconix Automotive P-Channel 200 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested - 200 RDS(on) () at VGS = - 10 V 0.213 RDS(on) () at VGS = - 6 V 0.221 ID (A) - 12 Configuration Single m 5m 6.1 • Compliant to RoHS Directive 2002/95/EC S PowerPAK® SO-8L Single 5.1 3m m G D 4 G S 3 S D 2 S 1 P-Channel MOSFET ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and Halogen-free SQJ431EP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS - 200 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C ID TC = 125 °C Continuous Source Current (Diode Conduction)a Pulsed Drain IS Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C Operating Junction and Storage Temperature Range -7 - 30 - 40 IAS - 40 EAS 80 TJ, Tstg Soldering Recommendations (Peak Temperature)e, f V - 12 IDM PD TC = 125 °C UNIT 83 27 - 55 to + 175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient PCB Mountc Junction-to-Case (Drain) SYMBOL LIMIT RthJA 65 RthJC 1.8 UNIT °C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. e. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S11-1361-Rev. B, 18-Jul-11 1 Document Number: 67033 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ431EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0, ID = - 250 μA - 200 - - VGS(th) VDS = VGS, ID = - 250 μA - 2.5 - 3.0 - 3.5 VDS = 0 V, VGS = ± 20 V - - ± 100 - - -1 UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductanceb RDS(on) gfs VGS = 0 V VDS = - 200 V VGS = 0 V VDS = - 200 V, TJ = 125 °C - - - 50 VGS = 0 V VDS = - 200 V, TJ = 175 °C - - - 150 VGS = - 10 V VDS- 5 V - 16 - - VGS = - 10 V ID = - 3.8 A - 0.178 0.213 VGS = - 10 V ID = - 3.8 A, TJ = 125 °C - - 0.409 VGS = - 10 V ID = - 3.8 A, TJ = 175 °C - - 0.527 VGS = - 6 V ID = - 3.8 A - 0.182 0.221 - 16 - - 3483 4355 - 193 245 - 125 160 VDS = - 15 V, ID = - 3.8 A V nA μA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and VGS = 0 V VDS = - 25 V, f = 1 MHz VGS = - 10 V VDS = - 100 V, ID = - 5.2 A f = 1 MHz Rg td(on) tr td(off) VDD = - 100 V, RL = 20.8 ID - 4.8 A, VGEN = - 10 V, Rg = 1.0 tf - 71 106 - 13.8 - - 21.6 - 1.2 2.4 3.6 - 15 23 - 11 17 - 44 66 - 10 15 pF nC ns Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = - 5 A, VGS = 0 - - - 40 A - - 0.8 - 1.2 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-1361-Rev. B, 18-Jul-11 2 Document Number: 67033 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ431EP www.vishay.com Vishay Siliconix 40 30 32 24 VGS = 10 V thru 5 V ID - Drain Current (A) ID - Drain Current (A) TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 24 16 18 TC = 25 °C 12 6 8 VGS = 4 V TC = 125 °C TC = - 55 °C 0 0 0 3 6 9 12 15 VDS - Drain-to-Source Voltage (V) 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 10 50 2.0 TC = - 55 °C 40 gfs - Transconductance (S) ID - Drain Current (A) 1.6 1.2 TC = 25 °C 0.8 0.4 TC = 125 °C 0.0 0 TC = - 55 °C 1 2 3 4 VGS - Gate-to-Source Voltage (V) TC = 25 °C 30 TC = 125 °C 20 10 0 0 5 4 16 20 20 40 60 80 VDS - Drain-to-Source Voltage (V) 100 Transconductance Transfer Characteristics 0.5 5000 0.4 4000 Ciss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 8 12 ID - Drain Current (A) 0.3 VGS = 6 V 0.2 VGS = 10 V 3000 2000 1000 0.1 Coss Crss 0 0.0 0 8 16 24 ID - Drain Current (A) 32 0 40 Capacitance On-Resistance vs. Drain Current S11-1361-Rev. B, 18-Jul-11 3 Document Number: 67033 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ431EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.5 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 ID = 5.2 A VDS = 100 V 8 6 4 2 20 40 60 Qg - Total Gate Charge (nC) VGS = 10 V 1.7 VGS = 6 V 1.3 0.9 0.5 - 50 - 25 0 0 ID = 3.8 A 2.1 80 Gate Charge 0.8 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 175 1.0 10 TJ = 150 °C 1 0.1 TJ = 25 °C 0.01 0.6 TJ = 150 °C 0.4 TJ = 25 °C 0.2 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 0 1.2 Source Drain Diode Forward Voltage 10 VDS - Drain-to-Source Voltage (V) - 200 1.1 ID = 250 μA 0.7 ID = 5 mA 0.3 - 0.1 - 0.5 - 50 - 25 2 4 6 8 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 1.5 VGS(th) Variance (V) 150 On-Resistance vs. Junction Temperature 100 0.001 0.0 0 25 50 75 100 125 TJ - Junction Temperature (°C) 0 25 50 75 100 TJ - Temperature (°C) 125 150 ID = 10 mA - 210 - 215 - 220 - 225 - 230 - 50 - 25 175 Threshold Voltage S11-1361-Rev. B, 18-Jul-11 - 205 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 Drain Source Breakdown vs. Junction Temperature 4 Document Number: 67033 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ431EP www.vishay.com Vishay Siliconix THERMAL RATINGS (TC = 25 °C, unless otherwise noted) 100 IDM Limited 100 μs ID - Drain Current (A) 10 1 ms 10 ms 1 Limited by RDS(on)* 0.1 0.01 0.01 100 ms, 1 s, 10 s, DC BVDSS Limited TC = 25 °C Single Pulse 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 65 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-2 4. Surface Mounted 10-1 1 10 Square Wave Pulse Duration (s) 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient S11-1361-Rev. B, 18-Jul-11 5 Document Number: 67033 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ431EP www.vishay.com Vishay Siliconix THERMAL RATINGS (TC = 25 °C, unless otherwise noted) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67033. S11-1361-Rev. B, 18-Jul-11 6 Document Number: 67033 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline Revision: 27-Aug-12 Document Number: 69003 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix MILLIMETERS DIM. INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 (for Al product) 2.75 2.85 2.95 0.108 0.112 0.116 E2 (for other product) 3.18 3.28 3.38 0.125 0.129 0.133 0.006 F - - 0.15 - - L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 2.96 0° - 0.020 0.117 10° 0° - 10° ECN: C12-0026-Rev. B, 27-Aug-12 DWG: 5976 Note • Millimeters will gover Revision: 27-Aug-12 Document Number: 69003 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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